TDA8177F
VERTICAL DEFLECTION BOOSTER
December 1998
TDA8177F
POWER
AMPLIFIER
4
5
7
THERMAL
PROTECTION
1
2
3
6
INVERTING INPUT
NON-INVERTING INPUT
OUTPUT
GROUND
SUPPLY
VOLTAGE
OUTPUT
STAGE
SUPPLY
FLYBACK
SUPPLY
81
77
F
-
0
2
.
E
P
S
BLOCK DIAGRAM
7
6
5
4
3
2
1
Tab connected to Pin 4
OUTPUT STAGE SUPPLY
OUTPUT
GROUND
FLYBACK SUPPLY
SUPPLY VOLTAGE
INVERTING INPUT
NON-INVERTING INPUT
81
77
F
-
0
1
.
E
P
S
PIN CONNECTIONS
.
POWER AMPLIFIER
.
THERMAL PROTECTION
.
OUTPUT CURRENT UP TO 3.0A
PP
.
FLYBACK VOLTAGE UP TO 70V (on Pin 5)
.
SUITABLE FOR DC COUPLING APPLICATION
.
EXTERNAL FLYBACK SUPPLY
DESCRIPTION
Designed for monitors and high performance TVs,
the TDA8177F vertical deflection booster can han-
dle flyback voltage up to 70V. More than this it is
possible to have a flyback voltage which is more
than the double of the supply (Pin 2). This allows
to decrease the power consumption or to decrease
the flyback time for a given supply voltage.
The TDA8177F operates with supplies up to 35V and
provides up to 3A
PP
output current to drive the yoke.
The TDA8177F is offered in HEPTAWATT package.
HEPTAWATT
(Plastic Package)
ORDER CODE : TDA8177F
1/5
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
S
Supply Voltage (Pin 2) (see note 1)
40
V
V
6
Flyback Peak Voltage (Pin 6) (see note 1)
75
V
V
1
, V
7
Amplifier Input Voltage (Pins 1-7) (see note 1)
- 0.3, + V
S
V
I
O
Maximum Output Peak Current (see notes 2 and 3)
2.5
A
I
3
Maximum Sink Current (t < 1ms)
2.5
A
I
3
Maximum Source Current (t < 1ms) (in the diode, see Block Diagram)
2.5
A
V
ESD1
V
ESD2
ESD Susceptibility
Tool Model (see note 4)
Human Model (see note 5)
300
2
V
kV
V
3
- V
2
Voltage Difference between Flyback Supply and Supply Voltage
50
V
V
3
, V
5
, V
6
Min. Voltage (see note 1)
-0.4
V
T
oper
Operating Ambient Temperature
- 20, + 75
o
C
T
stg
Storage Temperature
- 40, + 150
o
C
T
j
Junction Temperature
+150
o
C
Notes : 1. Versus Pin 4.
2. The output current can reach 4A peak for t
10
s (up to 120Hz).
3. Provided SOAR is respected (see Figures 1 and 2).
4. Equivalent to discharging a 200pF capacitor through a 0
series resistor.
5. Equivalent to discharging a 150pF capacitor through a 1.5k
series resistor.
81
77
F
-
0
1
.
T
B
L
THERMAL DATA
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction-case Thermal Resistance
Max.
3
o
C/W
T
t
Temperature for Thermal Shutdown
150
o
C
T
t
Hysteresis on T
t
10
o
C
T
jr
Recommended Max. Junction Temperature
120
o
C
81
77
F
-
0
2
.
T
B
L
ELECTRICAL CHARACTERISTICS
(V
S
= 35V, T
A
= 25
o
C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
S
Operating Supply Voltage Range
10
35
V
V
3M
Operating Flyback Supply Voltage
V
S
70
V
I
2
Pin 2 Quiescent Current
I
3
= 0, I
5
= 0
10
20
mA
I
6
Pin 6 Quiescent Current
I
3
= 0, I
5
= 0
25
35
mA
I
O
Max. Scanning Peak Output Current
1.5
A
I
1
Amplifier Bias Current
V
1
= 20V, V
7
= 21V
- 0.4
- 2
A
I
7
Amplifier Bias Current
V
1
= 21V, V
7
= 20V
- 0.4
- 2
A
V
IO
Offset Voltage
0
7
mV
V
IO
/dt
Offset Drift versus Temperature
- 10
V/
o
C
GV
Voltage Gain
80
dB
V
5L
Output Saturation Voltage to GND (Pin 4)
I
5
= 1.5A
1.0
2
V
V
5H
Output Saturation Voltage to Supply (Pin 6)
I
5
= - 1.5A
1.7
2.5
V
V
D5 - 6
Diode Forward Voltage between Pins 5-6
I
5
= 1.5A
1.5
2.1
V
V
D3 - 6
Diode Forward Voltage between Pins 3-6
I
3
= 1.5A
2.3
3
V
V
3-6
Voltage Drop between Pins 3-6 (2nd part of flyback) I
3
= - 1.5A
4
5
V
81
77
F
-
0
3
.
T
B
L
TDA8177F
2/5
t = 1ms
t = 10ms
t = 100ms
10
1
10
-1
10
-2
I
C
(A)
1
10
10
2
V
CE
(V)
@ T
case
= 25C
81
77
F
-
0
5
.
E
P
S
Figure 1 : Output Transistors SOA
(for secondary breakdown)
100
90
80
70
60
ISB (%)
25
50
75
100
125
T
case
(C)
81
77
F
-
06
.
E
P
S
Figure 2 : Secondary Breakdown Temperature
Derating Curve
(ISB = secondary breakdown current)
TDA8177F
4/5
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics - All Rights Reserved
Purchase of I
2
C Components of STMicroelectronics, conveys a license under the Philips I
2
C Patent.
Rights to use these components in a I
2
C system, is granted provided that the system conforms to
the I
2
C Standard Specifications as defined by Philips.
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P
M
-
H
EPT
V.
E
P
S
PACKAGE MECHANICAL DATA : HEPTAWAT
Dimensions
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.8
0.189
C
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.6
08
0.024
0.031
F1
0.9
0.035
G
2.41
2.54
2.67
0.095
0.100
0.105
G1
4.91
5.08
5.21
0.193
0.200
0.205
G2
7.49
7.62
7.8
0.295
0.300
0.307
H2
10.4
0.409
H3
10.05
10.4
0.396
0.409
L
16.97
0.668
L1
14.92
0.587
L2
21.54
0.848
L3
22.62
0.891
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
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