STY25NA60
N - CHANNEL 600V - 0.225
- 25 A - Max247
EXSTREMELY LOW GATE CHARGE POWER MOSFET
s
TYPICAL R
DS(on)
= 0.225
s
EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
LOW INTRINSIC CAPACITANCE
s
GATE CHARGE MINIMIZED
s
REDUCED VOLTAGE SPREAD
DESCRIPTION
The Max247
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to acco-
modate much larger silicon chips, normally sup-
plied in bigger packages such as TO-264.The in-
creased die capacity makes the device idealto re-
duce component count in multiple paralleled de-
signs and save board space with respect to larger
packages.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
March 1999
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain- gat e Voltage (R
GS
= 20 k
)
600
V
V
GS
G ate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
25
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
16.5
A
I
DM
(
)
Drain Current (pulsed)
100
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
300
W
Derating F act or
2.4
W /
o
C
T
s tg
Storage Temperature
-55 to 150
o
C
T
j
Max. O perating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STY25NA60
600 V
< 0.24
25 A
1
2
3
Max247
TM
1/8
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-Heatsink
Typ
with Conduct ive Grease
0.42
40
0.05
o
C/W
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
I
AR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by T
j
max)
25
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
3000
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
600
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
50
500
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
G S(th)
Gat e Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source O n
Resist ance
V
GS
= 10 V
I
D
= 12.5 A
0. 225
0.24
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
25
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
g
f s
(
)
Forward
Transconduct ance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 12.5 A
20
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
6200
690
195
pF
pF
pF
STY25NA60
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
d(on)
t
r
Turn-on delay Time
Rise Time
V
DD
= 300 V
I
D
= 12. 5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
45
70
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 480 V I
D
= 25 A V
G S
= 10 V
240
25
115
315
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
I
D
= 25 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
70
25
105
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
25
100
A
A
V
SD
(
)
Forward On Volt age
I
SD
= 25 A
V
GS
= 0
2
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 25 A
di/ dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
840
19.5
46.5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STY25NA60
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STY25NA60
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STY25NA60
5/8
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