ChipFind - документация

Электронный компонент: TMMBAT48

Скачать:  PDF   ZIP
TMMBAT 47
TMMBAT 48
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol
Parameter
TMMBAT47
TMMBAT48
Unit
V
RRM
Repetitive Peak Reverse Voltage
20
40
V
I
F
Forward Continuous Current
T
l
= 25
C
350
mA
I
FRM
Repetitive Peak Fordward Current
t
p
1s
0.5
1
A
I
FSM
Surge non Repetitive Forward Current
t
p
= 10ms
7.5
A
t
p
= 1s
1.5
P
tot
Power Dissipation
T
l
= 25
C
330
mW
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 150
- 65 to 125
C
C
T
L
Maximum Temperature for Soldering during 15s
260
C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-l)
Junction-leads
300
C/W
THERMAL RESISTANCE
1/5
* Pulse test: t
p
300
s
<
2%.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
T
j
= 25
C
I
R
= 10
A
TMMBAT47
20
V
T
j
= 25
C
I
R
= 25
A
TMMBAT48
40
V
F
*
T
j
= 25
C
I
F
= 0.1mA
All Types
0.25
V
T
j
= 25
C
I
F
= 1mA
0.3
T
j
= 25
C
I
F
= 10mA
0.4
T
j
= 25
C
I
F
= 30mA
TMMBAT47
0.5
T
j
= 25
C
I
F
= 150mA
0.8
T
j
= 25
C
I
F
= 300mA
1
T
j
= 25
C
I
F
= 50mA
TMMBAT48
0.5
T
j
= 25
C
I
F
= 200mA
0.75
T
j
= 25
C
I
F
= 500mA
0.9
I
R
*
T
j
= 25
C
V
R
= 1.5V
All Types
1
A
T
j
= 60
C
10
T
j
= 25
C
V
R
= 10V
TMMBAT47
4
T
j
= 60
C
20
T
j
= 25
C
V
R
= 20V
10
T
j
= 60
C
30
T
j
= 25
C
V
R
= 10V
TMMBAT48
2
T
j
= 60
C
15
T
j
= 25
C
V
R
= 20V
5
T
j
= 60
C
25
T
j
= 25
C
V
R
= 40V
25
T
j
= 60
C
50
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
j
= 25
C
V
R
= 0V
f = 1MHz
20
pF
T
j
= 25
C
V
R
= 1V
12
t
rr
T
j
= 25
C I
F
= 10mA V
R
= 1V i
rr
= 1mA R
L
= 100
10
ns
DYNAMIC CHARACTERISTICS
2/5
TMMBAT 47/TMMBAT 48
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typical values).
3/5
TMMBAT 47/TMMBAT 48
4/5
Figure 5. Capacitance C versus reverse
applied voltage V
R
(typical values).
TMMBAT 47/TMMBAT 48
5/5
Marking: ring at cathode end.
Weight: 0.05g
PACKAGE MECHANICAL DATA
FOOT PRINT DIMENSIONS (Millimeter)
MINIMELF Glass
B
A
C
C
O
/
2.5
5
2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
3.30
3.40
3.6
0.130
0.134
0.142
B
1.59
1.60
1.62
0.063
0.063
0.064
C
0.40
0.45
0.50
0.016
0.018
0.020
D
1.50
0.059
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5
TMMBAT 47/TMMBAT 48