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Электронный компонент: TLC386S

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TLC116 ---> TLC386
T/D/S/A
February 1999
Ed: 1A
SENSITIVE GATE TRIACS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
conduction angle)
Tl = 40
C
3
A
Ta = 25
C
1.3
(1)
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 8.3 ms
31.5
A
tp = 10 ms
30
I2t
I2t value
tp = 10 ms
4.5
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 50mA diG/dt = 0.1A/
s
Repetitive
F = 50 Hz
10
A/
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 110
C
C
Tl
Maximum lead temperature for soldering during 4 s at 4.5 mm
from case
230
C
TL
(Plastic)
.
VERY LOW I
GT
= 5mA max
.
LOW I
H
= 15mA max
DESCRIPTION
Symbol
Parameter
TLC
Unit
116 T/D/S/A
226 T/D/S/A
336 T/D/S/A
386 T/D/S/A
VDRM
VRRM
Repetitive peak off-state
voltage
Tj = 110
C
200
400
600
700
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TLC116 ---> TLC386 T/D/S/A triac family
uses a high performance glass passivated PNPN
technology.
These parts are suitable for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
(1) With Cu surface 1cm
2
.
A
1
G
A
2
1/5
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient on printed circuit with Cu surface 1cm2
50
C/W
Rth (j-l) DC Junction leads for DC
20
C/W
Rth (j-l) AC
Junction leads for 360
conduction angle ( F= 50 Hz)
15
C/W
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
D
S
A
IGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III
MAX
5
5
10
10
mA
IV
MAX
5
10
10
25
VGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=110
C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 40mA
dIG/dt = 0.5A/
s
Tj=25
C
I-II-III-IV
TYP
2
s
IL
IG= 1.2 IGT
Tj=25
C
I-III-IV
MAX
15
15
25
25
mA
II
15
15
25
25
IH *
IT= 100mA gate open
Tj=25
C
MAX
15
15
25
25
mA
VTM *
ITM= 4A tp= 380
s
Tj=25
C
MAX
1.85
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.01
mA
Tj=110
C
MAX
0.75
dV/dt *
Linear
slope
up
to
VD=67%VDRM
gate open
Tj=110
C
TYP
10
10
20
20
V/
s
(dV/dt)c *
(dI/dt)c = 1.3A/ms
Tj=110
C
TYP
1
1
5
5
V/
s
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
PG (AV) = 0.1W
PGM = 2W (tp = 20
s)
IGM = 1A (tp = 20
s)
VGM = 16V (tp = 20
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TLC116 T/D/S/A ---> TLC386 T/D/S/A
2/5
Package
IT(RMS)
VDRM / VRRM
Sensitivity Specification
A
V
T
D
S
A
TLC ..6
3
200
X
X
X
X
400
X
X
X
X
600
X
X
X
X
700
X
X
X
X
ORDERING INFORMATION
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tlead).
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Thermal transient impedance junction to case
and junction to ambient versus pulse duration.
TLC116 T/D/S/A ---> TLC386 T/D/S/A
3/5
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
:
t
10ms,
and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
TLC116 T/D/S/A ---> TLC386 T/D/S/A
4/5
PACKAGE MECHANICAL DATA
TL
Plastic
Marking : type number
Weight : 0.75 g
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.55
10.05
0.375
0.396
B
7.55
8.05
0.297
0.317
C
12.70
0.500
D
4.25
4.75
0.167
0.187
E
1.25
1.75
0.049
0.069
F
6.75
7.25
0.266
0.285
G
4.50
0.177
H
2.04
3.04
0.80
0.120
I
0.75
0.85
0.029
0.033
D
E
F
A
B
C
G
H
H
I
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TLC116 T/D/S/A ---> TLC386 T/D/S/A
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