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TN8, TS8 and TYNx08 Series
SENSITIVE & STANDARD
8A SCRs
April 2002 - Ed: 4A
MAIN FEATURES:
DESCRIPTION
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
Symbol
Value
Unit
I
T(RMS)
8
A
V
DRM
/V
RRM
600 to 1000
V
I
GT
0.2 to 15
mA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 conduction angle)
Tc = 110C
8
A
IT
(AV)
Average on-state current (180 conduction angle)
Tc = 110C
5
A
TS8/TN8
TYN
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25C
73
100
A
tp = 10 ms
70
95
I
t
I
t Value for fusing
tp = 10 ms
Tj = 25C
24.5
45
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
V
RGM
Maximum peak reverse gate voltage (for TN8 & TYN only)
5
V
A
K
G
A
G
A
K
DPAK
(TS8-B)
(TN8-B)
A
A
K
G
IPAK
(TS8-H)
(TN8-H)
A
A
K
G
G
A
A
K
TO-220AB
(TS8-T)
TO-220AB
(TYNx)
TN8, TS8 and TYNx08 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
s
SENSITIVE
s
STANDARD
THERMAL RESISTANCES
S= copper surface under tab
Symbol
Test Conditions
TS820
Unit
I
GT
V
D
= 12 V R
L
= 140
MAX.
200
A
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 220
Tj = 125C
MIN.
0.1
V
V
RG
I
RG
= 10
A
MIN.
8
V
I
H
I
T
= 50 mA R
GK
= 1 k
MAX.
5
mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX.
6
mA
dV/dt
V
D
= 65 % V
DRM
R
GK
= 220
Tj = 125C
MIN.
5
V/s
V
TM
I
TM
= 16 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
46
m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 220
Tj = 25C
MAX.
5
A
Tj = 125C
1
mA
Symbol
Test Conditions
TN805 TN815
TYNx08
Unit
I
GT
V
D
= 12 V R
L
= 33
MIN.
0.5
2
2
mA
MAX.
5
15
15
V
GT
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
MIN.
0.2
V
I
H
I
T
= 100 mA Gate open
MAX.
25
40
30
mA
I
L
I
G
= 1.2 I
GT
MAX.
30
50
70
mA
dV/dt
V
D
= 67 % V
DRM
Gate open
Tj = 125C
MIN.
50
150
150
V/s
V
TM
I
TM
= 16 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
46
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 125C
2
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
20
C/W
R
th(j-a)
Junction to ambient (DC)
TO-220AB
60
C/W
IPAK
100
S = 0.5 cm
DPAK
70
/T
TN8, TS8 and TYNx08 Series
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PRODUCT SELECTOR
ORDERING INFORMATION
Part Number
Voltage (xxx)
Sensitivity
Package
600 V
700 V
800 V
1000 V
TN805-xxxB
X
X
5 mA
DPAK
TN805-xxxH
X
X
5 mA
IPAK
TN815-xxxB
X
X
15 mA
DPAK
TN815-xxxH
X
X
15 mA
IPAK
TS820-xxxB
X
X
0.2 mA
DPAK
TS820-xxxH
X
X
0.2 mA
IPAK
TS820-xxxT
X
X
0.2 mA
TO-220AB
TYNx08
X
X
X
15 mA
TO-220AB
TN 8 05 - 600 B (-TR)
STANDARD
SCR
SERIES
CURRENT: 8A
SENSITIVITY:
05: 5mA
15: 15mA
VOLTAGE:
600: 600V
800: 800V
PACKAGE:
B: DPAK
H: IPAK
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
TS 8 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
CURRENT: 8A
SENSITIVITY:
20: 200A
VOLTAGE:
600: 600V
700: 700V
PACKAGE:
B: DPAK
H: IPAK
T: TO-220AB
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
VOLTAGE:
6: 600V
8: 800V
10: 1000V
STANDARD
SCR
SERIES
CURRENT: 8A
TYN 6 08 (RG)
PACKING MODE
Blank: Bulk
RG: Tube
TN8, TS8 and TYNx08 Series
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OTHER INFORMATION
Note: x = voltage
Part Number
Marking
Weight
Base Quantity
Packing mode
TN805-x00B
TN805x00
0.3 g
75
Tube
TN805-x00B-TR
TN805x00
0.3 g
2500
Tape & reel
TN805-x00H
TN805x00
0.4 g
75
Tube
TN815-x00B
TN815x00
0.3 g
75
Tube
TN815-x00B-TR
TN815x00
0.3 g
2500
Tape & reel
TN815-x00H
TN815x00
0.4 g
75
Tube
TS820-x00B
TS820x00
0.3 g
75
Tube
TS820-x00B-TR
TS820x00
0.3 g
2500
Tape & reel
TS820-x00H
TS820x00
0.4 g
75
Tube
TS820-x00T
TS820x00T
2.3 g
50
Tube
TYNx08
TYNx08
2.3 g
250
Bulk
TYNx08RG
TYNx08
2.3 g
50
Tube
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK).
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration.
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
P(W)
= 180
IT(av)(A)
360
0
25
50
75
100
125
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
IT(av)(A)
DC
= 180
Tcase(C)
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IT(av)(A)
=180
DC
Tamb(C)
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K = [Zth(j-c)/Rth(j-c)]
tp(s)
TN8, TS8 and TYNx08 Series
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Fig. 3-2: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board for
DPAK).
Fig. 4-1: Relative variation of gate trigger current
and holding current versus junction temperature
for TS8 series.
Fig. 4-2: Relative variation of gate trigger current
and holding current versus junction temperature
for TN8 & TYN series.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS8 series.
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS8 series.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS8 series.
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K = [Zth(j-a)/Rth(j-a)]
DPAK
TO-220AB
tp(s)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C]
IGT
IH & IL
Rgk = 1k
Tj(C)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C]
IGT
IH & IL
Tj(C)
IH[Rgk] / IH[Rgk = 1k ]
Rgk(k )
Rgk(k )
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
0
20
40
60
80 100 120 140 160 180 200 220
0.0
2.5
5.0
7.5
10.0
12.5
15.0
VD = 0.67 x VDRM
Tj = 125 C
Rgk = 220
dV/dt[Cgk] / dV/dt [Rgk = 220
]
Cgk(nF)
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