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September 2002
STW9NC80Z
N-CHANNEL 800V - 0.82
- 9.4A TO-247
Zener-Protected PowerMESHTMIII MOSFET
(1)I
SD
9.4A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
n
TYPICAL R
DS
(on) = 0.82
n
EXTREMELY HIGH dv/dt CAPABILITY
n
GATE-TO-SOURCE ZENER DIODES
n
100% AVALANCHE TESTED
n
VERY LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
n
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW9NC80Z
800 V
<0.9
9.4 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
800
V
V
GS
Gate- source Voltage
25
V
I
D
Drain Current (continuous) at T
C
= 25C
9.4
A
I
D
Drain Current (continuous) at T
C
= 100C
5.9
A
I
DM
(1)
Drain Current (pulsed)
38
A
P
TOT
Total Dissipation at T
C
= 25C
190
W
Derating Factor
1.52
W/C
I
GS
Gate-source Current
50
mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
4
KV
dv/dt(
q
)
Peak Diode Recovery voltage slope
3
V/ns
V
ISO
Insulation Winthstand Voltage (DC)
--
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-247
STW9NC80Z
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.66
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
9.4
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
350
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
800
V
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
D
= 1 mA, V
GS
= 0
1
V/C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 4.7A
0.82
0.9
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
9.4
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=4.7A
13
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3500
pF
C
oss
Output Capacitance
230
pF
C
rss
Reverse Transfer
Capacitance
25
pF
3/8
STW9NC80Z
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
SWITCHING OFF (INDUCTIVE LOAD)
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
T (25-T) BV
GSO
(25)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 400V, I
D
= 4.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
35
ns
t
r
Rise Time
16
ns
Q
g
Total Gate Charge
V
DD
= 640V, I
D
= 9 A,
V
GS
= 10V
72.2
101
nC
Q
gs
Gate-Source Charge
19.5
nC
Q
gd
Gate-Drain Charge
24.3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 640V, I
D
= 9 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
32
ns
t
f
Fall Time
42
ns
t
c
Cross-over Time
67
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
9.4
A
I
SDM
(2)
Source-drain Current (pulsed)
38
A
V
SD
(1)
Forward On Voltage
I
SD
= 9 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 9 A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
730
ns
Q
rr
Reverse Recovery Charge
7.2
C
I
RRM
Reverse Recovery Current
19.5
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
25
V
T
Voltage Thermal Coefficient
T=25C Note(3)
1.3
10
-4
/C
Rz
Dynamic Resistance
I
GS
= 50 mA, V
GS
= 0
90
STW9NC80Z
4/8
Safe Operating Area For TO-247
Thermal Impedance For TO-247
Output Characteristics
Transfer Characteristics
Static Drain-source On Resistance
Transconductance
5/8
STW9NC80Z
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage
Capacitance Variations
Source-drain Diode Forward Characteristics
STW9NC80Z
6/8
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/8
STW9NC80Z
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
TO-247 MECHANICAL DATA
STW9NC80Z
8/8
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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