STY60NA20
N - CHANNEL 200V - 0.030
- 60 A - Max247
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.030
s
EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s
30V GATE TO SOURCE VOLTAGE RATING
s
REPETITIVE AVALANCHE TESTED
s
LOW INTRINSIC CAPACITANCE
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
T he Max247
TM
package is a new high volume
power package exibiting the same footprint as the
industr y st andard T O-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as T O-264. The
increased die capacit y makes t he device ideal to
reduce component count in mult iple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
I
D
STY60NA20
200 V
< 0. 032
60 A
August 1998
1
2
3
Max247
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
DS
Drain-source Volt age (V
GS
= 0)
200
V
V
DGR
Drain- gat e Volt age (R
GS
= 20 k
)
200
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
60
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
40
A
I
DM
(
)
Drain Current (pulsed)
240
A
P
t ot
Total Dissipation at T
c
= 25
o
C
300
W
Derat ing Factor
2.4
W/
o
C
T
stg
St orage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction T emperature
150
o
C
(
) Pulse width limited by safe operating area
1/4
THERMAL DATA
R
t hj-ca se
R
t hj- amb
R
thc- si nk
Thermal Resist ance Junction-case
Max
Thermal Resist ance Junction-ambient
Max
Thermal Resist ance Case-Heatsink
T yp
with Conductive Grease
0.42
40
0.05
o
C/ W
o
C/ W
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repetitive
(pulse width limited by T
j
max)
60
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
3000
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
G S
= 0
200
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 100
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
30 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate T hreshold Voltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
St atic Drain-source O n
Resistance
V
G S
= 10 V
I
D
= 30A
0. 03
0. 032
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
60
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on) max
I
D
= 30 A
20
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
6000
1400
500
8000
1900
700
pF
pF
pF
STY60NA20
2/4
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on T ime
Rise Time
V
DD
= 100 V
I
D
= 30 A
R
G
= 4.7
V
G S
= 10 V
40
50
55
70
ns
ns
Q
g
Q
gs
Q
gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160 V
I
D
= 60 A
V
GS
= 10 V
285
40
150
370
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over T ime
V
DD
= 160 V
I
D
= 60 A
R
G
= 4.7
V
G S
= 10 V
70
40
110
100
55
150
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
SD
(
)
Forward O n Volt age
I
SD
= 60 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A
di/dt = 100 A/
s
V
DD
= 50 V
T
j
= 150
o
C
480
7.5
30
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STY60NA20
3/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.70
5.30
A1
2.20
2.60
b
1.00
1.40
b1
2.00
2.40
b2
3.00
3.40
c
0.40
0.80
D
19.70
20.30
e
5.35
5.55
E
15.30
15.90
L
14.20
15.20
L1
3.70
4.30
P025Q
Max247 MECHANICAL DATA
STY60NA20
4/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics Printed in Italy All Rights Reserved
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STY60NA20
5/4
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