ChipFind - документация

Электронный компонент: TS821AILT

Скачать:  PDF   ZIP
1/7
1.225V MICROPOWER VOLTAGE REFERENCE
.
1.225V TYP OUTPUT VOLTAGE
.
ULTRA LOW OPERATING CURRENT :
40
A
typ.
.
HIGH PRECISION @ 25
o
C
+/-2% (Standard version)
+/-1% (A grade)
+/-0.5% (B grade)
.
HIGH STABILITY WHEN USED WITH
CAPACITIVE LOADS
.
WIDE TEMPERATURE RANGE : -40 to +85
o
C
.
T092 & SOT23-3 PACKAGES
DESCRIPTION
The TS821 is a micropowerintegrated circuit which
is a high stability, two terminals, band gap refer-
ence providing a stable output voltage over the in-
dustrial temperature range (-40 to +85
o
C). The
minimum operating current is guaranteed at 50
A
over the full operating temperature range.
APPLICATIONS
.
Computers
.
Instrumentation
.
Battery chargers
.
Switch Mode Power Supply
.
Battery operated equipements
TS821
Z
TO92
(Plastic Package)
L
SOT-23L
(Plastic Micropackage)
ORDER CODES
Precision
TO92
SOT23-3
SOT23
Marking
2%
TS821IZ
TS821ILT
L213
1%
TS821AIZ
TS821AILT
L212
0.5%
TS821BIZ
TS821BILT
L211
Single temperature range : -40 to +85
o
C
PIN CONNECTIONS (top view)
May 2000
NC
Ano d e
1
2
3
Ca th o d e
TO92
1
2
3
*
Anode
Ca th ode
S OT23-3
* This pin mu st be le ft floa ting
or conn e cte d to pin 2
2/7
TS821
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
k
Reverse Breakdown Current
20
mA
I
f
Forward Current
10
mA
P
d
Power Dissipation
SOT23-3
TO92
360
625
mW
T
oper
Operating Free Air Temperature Range
-40 to +85
o
C
T
stg
Storage Temperature
-65 to +150
o
C
OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
I
rmin
Minimum Operating Current
45
A
I
rmax
Maximum Operating Current
12
mA
ELECTRICAL CHARACTERISTICS
TS821 (2% Precision)
T
amb
= 25
o
C (unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
k
Reverse Breakdown Voltage
I
k
= 100
A @ T
amb
= 25
o
C
1.200
1.225
1.250
V
Reverse Breakdown Voltage
Tolerance
I
k
= 100
A @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
-25
-36
+25
+36
mV
I
kmin
Minimum Operating Current
T
amb
= 25
o
C
40
45
A
-40
o
C < T
amb
< +85
o
C
50
A
V
ref
/
T
Average Temperature Coeffi-
cient
I
K
= 100
A
150
ppm/
o
C
V
k
/
I
k
Reverse Breakdown Voltage
Change with Operating Current
Change
I
kmin
< I
k
< 1mA @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
0.3
0.7
1
mV
1mA < I
k
< 12mA @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
2.5
5
7
mV
R
ka
Static Impedance
I
k
= 45
A to 1mA
0.25
0.5
K
vh
Long Term Stability
I
K
= 100
A, t = 1000hrs
T
amb
= 25
o
C
120
ppm
en
Wideband Noise
I
K
= 100
A
10Hz < f < 10kHz
200
nV Hz
Note :
P
d
has been calculated with T
amb
= 25
o
C and T
j
= 125
o
C and
R
thja
= 200
o
C/W for TO92 package
R
thja
= 340
o
C/W for SOT23 package
TS821
3/7
ELECTRICAL CHARACTERISTICS
TS821B (0.5% Precision)
T
amb
= 25
o
C (unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
k
Reverse Breakdown Voltage
I
k
= 100
A @ T
amb
= 25
o
C
1.219
1.225
1.231
V
Reverse Breakdown Voltage
Tolerance
I
k
= 100
A @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
-6
-14
+6
+14
mV
I
kmin
Minimum Operating Current
T
amb
= 25
o
C
40
45
A
-40
o
C < T
amb
< +85
o
C
50
A
Vref/
T Average Temperature Coeffi-
cient
I
K
= 100
A
120
ppm/
o
C
V
k
/
I
k
Reverse Breakdown Voltage
Change with Operating Current
Change
I
kmin
< I
k
< 1mA @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
0.3
0.7
1
mV
1mA < I
k
< 12mA @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
2.5
5
7
mV
R
ka
Static Impedance
I
k
= 45
A to 1mA
0.25
0.5
K
vh
Long Term Stability
I
K =
100
A, t = 1000hrs
T
amb
= 25
o
C
120
ppm
en
Wideband Noise
I
K
= 100
A
10Hz < f < 10kHz
200
nV/
Hz
ELECTRICAL CHARACTERISTICS
TS821A (1% Precision)
T
amb
= 25
o
C (unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V
k
Reverse Breakdown Voltage
I
k
= 100
A @ T
amb
= 25
o
C
1.213
1.225
1.237
V
Reverse Breakdown Voltage
Tolerance
I
k
= 100
A @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
-12
-24
+12
+24
mV
I
kmin
Minimum Operating Current
T
amb
= 25
o
C
40
45
A
-40
o
C < T
amb
< +85
o
C
50
A
V
ref
/
T
Average Temperature Coeffi-
cient
I
K
= 100
A
150
ppm/
o
C
V
k
/
I
k
Reverse Breakdown Voltage
Change with Operating Current
Change
I
kmin
< I
k
< 1mA @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
0.3
0.7
1
mV
1mA < I
k
< 12mA @ T
amb
= 25
o
C
-40
o
C < T
amb
< +85
o
C
2.5
5
7
mV
R
ka
Static Impedance
I
k
= 45
A to 1mA
0.25
0.5
K
vh
Long Term Stability
I
K =
100
, t = 1000hrs
T
amb
= 25
o
C
120
ppm/kHr
en
Wideband Noise
I
K
= 100
A
10Hz < f < 10kHz
200
nV/
Hz
TS821
4/7
Reference Voltage versus Cathode Current
Reference Voltage versus Cathode Current
Reference Voltage versus Temperature
Test Circuit
Dynamic Impedance versus Temperature
Noise Voltage versus Frequency
TS821
5/7
Pulse Response for Ik = 100
m
A
Test Circuit for Pulse Response at Ik = 100
m
A
Test Circuit for Pulse Response at Ik = 1mA
Pulse Response for Ik = 1mA