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Электронный компонент: VIPER53DIP

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June 2004
1/24
VIPer53DIP
VIPer53SP
OFF LINE PRIMARY SWITCH
TYPICAL OUTPUT POWER CAPABILITY
Note:
Above power capabilities are given under adequate
thermal conditions
FEATURES
n
SWITCHING FREQUENCY UP TO 300 kHz
n
CURRENT LIMITATION
n
CURRENT MODE CONTROL WITH
ADJUSTABLE LIMITATION
n
SOFT START AND SHUT DOWN CONTROL
n
AUTOMATIC BURST MODE IN STAND-BY
CONDITION ("BLUE ANGEL" COMPLIANT)
n
UNDERVOLTAGE LOCKOUT WITH
HYSTERESIS
n
HIGH VOLTAGE STARTUP CURRENT
SOURCE
n
OVERTEMPERATURE PROTECTION
n
OVERLOAD AND SHORT-CIRCUIT CONTROL
DESCRIPTION
The VIPer53 combines in the same package an
enhanced current mode PWM controller with a
high voltage MDMesh Power Mosfet. Typical
applications cover off line power supplies with a
secondary power capability ranging up to 30W in
wide range input voltage or 50W in single
European voltage range and DIP-8 package, with
the following benefits:
Overload and short circuit controlled by
feedback monitoring and delayed device reset.
Efficient standby mode by enhanced pulse
skipping.
Primary regulation or secondary loop failure
protection through high gain error amplifier.
TYPE
European
(195 - 265 Vac)
US / Wide range
(85 - 265 Vac)
DIP-8
50W
30W
PowerSO-10
TM
65W
40W
1
10
DIP-8
PowerSO-10
TM
BLOCK DIAGRAM
FF
OSCILLATOR
150/400ns
BLANKING
1V
4V
OVERTEMP.
DETECTOR
8.4/
11.5V
15V
0.5V
VDD
OSC
DRAIN
TOVL
COMP
SOURCE
PWM
LATCH
ON/OFF
BLANKING TIME
SELECTION
PWM
COMPARATOR
CURRENT
AMPLIFIER
S
R1
R2
R3
R4
R5
Q
8V
4.35V
OVERLOAD
COMPARATOR
18V
4.5V
125k
0.5V
STANDBY
COMPARATOR
OVERVOLTAGE
COMPARATOR
ERROR
AMPLIFIER
UVLO
COMPARATOR
H
COMP
VIPer53DIP / VIPer53SP
2/24
PIN FUNCTION
CURRENT AND VOLTAGE CONVENTIONS
CONNECTION DIAGRAM
ORDER CODES
Name
Function
V
DD
Power supply of the control circuits. Also provides the charging current of the external capacitor during
start-up. The functions of this pin are managed by four threshold voltages:
- V
DDon
: Voltage value at which the device starts switching (Typically 11.5 V).
- V
DDoff
: Voltage value at which the device stops switching (Typically 8.4 V).
- V
DDreg
: Regulation voltage point when working in primary feedback (Trimmed to 15 V).
- V
DDovp
: Triggering voltage of the overvoltage protection (Trimmed to 18 V).
SOURCE
Power Mosfet source and circuit ground reference.
DRAIN
Power Mosfet drain. Also used by the internal high voltage current source during the start-up phase, for
charging the external V
DD
capacitor.
COMP
Input of the current mode structure, and output of the internal error amplifier. Allows the setting of the
dynamic characteristic of the converter through an external passive network. Useful voltage range
extends from 0.5 V to 4.5 V. The Power Mosfet is always off below 0.5 V, and the overload protection is
triggered if the voltage exceeds 4.35V. This action is delayed by the timing capacitor connected to the
TOVL pin.
TOVL
Allows the connection of an external capacitor for delaying the overload protection, which is triggered by
a voltage on the COMP pin higher than 4.35V.
OSC
Allows the setting of the switching frequency through an external Rt-Ct network.
PACKAGE
TUBE
TAPE and REEL
DIP-8
VIPer53DIP
-
PowerSO-10
TM
VIPer53SP
VIPer53SP13TR
15V
VDD
OSC
DRAIN
SOURCE
COMP
TOVL
I
DD
V
DD
I
OSC
V
OSC
I
TOVL
V
TOVL
I
COMP
V
COMP
I
D
V
DS
1
2
3
4
5
10
9
8
7
6
VDD
TOVL
NC
NC
NC
OSC
COMP
NC
NC
SOURCE
DRAIN
SOURCE
TOVL
COMP
VDD
NC
DRAIN
SOURCE
1
5
4
8
7
6
2
3
OSC
DIP-8
PowerSO-10
TM
VIPer53DIP / VIPer53SP
3/24
ABSOLUTE MAXIMUM RATINGS
Note: 1. In order to improve the ruggedness of the device versus eventual drain overvoltages, a resistance of 1 k
should be inserted in
series with the TOVL pin.
THERMAL DATA
Note: 2. When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35
m thick) connected to the DRAIN pin.
3. When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35
m thick) connected to the device tab.
Symbol
Parameter
Value
Unit
V
DS
Continuous Drain Source Voltage (T
j
=25 ... 125C)
(See note 1)
-0.3 ... 620
V
I
D
Continuous Drain Current
Internally limited
A
V
DD
Supply Voltage
0 ... 19
V
V
OSC
OSC Input Voltage Range
0 ... V
DD
V
I
COMP
I
TOVL
COMP and TOVL Input Current Range
(See note 1)
-2 ... 2
mA
V
ESD
Electrostatic Discharge:
Machine Model (R=0
; C=200pF)
Charged Device Model
200
1.5
V
kV
T
j
Junction Operating Temperature
Internally limited
C
T
c
Case Operating Temperature
-40 to 150
C
T
stg
Storage Temperature
-55 to 150
C
Symbol
Parameter
Max Value
Unit
R
thj-case
DIP-8
20
C/W
R
thj-amb
DIP-8
(See note 2)
80
C/W
R
thj-case
PowerSO-10
TM
2
C/W
R
thj-amb
PowerSO-10
TM
(See note 3)
60
C/W
VIPer53DIP / VIPer53SP
4/24
ELECTRICAL CHARACTERISTICS (T
j
=25C, V
DD
=13V, unless otherwise specified)
POWER SECTION
Note 4. On clamped inductive load
5. This parameter can be used to compute the energy dissipated at turn on E
ton
according to the initial drain to source voltage V
DSon
and the following formula:
OSCILLATOR SECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
Drain-Source Voltage
I
D
=1mA; V
COMP
=0V
620
V
I
DSS
Off State Drain Current
V
DS
=500V; V
COMP
=0V; T
j
=125C
150
A
R
DS(on)
Static Drain-Source
On State Resistance
I
D
=1A; V
COMP
=4.5V; V
TOVL
=0V
T
j
=25C
T
j
=100C
0.9
1
1.7
t
fv
Fall Time
I
D
=0.2A; V
IN
=300V
(See figure 1 and note 4)
100
ns
t
rv
Rise Time
I
D
=1A; V
IN
=300V
(See figure 1 and note 4)
50
ns
C
oss
Drain Capacitance
V
DS
=25V
170
pF
C
Eon
Effective Output
Capacitance
200V < V
DSon
< 400V
(See note 5)
60
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
F
OSC1
Oscillator Frequency
Initial Accuracy
R
T
=8k
; C
T
=2.2nF
(See figure 9)
95
100
105
kHz
F
OSC2
Oscillator Frequency
Total Variation
R
T
=8k
; C
T
=2.2nF
(See figure 12)
V
DD
=V
DDon
... V
DDovp
; T
j
=0 ... 100C
93
100
107
kHz
V
OSChi
Oscillator Peak Voltage
9
V
V
OSClo
Oscillator Valley Voltage
4
V
E
ton
1
2
--- C
Eon
300
2
V
DSon
300
----------------
1.5
=
VIPer53DIP / VIPer53SP
5/24
ELECTRICAL CHARACTERISTICS (T
j
=25C, V
DD
=13V, unless otherwise specified)
SUPPLY SECTION
ERROR AMPLIFIER SECTION
Note 6. In order to insure a correct stability of the error amplifier, a capacitor of 10nF (minimum value: 8nF) should always be present on
the COMP pin.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DSstart
Drain Voltage Starting
Threshold
V
DD
=5V; I
DD
=0mA
34
50
V
I
DDch1
Startup Charging Current
V
DD
=0 ... 5V; V
DS
=100V
(See figure 2)
-12
mA
I
DDch2
Startup Charging Current
V
DD
=10V; V
DS
=100V
(See figure 2)
-2
mA
I
DDchoff
Startup Charging Current
in Thermal Shutdown
V
DD
=5V; V
DS
=100V
(See figure 5)
T
j
> T
SD
- T
HYST
0
mA
I
DD0
Operating Supply Current
Not Switching
F
sw
=0kHz; V
COMP
=0V
8
11
mA
I
DD1
Operating Supply Current
Switching
F
sw
=100kHz
9
mA
V
DDoff
V
DD
Undervoltage
Shutdown Threshold
(See figure 2)
7.5
8.4
9.3
V
V
DDon
V
DD
Startup Threshold
(See figure 2)
10.2
11.5
12.8
V
V
DDhyst
V
DD
Threshold
Hysteresis
(See figure 2)
2.6
3.1
V
V
DDovp
V
DD
Overvoltage
Shutdown Threshold
(See figure 7)
17
18
19
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DDreg
V
DD
Regulation Point
I
COMP
=0mA
(See figure 3)
14.5
15
15.5
V
V
DDreg
V
DD
Regulation Point
Total Variation
I
COMP
=0mA; T
j
=0 ... 100C
2
%
G
BW
Unity Gain Bandwidth
From Input =V
DD
to Output = V
COMP
I
COMP
=0mA
(See figure 10)
700
kHz
AV
OL
Voltage Gain
I
COMP
=0mA
(See figure 10)
40
45
dB
G
m
DC Transconductance
V
COMP
=2.5V
(See figure 3)
1
1.4
1.8
mS
V
COMPlo
Output Low Level
I
COMP
=-0.4mA; V
DD
=16V
0.2
V
V
COMPhi
Output High Level
I
COMP
=0.4mA; V
DD
=14V
(See note 6)
4.5
V
I
COMPlo
Output Sinking Current
V
COMP
=2.5V; V
DD
=16V
(See figure 3)
-0.6
mA
I
COMPhi
Output Sourcing Current
V
COMP
=2.5V; V
DD
=14V
(See figure 3)
0.6
mA