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July 2003
STY60NM60
N-CHANNEL 600V - 0.050
- 60A Max247
Zener-Protected MDmeshTMPower MOSFET
TYPICAL R
DS
(on) = 0.050
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL
INDUSTRY'S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
STY60NM60
600V
< 0.055
60 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STY60NM60
Y60NM60
Max247
TUBE
Max247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STY60NM60
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ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
(1) I
SD
60A, di/dt
400 A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
60
A
I
D
Drain Current (continuous) at T
C
= 100C
37.8
A
I
DM
( )
Drain Current (pulsed)
240
A
P
TOT
Total Dissipation at T
C
= 25C
560
W
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
6
KV
Derating Factor
4.5
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
Rthj-case
Thermal Resistance Junction-case
Max
0.22
C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
30
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 35 V)
1.4
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
30
V
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STY60NM60
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
10
A
V
DS
= Max Rating, T
C
= 125C
100
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 30 A
0.050
0.055
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= I
D(on)
x R
DS(on)max,
I
D
= 30 A
35
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
7300
2000
40
pF
pF
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 300 V, I
D
= 30 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
55
95
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 470 V, I
D
= 60 A,
V
GS
= 10 V
178
44.5
95
266
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V, I
D
= 60 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
130
76
105
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 60 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A, di/dt = 100 A/s,
V
DD
= 30 V, T
j
= 150C
(see test circuit, Figure 5)
600
14
48
ns
C
A
STY60NM60
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Safe Operating Area
Thermal Impedance
Transconductance
Transfer Characteristics
Output Characteristics
Static Drain-source On Resistance
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STY60NM60
Capacitance Variations
Gate Charge vs Gate-source Voltage
Normalized BVDSS vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp.
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