TPDV 625 ---> 1225
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
conduction angle)
Tc = 85
C
25
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 2.5 ms
390
A
tp = 8.3 ms
250
tp = 10 ms
230
I2t
I2t value
tp = 10 ms
265
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/
s
Repetitive
F = 50 Hz
20
A/
s
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
C
TOP 3
(Plastic)
A1
A2
G
.
HIGH COMMUTATION : > 88 A/ms (400Hz)
.
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : EB81734)
.
HIGH VOLTAGE CAPABILITY : V
DRM
= 1200 V
DESCRIPTION
Symbol
Parameter
TPDV
Unit
625
825
1025
1225
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
600
800
1000
1200
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TPDV 625 ---> 1225 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
1/5
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Contact to ambient
50
C/W
Rth (j-c) DC Junction to case for DC
1.5
C/W
Rth (j-c) AC Junction to case for 360
conduction angle ( F= 50 Hz)
1.1
C/W
Symbol
Test Conditions
Quadrant
Value
Unit
IGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III
MAX
150
mA
VGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=125
C
I-II-III
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/
s
Tj=25
C
I-II-III
TYP
2.5
s
IL
IG=1.2 IGT
Tj=25
C
I-III
TYP
100
mA
II
200
IH *
IT= 500mA gate open
Tj=25
C
TYP
50
mA
VTM *
ITM= 35A tp= 380
s
Tj=25
C
MAX
1.8
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.02
mA
Tj=125
C
MAX
8
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=125
C
MIN
500
V/
s
(dI/dt)c *
(dV/dt)c = 200V/
s
Tj=125
C
MIN
20
A/ms
(dV/dt)c = 10V/
s
88
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
PG (AV) = 1W
PGM = 40W (tp = 20
s)
IGM = 8A (tp = 20
s)
VGM = 16V (tp = 20
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TPDV 625 ---> 1225
2/5
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
Fig.3 : RMS on-state current versus case temperature.
1E-3
1E-2
1E-1
1E +0
1 E+1
1 E+2
1 E+3
0.01
0.10
1.00
Zth/Rth
Zth( j-c)
Zt h( j-a )
tp (s )
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
TPDV 625 ---> 1225
3/5
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
:
t
10ms,
and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
Fig.9 : Safe operating area.
TPDV 625 ---> 1225
4/5
PACKAGE MECHANICAL DATA
TOP 3
Plastic
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torqur value : 1 m.N.
H
R 4.6
C
A
G
D
B
P
N
N
L
M
J
I
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
15.10
15.50
0.594
0.611
B
20.70
21.10
0.814
0.831
C
14.30
15.60
0.561
0.615
D
16.10
16.50
0.632
0.650
G
3.40
-
0.133
-
H
4.40
4.60
0.173
0.182
I
4.08
4.17
0.161
0.164
J
1.45
1.55
0.057
0.062
L
0.50
0.70
0.019
0.028
M
2.70
2.90
0.106
0.115
N
5.40
5.65
0.212
0.223
P
1.20
1.40
0.047
0.056
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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TPDV 625 ---> 1225
5/5
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