TMBYV 10-60
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon rectifier diode in glass case featu-
ring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
August 1999 Ed: 1A
MELF
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
60
V
I
F (AV)
Average Forward Current
T
i
= 25
C
1
A
I
FSM
Surge non Repetitive Forward Current
T
i
= 25
C
t
p
= 10ms
20
Sinusoidal Pulse
A
T
i
= 25
C
t
p
= 300
s
40
Rectangular Pulse
T
stg
T
j
Storage and Junction Temperature Range
- 65 to + 150
- 65 to + 125
C
C
T
L
Maximum Lead Temperature for Soldering during 15s
260
C
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
Parameter
Value
Unit
R
th (j - l)
Junction-leads
110
C/W
THERMAL RESISTANCE
1/5
2/5
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
0.5
mA
T
j
= 100
C
10
V
F
*
I
F
= 1A
T
j
= 25
C
0.7
V
I
F
= 3A
1
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
j
= 25
C V
R
= 0
150
pF
T
j
= 25
C V
R
= 5V
40
DYNAMIC CHARACTERISTICS
* Pulse test: t
p
300
s
<
2%.
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
TMBYV 10-60
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
RRM
in per
cent.
3/5
TMBYV 10-60
4/5
Figure 5. Capacitance C versus reverse
applied voltage V
R
(typical values)
Figure 6. Surge non repetitive forward current
for a rectangular pulse with t
10 ms.
Figure 7. Surge non repetitive forward current
versus number of cycles.
TMBYV 10-60
Marking: ring at cathode end.
Weight: 0.15g
PACKAGE MECHANICAL DATA
4
6.5
3
FOOT PRINT DIMENSIONS (Millimeter)
MELF Glass
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.80
5.20
0.189
0.205
B
2.50
2.65
0.098
0.104
C
0.45
0.60
0.018
0.024
D
2.50
0.098
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
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TMBYV 10-60
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