STX83003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
ST83003 SILICON IN TO-92 PACKAGE
s
MEDIUM VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX93003, its
complementary PNP transistor.
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
700
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
= 0.5 A, t
p
< 10
s, T
j
< 150
o
C)
V
(BR)EBO
V
I
C
Collector Current
1
A
I
CM
Collector Peak Current (t
p
< 5 ms)
3
A
I
B
Base Current
0.5
A
I
BM
Base Peak Current (t
p
< 5 ms)
1.5
A
P
tot
Total Dissipation at T
C
= 25
o
C
1.5
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
TO-92
1/7
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
83.3
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 700V
V
CE
= 700V T
j
= 125
o
C
1
5
mA
mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA
12
18
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
L = 25 mH
400
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 0.35 A I
B
= 50 mA
0.5
1
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
1
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.35 A V
CE
= 5 V
I
C
= 1 A V
CE
= 5 V
10
16
4
25
32
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= 0.35 A V
CC
= 125 V
I
B1
= 70 mA I
B2
= -70 mA
T
p
25
s (see figure 2)
1.5
100
2.2
0.2
2.9
ns
s
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 0.5 A I
B1
= 0.1 A
V
BE(o ff)
= -5 V L = 10 mH
V
clamp
= 300 V (see figure 1)
450
90
ns
ns
Pulsed: Pulse duration = 300
s, duty cycle = 1.5 %.
STX83003
2/7
Safe Operating Area
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
STX83003
3/7
Resistive Load Fall Time
Resistive Load Storage Time
Inductive Load Fall Time
Inductive Load Storage Time
Reverse Biased SOA
STX83003
4/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
STX83003
5/7
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