TYN 682 ---> TYN 692
March 1995
SCR
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180
conduction angle)
Tc = 105
C
20
A
IT(AV)
Average on-state current
(180
conduction angle, single phase circuit)
Tc = 105
C
13
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 8.3 ms
260
A
tp = 10 ms
250
I2t
I2t value
tp = 10 ms
310
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/
s
100
A/
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
C
TO220AB
(Plastic)
K
A
G
.
HIGH SURGE CAPABILITY
.
HIGH ON-STATE CURRENT
.
HIGH STABILITY AND RELIABILITY
DESCRIPTION
Symbol
Parameter
TYN
Unit
682
683
685
688
690
692
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
50
100
200
400
600
800
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYN 682 ---> TYN 692 Family Silicon Control-
led Rectifiers are high performance glass passi-
vated chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
1/4
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
C/W
Rth (j-c) DC Junction to case for DC
1.3
C/W
Symbol
Test Conditions
Value
Unit
IGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
25
mA
VGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125
C
MIN
0.2
V
tgt
VD=VDRM IG = 200mA
dIG/dt = 1.5A/
s
Tj=25
C
TYP
2
s
IL
IG= 1.2 IGT
Tj=25
C
TYP
70
mA
IH
IT= 100mA
gate open
Tj=25
C
MAX
40
mA
VTM
ITM= 50A
tp= 380
s
Tj=25
C
MAX
1.4
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.01
mA
Tj= 125
C
2
dV/dt
Linear slope up to VD=67%VDRM
gate open
Tj= 125
C
MIN
500
V/
s
tq
VD=67%VDRM
ITM= 50A
VR= 25V
dITM/dt=30 A/
s
dVD/dt= 50V/
s
Tj= 125
C
TYP
70
s
PG (AV) = 1W
PGM = 10W (tp = 20
s)
IFGM = 4A (tp = 20
s)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TYN 682 ---> TYN 692
2/4
Fig.1 : Maximum average power dissipation versus
average on-state current.
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
Fig.5 : Relative variation of gate trigger current versus
junction temperature.
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
Fig.3
:
Average
on-state
current
versus
case
temperature.
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
0.01
0.1
1
Zth/Rth
Zt h( j-c )
Zt h( j-a )
tp (s )
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
TYN 682 ---> TYN 692
3/4
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
:
t
10
ms,
and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10.00
10.40
0.393
0.409
B
15.20
15.90
0.598
0.625
C
13.00
14.00
0.511
0.551
D
6.20
6.60
0.244
0.259
F
3.50
4.20
0.137
0.165
G
2.65
2.95
0.104
0.116
H
4.40
4.60
0.173
0.181
I
3.75
3.85
0.147
0.151
J
1.23
1.32
0.048
0.051
L
0.49
0.70
0.019
0.027
M
2.40
2.72
0.094
0.107
N
4.80
5.40
0.188
0.212
O
1.14
1.70
0.044
0.066
P
0.61
0.88
0.024
0.034
A
G
J
H
D
B
C
M
L
F
O
P
= N =
I
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
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TYN 682 ---> TYN 692
4/4
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