TXN/TYN 0512 --->
TXN/TYN 1012
April 1995
SCR
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180
conduction angle)
TXN
TYN
Tc=80
C
Tc=90
C
12
A
IT(AV)
Average on-state current
(180
conduction angle,single phase circuit)
TXN
TYN
Tc=80
C
Tc=90
C
8
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp=8.3 ms
125
A
tp=10 ms
120
I2t
I2t value
tp=10 ms
72
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/
s
100
A/
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
C
TO220AB
(Plastic)
K
A
G
.
HIGH SURGE CAPABILITY
.
HIGH ON-STATE CURRENT
.
HIGH STABILITY AND RELIABILITY
.
TXN Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
TYN/TXN
Unit
0512
112
212
412
612
812
1012
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
50
100
200
400
600
800
1000
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Cont rolled Rectifiers uses a high per-
formance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
C/W
Rth (j-c) DC Junction to case for DC
TXN
3.5
C/W
TYN
2.5
Symbol
Test Conditions
Value
Unit
IGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
15
mA
VGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125
C
MIN
0.2
V
tgt
VD=VDRM IG = 40mA
dIG/dt = 0.5A/
s
Tj=25
C
TYP
2
s
IL
IG= 1.2 IGT
Tj=25
C
TYP
50
mA
IH
IT= 100mA
gate open
Tj=25
C
MAX
30
mA
VTM
ITM= 24A
tp= 380
s
Tj=25
C
MAX
1.6
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.01
mA
Tj= 125
C
3
dV/dt
Linear slope up to VD=67%VDRM
gate open
Tj= 125
C
MIN
200
V/
s
tq
VD=67%VDRM
ITM= 24A
VR= 25V
dITM/dt=30 A/
s
dVD/dt= 50V/
s
Tj= 125
C
TYP
70
s
PG (AV) = 1W
PGM = 10W (tp = 20
s)
IFGM = 4A (tp = 20
s)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 0512 ---> TXN/TYN 1012
2/5
Fig.3 : Maximum average power dissipation versus
average on-state current (TYN).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (TYN).
Fig.1 : Maximum average power dissipation versus
average on-state current (TXN).
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (TXN).
Fig.5
:
Average
on-state
current
versus
case
temperature (TXN).
Fig.6
:
Average
on-state
current
versus
case
temperature (TYN).
TXN/TYN 0512 ---> TXN/TYN 1012
3/5
Fig.9 :
Non repetitive surge peak on-state current
versus number of cycles.
Fig.10 : Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t
10 ms, and
corresponding value of I2t.
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
0.01
0.1
1
Zth/Rth
Zt h( j-c )
Zt h(j-a)
tp( s)
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
Fig.11 : On-state characteristics (maximum values).
TXN/TYN 0512 ---> TXN/TYN 1012
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : by conduction (method C)
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
A
G
J
H
D
B
C
M
L
F
O
P
= N =
I
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10.00
10.40
0.393
0.409
B
15.20
15.90
0.598
0.625
C
13.00
14.00
0.511
0.551
D
6.20
6.60
0.244
0.259
F
3.50
4.20
0.137
0.165
G
2.65
2.95
0.104
0.116
H
4.40
4.60
0.173
0.181
I
3.75
3.85
0.147
0.151
J
1.23
1.32
0.048
0.051
L
0.49
0.70
0.019
0.027
M
2.40
2.72
0.094
0.107
N
4.80
5.40
0.188
0.212
O
1.14
1.70
0.044
0.066
P
0.61
0.88
0.024
0.034
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
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TXN/TYN 0512 ---> TXN/TYN 1012
5/5
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