1/8
November 2002
STX13005
STX13005-AP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
COMPACT FLUORESCENT LAMPS (CFLS)
s
SWITCH MODE POWER SUPPLIES (AC / DC
CONVERTERS)
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
ABSOLUTE MAXIMUM RATINGS
Ordering Code
Marking
Shipment
STX13005
STX13005-AP
X13005
X13005
Bulk
Ammopack
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
700
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage (I
C
= 0, I
B
< 1.5 A, t
p
< 10 ms)
V
(BR)EBO
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current (t
p
< 5 ms)
6
A
I
B
Base Current
1.5
A
I
BM
Base Peak Current (t
p
< 5 ms)
3
A
P
tot
Total Dissipation at T
c
= 25 C
2.8
W
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-92
INTERNAL SCHEMATIC DIAGRAM
STX13005 / STX13005-AP
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
j
= 25 C unless otherwise specified)
* Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %.
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
44.6
150
C/W
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 100 C
1
5
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 400 V
1
mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA
9
18
V
V
CEO(sus)
*
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
400
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 200 mA
I
B
= 500 mA
I
B
= 750 mA
0.5
0.6
5
V
V
V
V
BE(sat)
*
Base-Emitter
Saturation Voltage
I
C
= 1 A
I
C
= 2 A
I
B
= 200 mA
I
B
= 500 mA
1.2
1.6
V
V
h
FE
*
DC Current Gain
I
C
= 1 A
I
C
= 2 A
V
CE
= 5 V
V
CE
= 5 V
10
8
30
24
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A
I
B1
= -I
B2
= 400 mA
(See Figure 1)
V
CC
= 125 V
t
p
= 30 s
1.65
260
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 1 A
I
B1
= 200 mA
L = 50 mH
(See Figure 2)
V
clamp
= 300 V
V
BE(off)
= -5 V
R
BB
= 0
0.8
150
s
ns
3/8
STX13005 / STX13005-AP
Collector-Emitter Saturation Voltage
DC Current Gain
DC Current Gain
Output Characteristics
Safe Operating Area
Derating Curve
STX13005 / STX13005-AP
4/8
Inductive Load Fall Time
Reverse Biased Safe Operating Area
Inductive Load Storage Time
Base-Emitter Saturation Voltage
Resistive Load Fall Time
Resistive Load Storage Time
5/8
STX13005 / STX13005-AP
Figure 1: Resistive Load Switching Test Circuit
1) Fast Electronic Switch
2) Non-Inductive Resistor
Figure 2: Inductive Load Switching Test Circuit
1) Fast Electronic Switch
2) Non-Inductive Resistor
3) Fast Recovery Rectifier
PDF 
ZIP