TSH150
WIDE BANDWIDTH AND BIPOLAR INPUTS
SINGLE OPERATIONAL AMPLIFIER
June 1998
ORDER CODES
Part
Number
Temperature
Range
Package
N
D
TSH150C
0
o
C, 70
o
C
TSH150I
-40
o
C, 125
o
C
150-01.TBL
1
2
3
4
8
6
5
7
Inverting Input
Non-inve rting Input
Output
Offse t Null 2
Offs et Null 1
N.C.
V
CC
V
CC
+
150-01.EPS
PIN CONNECTIONS (top view)
.
LOW DISTORTION
.
GAIN BANDWIDTH PRODUCT : 150MHz
.
UNITY GAIN STABLE
.
SLEW RATE : 190V/
s
.
VERY FAST SETTLING TIME : 20ns (0.1%)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
DESCRIPTION:
The TSH150 is a wideband monolithic operational
amplifier, internally compensated for unity-gain
stability.
Low noise and low distortion, wide bandwidth and
high linearity make this amplifier suitable for RF and
video applications. Short circuit protection is pro-
vided by an internal current-limiting circuit.
The TSH150 has internal electrostatic discharge
(ESD) protection circuits and fulfills MILSTD883C-
Class2.
1/7
3
non inverting
input
2
inverting
input
1
8
Offse t N1
Offse t N2
7 V
CC
+
C
c
6
output
V
CC
-
4
V
Inte rna l
ref
150-02.EPS
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
7
V
V
id
Differential Input Voltage
5
V
V
i
Input Voltage Range
5
V
I
in
Current On Inputs
Current On Offset Null Pins
50
20
mA
T
oper
Operating Free-Air Temperature Range
TSH150C
TSH150I
0 to +70
-40 to +125
o
C
T
stg
Storage Temperature Range
-65 to 150
o
C
150-02.TBL
N1
N2
TS H150
100k
V
CC
150-03.EPS
INPUT OFFSET VOLTAGE NULL CIRCUIT
OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
3 to
6
V
V
ic
Common Mode Input Voltage Range
V
CC
-
+2 to V
CC
+
-1
V
150-03.TBL
TSH150
2/7
ELECTRICAL CHARACTERISTICS
V
CC
=
5V, T
amb
= 25
o
C (unless otherwise specified)
Symbol
Parameter
TSH150C, I
Unit
Min.
Typ.
Max.
V
io
Input Offset Voltage
T
min
T
amb
T
max.
0.3
5
7
mV
DV
io
Input Offset Voltage Drift
T
min
T
amb
T
max.
10
V/
o
C
I
ib
Input Bias Current
5
30
A
I
io
Input Offset Current
0.1
2
A
I
CC
Supply Current, no load
V
CC
=
5V
V
CC
=
3V
V
CC
=
6V
T
min
T
amb
T
max.
V
CC
=
5V
23
21
25
30
28
40
32
mA
A
vd
Large Signal Voltage Gain
V
o
=
2.5V
R
L
=
R
L
= 100
R
L
= 50
800
300
200
1300
850
650
V/V
V
icm
Input Common Mode Voltage Range
-3 to +4
-3.5 to +4.5
V
CMR
Common Mode Rejection Ratio
V
ic
= V
icm min.
60
100
dB
SVR
Supply Voltage Rejection Ratio
V
CC
=
5V to
3V
50
70
dB
V
o
Output Voltage
R
L
= 100
R
L
= 50
T
min
T
amb
T
max.
R
L
= 100
R
L
= 50
3
2.8
2.9
2.7
+3.5
-3.7
+3.3
-3.5
V
I
o
Output Short Circuit Current
V
id
=
1V, V
o
= 0V
50
100
mA
GBP
Gain Bandwidth Product
A
VCL
= 100, R
L
= 100
, C
L
= 15pF, f = 7.5MHz
150
MHz
SR
Slew Rate
V
in
=
2V, A
VCL
= 1, R
L
= 100
, C
L
= 15pF
100
190
V/
s
e
n
Equivalent Input Voltage Noise
R
S
= 50
fo = 1kHz
fo = 10kHz
fo = 100kHz
fo = 1MHz
7
6.5
6.2
5.5
nV
Hz
K
ov
Overshoot
V
in
=
2V, A
VCL
= 1, R
L
= 100
, C
L
= 15pF
5
%
t
s
Settling Time 0.1% - (note 1)
V
in
=
1V, A
VCL
= -1
20
ns
t
r
, t
f
Rise and Fall Time - (note 1)
V
in
=
100mV, A
VCL
= 2
3.5
ns
t
d
Delay Time - (note 1)
V
in
=
100mV, A
VCL
= 2
2.5
ns
m
Phase Margin
A
VM
= 1, R
L
= 100
, C
L
= 15pF
50
Degrees
THD
Total Harmonic Distortion
A
VCL
= 10, f = 1KHz, V
o
=
2.5V, no load
0.02
%
FPB
Full Power Bandwidth - (note 2)
V
o
= 5Vpp, R
L
= 100
V
o
= 2Vpp, R
L
= 100
12
30
MHz
Note 1 :
See test waveform figure
Note 2 :
Full power bandwidth =
SR
V
opp
150-04.TBL
TSH150
3/7
V
in
50%
t
d
t
r
90%
t
s
0.1% of e dge a mplitude
10%
150-04.EPS
TEST WAVEFORM
Input
50
1k
10nF
10
F
C
F
-5V
+5V
10nF
Output
50
10
F
1k
150-05.EPS
EVALUATION CIRCUIT
As for any high frequency device, a few rules must
be observed when designing the PCB to get the best
performances from this high speed op amp.
From the most to the least important points :
Each power supply lead has to be bypassed
to ground with a 10nF ceramic capacitor very
close to the device and a 10
F tantalum ca-
pacitor.
To provide low inductance and low resistance
common return, use a ground plane or com-
mon point return for power and signal.
All leads must be wide and as short as possi-
ble especially for op amp inputs. This is in
order to decrease parasitic capacitance and
inductance.
Use small resistor values to decrease time
constant with parasitic capacitance. Be aware
on TSH150 device of the I
io
error and input
noise currents with high feedback resistor val-
ues.
Choose component sizes as small as possible
(SMD).
On output, decrease capacitor load so as to
avoid circuit stability being degraded which
may cause oscillation. You can also add a
serial resistor in order to minimise its influ-
ence.
One can add in parallel with feedback resistor
a few pF ceramic capacitor C
F
adjusted to
optimize the settling time.
PRINTED CIRCUIT LAYOUT
TSH150
4/7
.
LOW DISTORTION
.
GAIN BANDWIDTH PRODUCT : 150MHz
.
UNITY GAIN STABLE
.
SLEW RATE : 190V/
s
.
VERY FAST SETTLING TIME : 20ns (0.1%)
MACROMODEL
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIV E POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TSH150 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=1.568191E-15 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 1.040000E+02
RIN 15 16 1.040000E+02
RIS 11 15 3.264539E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC -9.162265E-05
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-03
CPS 11 15 5.757255E-12
DINN 17 13 MDTH 400E-12
VIN 17 5 1.5000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.500000E+00
FCP 4 5 VOFP 2.200000E+01
FCN 5 4 VOFN 2.200000E+01
FIBP 2 5 VOFP 1.000000E-02
FIBN 5 1 VOFN 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.370000E+02
FIN 5 19 VOFN 4.370000E+02
RG1 19 5 1.124121E+03
RG2 19 4 1.124121E+03
CC 19 29 2.000000E-09
HZTP 30 29 VOFP 5.574976E+01
HZTN 5 30 VOFN 5.574976E+01
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 5.000000E+02
VIPM 28 4 5.000000E+01
HONM 21 27 VOUT 5.000000E+02
VINM 5 27 5.000000E+01
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 2.180423E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.511965E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.511965E+00
.ENDS
Applies to : TSH150C,I
ELECTRICAL CHARACTERISTICS
V
CC
=
5V, T
amb
= 25
o
C (unless otherwise specified)
Symbol
Conditions
Value
Unit
V
io
0
mV
A
vd
R
L
= 100
1
V/mV
I
CC
No load
21
mA
V
icm
-3.5 to 4.5
V
V
OH
R
L
= 100
+3.6
V
V
OL
R
L
= 100
-3.6
V
I
sink
V
O
= 0V
108
mA
I
source
V
O
= 0V
108
mA
GBP
R
L
= 100
,
C
L
= 15pF
147
MHz
SR
R
L
= 100
,
C
L
= 15pF
180
V/
s
m
R
L
= 100
,
C
L
= 15pF
42
Degrees
t
s
A
V
= -1 at 0.1%
22.6
ns
TSH150
5/7
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