TN805/TN815-B
August 1998 - Ed: 1A
SCR's
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
conduction angle)
Tc= 105
C
8
A
I
T(AV)
Mean on-state current
(180
conduction angle)
Tc= 105
C
5
A
I
TSM
Non repetitive surge peak on-state current
(Tj initial = 25C)
tp = 8.3 ms
73
A
tp = 10 ms
70
I
2
t
I
2
t Value for fusing
tp = 10ms
24.5
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 100 mA dI
G
/dt = 1 A/
s.
100
A/
s
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
Tl
Maximum lead temperature for soldering during 10s
260
C
ABSOLUTE MAXIMUM RATINGS
DPAK
I
TRMS
= 8 A
V
DRM
= 400 V to 800 V
I
GT
5 mA and 15 mA
FEATURES
The TN805/TN815-B serie of Silicon Controlled
Rectifiers uses a high performance TOPGLASS
PNPN technology.
These parts are intended for general purpose
applications using mount technology.
DESCRIPTION
K
A
A
G
Symbol
Parameter
TN805 or TN815
Unit
400B
600B
700B
800B
V
DRM
V
RRM
Repetitive peak-off voltage
Tj = 125C
400
600
700
800
V
1/5
P
G (AV)
= 1W P
GM
= 10 W (tp = 20
s) I
GM
= 4 A (tp = 20
s) V
RGM
= 5 V
GATE CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient (S=0.5cm
2
)
70
C/W
Rth(j-c)
Junction to case for D.C
2.5
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Type
Value
Unit
TN805
TN815
I
GT
V
D
= 12V (DC) R
L
= 33
Tj= 25
C
MAX
5
15
A
V
GT
V
D
= 12V (DC) R
L
= 33
Tj= 25C
MAX
1.5
V
V
GD
V
D
= V
DRM
R
L
= 3.3k
Tj= 125
C
MIN
0.2
V
tgt
V
D
= V
DRM
I
TM
= 3 x I
T(AV)
I
G
= 40mA dIG/dt = 0.5A/us
Tj= 25C
TYP
2
s
I
H
I
T
= 150mA Gate open
Tj= 25
C
MAX
25
30
mA
I
L
I
G
= 1.2 I
GT
Tj= 25
C
MAX
25
30
mA
V
TM
I
TM
= 16A tp= 380
s
Tj= 25
C
MAX
1.6
V
I
DRM
VDRM Rated
Tj= 25
C
MAX
10
A
I
RRM
VRRM Rated
Tj = 125C
MAX
2
mA
dV/dt
Linear slope up to
V
D
=67%V
DRM
Gate open
Tj= 125
C
MIN
50
150
V/
s
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
TN 8 05 - 600 B
SCR
CURRENT
PACKAGES :
B: DPAK
V
DRM
/ V
RRM
SENSITIVITY
TN805/TN815-B
2/5
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
2
4
6
8
10
Tcase(C)
IT(av)(A)
D.C.
= 180
Fig. 3-1: Average and D.C. on-state current versus
case temperature.
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
Fig. 4-1: Relative variation of thermal impedance
versus pulse duration.
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
IT(av)(A)
P(W)
D.C.
= 30
= 60
= 90
= 120
= 180
360
Fig. 1: Maximum average power dissipation ver-
sus average on-state current .
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
1
2
3
4
5
6
7
8
Tamb(C)
P(W)
Tcase (C)
Rth=0C/W
Rth=37C/W
125
110
105
115
120
= 180
Fig. 2 : Correlation between maximum average
power dissipation and maximum allowable tem-
peratures (T
amb
and T
case
) for different thermal
resistances heatsink+contact.
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tamb(C)
IT(av)(A)
D.C.
= 180
Fig. 3-2: Average and D.C. on-state current versus
case temperature.
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
tp(s)
K=[Zth(j-a)/Rth(j-a)]
Fig. 4-2: Relative variation of thermal impedance
versus pulse duration.
TN805/815-B
3/5
-40
-20
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj(C)
Igt,IH[Tj]/Ig,IH[Tj=25C]
Igt
IH
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature.
1
10
100
1000
0
10
20
30
40
50
60
70
80
Number of cycles
ITSM(A)
Tj initial=25C
F=50Hz
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
1
2
5
10
10
20
50
100
300
tp(ms)
ITSM(A),It(As)
Tj initial=25C
ITSM
It
Fig. 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 9: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35
m).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
100.0
VTM(V)
ITM(A)
Tj max.:
Vto=0.85V
Rt=46m
Tj=Tj max.
Tj=25C
Fig. 8: On-state characteristics (maximum values).
TN805/TN815-B
4/5
PACKAGE MECHANICAL DATA
DPAK
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max
Min.
Typ. Max.
A
2.20
2.40 0.086
0.094
A1
0.90
1.10 0.035
0.043
A2
0.03
0.23 0.001
0.009
B
0.64
0.90 0.025
0.035
B2
5.20
5.40 0.204
0.212
C
0.45
0.60 0.017
0.023
C2
0.48
0.60 0.018
0.023
D
6.00
6.20 0.236
0.244
E
6.40
6.60 0.251
0.259
G
4.40
4.60 0.173
0.181
H
9.35
10.10 0.368
0.397
L2
0.80
0.031
L4
0.60
1.00 0.023
0.039
V2
0
8
0
8
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6.7
6.7
6.7
3
1.6
1.6
2.3
2.3
FOOT PRINT DIMENSIONS (in millimeters)
WEIGHT : 0.30g
TYPE
MARKING
T805- x00B
TN8
05x0
T815-x00B
TN8
15x0
MARKING
TN805/815-B
5/5
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