TMBYV 10-40
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
Metal to silicon rectifier diodes in glass case featur-
ing very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
MELF
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
40
V
I
F (AV)
Average Forward Current
T
i
= 60
C
1
A
I
FSM
Surge non Repetitive Forward Current
T
i
= 25
C
t
p
= 10ms
25
Sinusodal Pulse
A
T
i
= 25
C
t
p
= 300
s
50
Rectangular Pulse
T
stg
T
j
Storage and Junction Temperature
Range
- 65 to 150
- 65 to 125
C
C
T
L
Maximum Lead Temperature for Soldering during 15s
260
C
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
Parameter
Value
Unit
R
th (j - l)
Junction-leads
110
C/W
* Pulse test: t
p
300
s
<
2%.
THERMAL RESISTANCE
1/4
2/4
Synbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
0.5
mA
T
j
= 100
C
10
V
F
*
I
F
= 1A
T
j
= 25
C
0.55
V
I
F
= 3A
0.85
* * Pulse test: t
p
300
s
<
2%.
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
j
= 25
C V
R
= 0
220
pF
DYNAMIC CHARACTERISTICS
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Fig. 1 : Forward current versus forward voltage
at low level (typical values).
Fig. 2 : Forward current versus forward voltage
at high level (typical values).
TMBYV10-40
Fig. 3 : Reverse current versus junction
temperature.
Fig. 4 : Reverse current versus VRRM in per
cent.
Fig. 5 : Capacitance C versus reverse applied
voltage V
R
(typical values)
Fig. 6 : Surge non repetitive forward current for
a rectangular pulse with t 10 ms.
3/4
TMBYV10-40
4/4
Fig. 7 : Surge non repetitive forward current
versus number of cycles.
Cooling method: by convection and conduction
Marking: ring at cathode end.
Weight: 0.139g
ORDERING CODE : TMBYV10-40 FILM
FOOT PRINT DIMENSIONS (Millimeter)
PACKAGE MECHANICAL DATA
MELF Glass
B
O
/
A
C
C
D
O
/
4
6.5
3
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.80
5.20 0.189
0.205
B
2.50
2.65 0.098
0.104
C
0.45
0.60 0.018
0.024
D
2.50
0.098
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all information previously supplied.
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