TDE1897C
TDE1898C
0.5A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
PRELIMINARY DATA
0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO V
S
- 45V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COM-
MON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
DESCRIPTION
The TDE1897C/TDE1898C is a monolithic Intelli-
gent Power Switch in Multipower BCD Technol-
ogy, for driving inductive or resistive loads. An in-
ternal Clamping Diode enables the fast demag-
netization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher-
ently indistructible and suitable for general pur-
pose industrial applications.
October 1995
Minidip
SIP9
SO20
ORDERING NUMBERS:
TDE1897CDP
TDE1898CSP
TDE1897CFP
TDE1898CDP
TDE1898CFP
BLOCK DIAGRAM
MULTIPOWER BCD TECHNOLOGY
1/12
PIN CONNECTIONS (Top view)
ABSOLUTE MAXIMUM RATINGS (Minidip pin reference)
Symbol
Parameter
Value
Unit
V
S
Supply Voltage (Pins 3 - 1) (T
W
< 10ms)
50
V
V
S
V
O
Supply to Output Differential Voltage. See also V
Cl
3-2 (Pins 3 - 2)
internally limited
V
V
i
Input Voltage (Pins 7/8)
-10 to V
S
+10
V
V
i
Differential Input Voltage (Pins 7 - 8)
43
V
I
i
Input Current (Pins 7/8)
20
mA
I
O
Output Current (Pins 2 - 1). See also ISC
internally limited
A
E
l
Energy from Inductive Load (T
J
= 85
C)
200
mJ
P
tot
Power Dissipation. See also THERMAL CHARACTERISTICS.
internally limited
W
T
op
Operating Temperature Range (T
amb
)
-25 to +85
C
T
stg
Storage Temperature
-55 to 150
C
THERMAL DATA
Symbol
Description
Minidip
Sip
SO20
Unit
R
th j-case
Thermal Resistance Junction-case
Max.
10
C/W
R
th j-amb
Thermal Resistance Junction-ambient
Max.
100
70
90
C/W
Minidip
SIP9
SO20
TDE1897C - TDE1898C
2/12
ELECTRICAL CHARACTERISTICS (V
S
= 24V; T
amb
= 25 to +85
C, unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
smin
3
Supply Voltage for Valid
Diagnostics
I
diag
> 0.5mA @ V
dg1
= 1.5V
9
35
V
V
s
3
Supply Voltage (operative)
18
24
35
V
I
q
3
Quiescent Current
I
out
= I
os
= 0
V
il
V
ih
2.5
4.5
4
7.5
mA
mA
V
sth1
Undervoltage Threshold 1
(See fig. 1); T
amb
= 0 to +85
C
11
V
V
sth2
3
Undervoltage Threshold 2
(See fig. 1); Tamb = 0 to +85
C
15.5
V
V
shys
Supply Voltage Hysteresis
(See fig. 1); T
amb
= 0 to +85
C
0.4
1
3
V
I
sc
Short Circuit Current
V
S
= 18 to 35V; R
L
= 1
0.75
1.5
A
V
don
3-2
Output Voltage Drop
@ I
out
= 625mA; T
j
= 25
C
@ I
out
= 625mA; T
j
= 125
C
250
400
425
600
mV
mV
I
oslk
2
Output Leakage Current
@ V
i
= V
il
, V
o
= 0V
300
A
V
ol
2
Low State Out Voltage
@ V
i
= V
il
; R
L
=
0.8
1.5
V
V
cl
3-2
Internal Voltage Clamp (V
S
- V
O
)
@ I
O
= -500mA
45
55
V
I
old
2
Open Load Detection Current
V
i
= V
ih
; T
amb
= 0 to +85
C
1
6
mA
V
id
7-8
Common Mode Input Voltage
Range (Operative)
V
S
= 18 to 35V,
V
S
= V
id
7-8 < 37V
7
15
V
I
ib
7-8
Input Bias Current
V
i
= 7 to 15V; In = 0V
700
700
A
V
ith
7-8
Input Threshold Voltage
V+In > VIn
0.8
1.4
2
V
V
iths
7-8
Input Threshold Hysteresis
Voltage
V+In > VIn
50
400
mV
R
id
7-8
Diff. Input Resistance
@ 0 < +In < +16V; In = 0V
@ 7 < +In < 0V; In = 0V
400
150
K
K
I
ilk
7-8
Input Offset Current
V+In = VIn
+Ii
0V < V
i
<5.5V
Ii
20
75
25
+20
A
A
In = GND
+Ii
0V < V+In <5.5V
Ii
250
+10
125
+50
A
A
+In = GND
+Ii
0V < VIn <5.5V
Ii
100
50
30
15
A
A
V
oth1
2
Output Status Threshold 1
Voltage
(See fig. 1)
12
V
V
oth2
2
Output Status Threshold 2
Voltage
(See fig. 1)
9
V
V
ohys
2
Output Status Threshold
Hysteresis
(See fig. 1)
0.3
0.7
2
V
I
osd
4
Output Status Source Current
V
out
> V
oth1
, V
os
= 2.5V
2
4
mA
V
osd
3-4
Active Output Status Driver
Drop Voltage
V
s
V
os
@ I
os
= 2mA;
T
amb
= -25 to 85
C
5
V
I
oslk
4
Output Status Driver Leakage
Current
V
out
< V
oth2
, V
os
= 0V
V
S
= 18 to 35V
25
A
V
dgl
5/6
Diagnostic Drop Voltage
D1 / D2 = L @ I
diag
= 0.5mA
D1 / D2 = L @ I
diag
= 3mA
250
1.5
mV
V
I
dglk
5/6
Diagnostic Leakage Current
D1 / D2 =H @ 0 < V
dg
< V
s
V
S
= 15.6 to 35V
25
A
V
fdg
5/6-3
Clamping Diodes at the
Diagnostic Outputs.
Voltage Drop to V
S
@ I
diag
= 5mA; D1 / D2 = H
2
V
Note Vil < 0.8V, Vih > 2V @ (V+In > VIn);
Minidip pin reference.
All test not dissipative.
TDE1897C - TDE1898C
3/12
Figure 1
DIAGNOSTIC TRUTH TABLE
Diagnostic Conditions
Input
Output
Diag1
Diag2
Normal Operation
L
H
L
H
H
H
H
H
Open Load Condition (I
o
< I
old
)
L
H
L
H
H
L
H
H
Short to V
S
L
H
H
H
L
L
H
H
Short Circuit to Ground (I
O
= I
SC
)
(**)
TDE1897C
TDE1898C
H
<H (*)
H
L
H
H
L
H
H
H
H
Output DMOS Open
L
H
L
L
H
L
H
H
Overtemperature
L
H
L
L
H
H
L
L
Supply Undervoltage (V
S
< V
sth1
in the falling phase of the
supply voltage; V
S
< V
sth2
in the rising phase of the supply
voltage)
L
H
L
L
L
L
L
L
(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897
uses Diag2 to signal such condition, TDE1898 does not.
SOURCE DRAIN NDMOS DIODE
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
fsd
2-3
Forward On Voltage
@ I
fsd
= 625mA
1
1.5
V
I
fp
2-3
Forward Peak Current
t = 10ms; d = 20%
2
A
t
rr
2-3
Reverse Recovery Time
I
f
= 625mA di/dt = 25A/
s
200
ns
t
fr
2-3
Forward Recovery Time
50
ns
THERMAL CHARACTERISTICS (*)
Lim
Junction Temp. Protect.
135
150
C
T
H
Thermal Hysteresis
30
C
SWITCHING CHARACTERISTICS (V
S
= 24V; R
L
= 48
) (*)
t
on
Turn on Delay Time
100
s
t
off
Turn off Delay Time
20
s
t
d
Input Switching to Diagnostic
Valid
100
s
Note Vil < 0.8V, Vih > 2V @ (V+In > VIn); Minidip pin reference.
(*) Not tested.
TDE1897C - TDE1898C
4/12
APPLICATION INFORMATION
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(V
cl
), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
T
j
= 85
C).
To define the maximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2)
The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W
=
V
cl
L
R
L
I
o
V
cl
V
s
R
L
log
1
+
V
s
V
cl
V
s
Where:
V
cl
= clamp voltage;
L = inductive load;
R
L
= resistive load;
Vs = supply voltage;
I
O
= I
LOAD
3)
In normal conditions the operating Junction
temperature should remain below 125
C.
Figure 2: Inductive Load Equivalent Circuit
Figure 3: Demagnetization Cycle Waveforms
-25
0
25
50
75
100
125
Tj (
C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
D93IN018
=
RDSON (Tj)
RDSON (Tj=25
C)
Figure 4: Normalized R
DSON
vs. Junction
Temperature
TDE1897C - TDE1898C
5/12
WORST CONDITION POWER DISSIPATION IN
THE ON-STATE
In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered cur-
rent (and related power), thermal characteristics
of the package and ambient temperature.
At ambient temperature close to upper limit
(+85
C) and in the worst operating conditions, it is
possible that the chip temperature could increase
so much to make the thermal shutdown proce-
dure untimely intervene.
Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient tem-
perature. To this end, we should consider the fol-
lowing points:
1) The ON resistance R
DSON
of the output
NDMOS (the real switch) of the device in-
creases with its temperature.
Experimental results show that silicon resistiv-
ity increases with temperature at a constant
rate, rising of 60% from 25
C to 125
C.
The relationship between R
DSON
and tem-
perature is therefore:
R
DSON
=
R
DSON0
(
1
+
k
)
(
T
j
25
)
where:
T
j
is the silicon temperature in
C
R
DSON0
is R
DSON
at T
j
=25
C
k is the constant rate (k
=
4.711
10
3
)
(see fig. 4).
2)
In the ON state the power dissipated in the
device is due to three contributes:
a) power lost in the switch:
P
out
=
I
out
2
R
DSON
(I
out
is the output cur-
rent);
b) power due to quiescent current in the ON
state Iq, sunk by the device in addition to
I
out
: P
q
=
I
q
V
s
(V
s
is the supply voltage);
c) an external LED could be used to visualize
the switch state (OUTPUT STATUS pin).
Such a LED is driven by an internal current
source (delivering I
os
) and therefore, if V
os
is
the voltage drop across the LED, the dissi-
pated power is: P
os
=
I
os
(
V
s
V
os
)
.
Thus the total ON state power consumption is
given by:
P
on
=
P
out
+
P
q
+
P
os
(1)
In the right side of equation 1, the second and
the third element are constant, while the first
one increases with temperature because
R
DSON
increases as well.
3) The chip temperature must not exceed
Lim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system device-
board-ambient (R
th
). In steady state condi-
tions, this parameter relates the power dissi-
pated P
on
to the silicon temperature T
j
and
the ambient temperature T
amb
:
T
j
T
amb
=
P
on
R
th
(2)
From this relationship, the maximum power
P
on
which can be dissipated without exceed-
ing
Lim at a given ambient temperature
T
amb
is:
P
on
=
Lim
T
amb
R
th
Replacing the expression (1) in this equation
and solving for I
out
, we can find the maximum
current versus ambient temperature relation-
ship:
I
outx
=
Lim
T
amb
R
th
P
q
P
os
R
DSONx
where R
DSON
x is R
DSON
at T
j
=
Lim. Of
course, I
outx
values are top limited by the
maximum operative current I
outx
(500mA
nominal).
From the expression (2) we can also find the
maximum ambient temperature T
amb
at which
a given power P
on
can be dissipated:
T
amb
=
Lim
P
on
R th
=
=
Lim
(
I
out
2
R
DSONx
+
P
q
+
P
os
)
R
th
In particular, this relation is useful to find the
maximum
ambient temperature T
ambx
at
which I
outx
can be delivered:
T
ambx
=
Lim
(
I
outx
2
R
DSONx
+
+
P
q
+
P
os
)
R
th
(4)
Referring to application circuit in fig. 5, let us con-
sider the worst case:
- The supply voltage is at maximum value of in-
dustrial bus (30V instead of the 24V nominal
value). This means also that I
outx
rises of 25%
TDE1897C - TDE1898C
6/12
(625mA instead of 500mA).
- All electrical parameters of the device, con-
cerning the calculation, are at maximum val-
ues.
- Thermal shutdown threshold is at minimum
value.
- No heat sink nor air circulation (R
th
equal to
R
thj-amb
).
Therefore:
V
s
= 30V, R
DSON0
= 0.6
, I
q
= 6mA, I
os
= 4mA @
V
os
= 2.5V,
Lim = 135
C
R
thj-amb
= 100
C/W (Minidip); 90
C/W (SO20);
70
C/W (SIP9)
It follows:
I
outx
= 0.625mA, R
DSONx
= 1.006
, P
q
= 180mW,
P
os
= 110mW
From equation 4, we can find:
T
ambx
= 66.7
C (Minidip);
73.5
C (SO20);
87.2
C (SIP9).
Therefore, the IPS TDE1897/1898, although
guaranteed to operate up to 85
C ambient tem-
perature, if used in the worst conditions, can meet
some limitations.
SIP9 package, which has the lowest R
thj-amb
, can
work at maximum operative current over the en-
tire ambient temperature range in the worst condi-
tions too. For other packages, it is necessary to
consider some reductions.
With the aid of equation 3, we can draw a derat-
ing curve giving the maximum current allowable
versus ambient temperature. The diagrams, com-
puted using parameter values above given, are
depicted in figg. 6 to 8.
If an increase of the operating area is needed,
heat dissipation must be improved (R
th
reduced)
e.g. by means of air cooling.
+
-
+IN
-IN
D1
D2
CONTROL
LOGIC
Ios
LOAD
OUTPUT
OUTPUT STATUS
GND
P POLLING
+Vs
DC BUS 24V +/-25%
D93IN014
Figure 5: Application Circuit.
TDE1897C - TDE1898C
7/12
0
20
40
60
80
100
(
C)
0
100
200
300
400
500
600
(mA)
D93IN015
Figure 6: Max. Output Current vs. Ambient
Temperature (Minidip Package,
R
th j-amb
= 100
C/W)
0
20
40
60
80
100
(
C)
0
100
200
300
400
500
600
(mA)
D93IN016
Figure 7: Max. Output Current vs. Ambient
Temperature (SO20 Package,
R
th j-amb
= 90
C/W)
0
20
40
60
80
100
(
C)
0
100
200
300
400
500
600
(mA)
D93IN017
Figure 8: Max. Output Current vs. Ambient
Temperature (SIP9 Package,
R
th j-amb
= 70
C/W)
TDE1897C - TDE1898C
8/12
MINIDIP PACKAGE MECHANICAL DATA
DIM
mm
inch
Min.
Typ.
Max.
Min.
Typ.
Max.
A
3.32
0.131
a1
0.51
0.020
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
D
10.92
0.430
E
7.95
9.75
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0260
i
5.08
0.200
L
3.18
3.81
0.125
0.150
Z
1.52
0.060
TDE1897C - TDE1898C
9/12
D
N
M
L1
1
9
d1
L3
L2
La
1
e3
b3
b1
B
e
c1
A
c2
C
P
L4
SIP9
B3
SIP9 PACKAGE MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.1
0.280
a1
2.7
3
0.106
0.118
B
23
0.90
B3
24.8
0.976
b1
0.5
0.020
b3
0.85
1.6
0.033
0.063
C
3.3
0.130
c1
0.43
0.017
c2
1.32
0.052
D
21.2
0.835
d1
14.5
0.571
e
2.54
0.100
e3
20.32
0.800
L
3.1
0.122
L1
3
0.118
L2
17.6
0.693
L3
0.25
0.010
L4
17.4
17.85
0.685
0,702
M
3.2
0.126
N
1
0.039
P
0.15
0.006
TDE1897C - TDE1898C
10/12
SO20 PACKAGE MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.65
0.104
a1
0.1
0.2
0.004
0.008
a2
2.45
0.096
b
0.35
0.49
0.014
0.019
b1
0.23
0.32
0.009
0.013
C
0.5
0.020
c1
45
(typ.)
D
12.6
13.0
0.496
0.510
E
10
10.65
0.394
0.419
e
1.27
0.050
e3
11.43
0.450
F
7.4
7.6
0.291
0.300
L
0.5
1.27
0.020
0.050
M
0.75
0.030
S
8
(max.)
TDE1897C - TDE1898C
11/12
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-
THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics Printed in Italy All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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TDE1897C - TDE1898C
12/12
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