TIP102
TIP105 TIP107
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP102 is a silicon Epitaxial-Base NPN
power
transistor
in
monolithic
Darlington
configuration
mounted
in
TO-220
plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is TIP107.
Also TIP105 is a PNP type.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Un it
NPN
TIP102
PNP
TIP105
TIP107
V
CBO
Collector-Base Voltage (I
E
= 0)
60
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
15
A
I
B
Base Current
1
A
P
tot
T otal Dissipat ion at T
c ase
25
o
C
T
amb
25
o
C
80
2
W
W
T
s tg
Storage Temperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
* For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 5 K
R
2
Typ. = 150
1/4
THERMAL DATA
R
thj -case
R
thj -amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
1.56
62. 5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-of f
Current (I
B
= 0)
for TIP105
V
CE
= 30 V
for T IP102/ TIP107
V
CE
= 50 V
50
50
A
A
I
CBO
Collector Cut-of f
Current (I
E
= 0)
for TIP105
V
CB
= 60 V
for T IP102/ TIP107
V
CB
= 100 V
50
50
A
A
I
EBO
Emitter Cut-of f Current
(I
C
= 0)
V
EB
= 5 V
8
mA
V
CEO(sus )
* Collector-Emitt er
Sustaining Volt age
(I
B
= 0)
I
C
= 30 mA
for TIP105
for T IP102/ TIP107
60
100
V
V
V
CE(sat )
*
Collector-Emitt er
Sat uration Voltage
I
C
= 3 A
I
B
= 6 mA
I
C
= 8 A
I
B
= 80 mA
2
2. 5
V
V
V
BE
*
Base-Emitter Volt age
I
C
= 8 A
V
CE
= 4 V
2. 8
V
h
F E
*
DC Current G ain
I
C
= 3 A
V
CE
= 4 V
I
C
= 8 A
V
CE
= 4 V
1000
200
20000
V
F
*
Forward Voltage of
Commut ation Diode
(I
B
= 0)
I
F
= - I
C
= 10 A
2. 8
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
TIP102 / TIP105 / TIP107
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
TIP102 / TIP105 / TIP107
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics Printed in Italy All Rights Reserved
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