STX112
SILICON NPN POWER
DARLINGTON TRANSISTOR
s
MONOLITHIC DARLINGTON
CONFIGURATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The device is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in TO-92 plastic package. It is intented
for use in linear and switching applications.
Ordering codes:
STX112 (shipment in bulk)
STX112-AP (shipment in ammopack)
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ.= 7K
R
2
Typ.= 230
October 2000
TO-92
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
2
A
I
CM
Collector Peak Current
4
A
I
B
Base Current
50
mA
P
tot
Total Dissipation at T
a mb
= 25
o
C
1.2
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/5
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max
104
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 50 V
2
mA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 30 mA
100
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 8 mA
2.5
V
V
BE
Base-Emitter Voltage
I
C
= 2 A V
CE
= 4 V
2.8
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 4 V
I
C
= 2 A V
CE
= 4 V
1000
500
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
STX112
2/5
DC Current Gain
Base-Emitter Saturation Voltage
Freewheel Diode Forward Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
STX112
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.58
5.33
0.180
0.210
B
4.45
5.2
0.175
0.204
C
3.2
4.2
0.126
0.165
D
12.7 0.500
E
1.27
0.050
F
0.4
0.51
0.016
0.020
G
0.35
0.14
TO-92 MECHANICAL DATA
STX112
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STX112
5/5
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