VN02ANSP
HIGH SIDE SMART POWER SOLID STATE RELAY
July 1998
1
10
PowerSO-10
TM
BLOCK DIAGRAM
T YPE
V
DSS
R
DS( on
)
I
OUT
V
CC
VN02ANSP
60 V
0. 35
7 A
36 V
s
OUTPUT CURRENT (CONTINUOUS):
7A @ T
c
=25
o
C
s
LOGIC LEVEL 5V COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE PROTECTION
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
FAST DEMAGNETIZATION OF INDUCTIVE
LOAD
DESCRIPTION
The VN02ANSP is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit. The diagnostic
output indicates an over temperature status.
Fast turn-off of inductive load is achieved by
negative (-18 V) load voltage at turn-off.
1/9
ABSOLUTE MAXIMUM RATING
Symb ol
Parameter
Valu e
Unit
V
(BR)DSS
Drain-Source Breakdown Voltage
60
V
I
OUT
Output Current (cont.)
7
A
I
R
Reverse Output Current
-7
A
I
IN
Input Current
10
mA
-V
CC
Reverse Supply Voltage
-4
V
I
STAT
St atus Current (sink)
10
mA
V
ESD
Electrostatic Discharge (1.5 k
, 100 pF)
2000
V
P
tot
Power Dissipation at T
c
25
o
C
31
W
T
j
Junct ion Operating Temperature
-40 to 150
o
C
T
s tg
St orage Temperature
-55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VN02ANSP
2/9
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient ($)
Max
4
50
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (V
CC
= 9 to 36 V; T
case
= 25
o
C unless otherwise specified)
POWER
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
CC
*
Supply Voltage
-40
o
C < T
j
< 125
o
C
7
36
V
R
on
On Stat e Resistance
I
OUT
= 3 A
I
OUT
= 1 A
V
CC
= 30 V
T
j
= 125
o
C
0.35
0.6
I
S
Supply Current
Of f St ate V
CC
= 30 V
On Stat e V
CC
= 30 V
On Stat e V
CC
= 30 V T
j
= 125
o
C
1
9
7
mA
mA
mA
SWITCHING
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
Turn-on Delay Time Of
Output Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
15
s
t
r
Rise Time O f O utput
Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
15
s
t
d(of f)
Turn-off Delay Time O f
Output Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
14
s
t
f
Fall T ime Of Output
Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
4.5
s
(di/ dt)
on
Turn-on Current Slope
I
OUT
= 3 A
25
o
C < T
j
< 125
o
C
I
OUT
= I
OV
25
o
C < T
j
< 125
o
C
0.5
1
A/
s
A/
s
(di/dt)
off
Turn-off Current Slope
I
OUT
= 3 A
25
o
C < T
j
< 125
o
C
I
OUT
= I
OV
25
o
C < T
j
< 125
o
C
1.5
4
A/
s
A/
s
V
DEMAG
Inductive Load Clamp
Voltage
I
OUT
= 3 A
-40
o
C < T
j
< 125
o
C
-24
-18
-14
V
LOGIC INPUT (-40
o
C
T
j
125
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
I L
Input Low Level
Voltage
0.8
V
V
I H
Input High Level
Voltage
2
(*)
V
V
I(hyst.)
Input Hysteresis
Voltage
0.5
V
I
IN
Input Current
V
I N
= 5 V
V
I N
= 2 V
V
I N
= 0.8 V
25
250
600
300
A
A
A
V
ICL
Input Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
5. 5
6
-0. 7
-0.3
V
V
VN02ANSP
3/9
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (-40
o
C
T
j
125
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
STAT
St atus Voltage Out put
Low
I
STAT
= 1.6 mA
0.4
V
I
STAT
St atus Leakage Current V
STAT
= 5 V
10
A
V
USD
Under Voltage Shut
Down
3. 5
6
7
V
V
SCL
St atus Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
5. 5
6
-0. 7
-0.3
V
V
I
OV
Over Current
R
LOAD
< 10 m
15
A
I
av
Average Current I n
Short Circuit
R
LOAD
< 10 m
T
c
= 85
o
C
0.6
A
I
DOFF
Leakage Current
V
CC
= 30 V
1
mA
T
TSD
Thermal Shut-down
Temperat ure
140
o
C
T
R
Reset Temperature
125
o
C
(*) The Vih is internally clamped at about 6V. It is possible to connect this pin to a higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
TRUTH TABLE
I NPUT
DIAGNO ST IC
O UTPUT
Normal Operation
L
H
H
H
L
H
O ver-t emperature
H
L
L
Under-voltage
X
H
L
Figure 1: Waveforms
VN02ANSP
4/9
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates over temperature conditions.
The truth table shows input, diagnostic output
status and
output voltage level in
normal
operation and fault conditions. The output signals
are processed by internal logic.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
o
C. When the
temperature returns to 125
o
C the switch is
automatically turned on again. To ensure the
protection in all V
CC
conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 28V according to:
V
ds
= V
CC
- I
OV
* (R
i
+ R
w
+ R
l
)
where:
R
i
= internal resistence of Power Supply
R
w
= Wires resistance
R
l
= Short Circuit resistance
Driving inductive loads, an internal function of the
device ensures the fast demagnetization with
typical voltage (V
demag
) of -18V.
This function allows the reduction of the power
dissipation according to the formula:
P
dem
= 0.5 * L
load
* (I
load
)
2
* [(V
CC
+ V
dem
)/V
dem
] * f
where f = Switching Frequency
Based on this formula it is possible to know the
value of inductance and/or current to avoid a
thermal shut-down.
PROTECTING THE DEVICE AGAINST RE-
VERSE BATTERY
The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
across this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (V
il
, V
ih
thresholds and Vstat are increased by V
f
with
respect to power GND).
The undervoltage shut-down level is increased by
V
f
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
ih
, V
il
and V
stat
. This
solution allows the use of a standard diode.
Figure 2: Over Current Test Circuit
VN02ANSP
5/9
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