VN02H
HIGH SIDE SMART POWER SOLID STATE RELAY
March 1999
BLOCK DIAGRAM
T YPE
V
DSS
R
DS(on
)
I
OUT
V
CC
VN02H
60 V
0.4
6 A
36 V
s
OUTPUT CURRENT (CONTINUOUS):
6A @ T
c
=25
o
C
s
5V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE SHUT-DOWN
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN02H is a monolithic devices made using
STMicroelectronics
VIPower
Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
ORDER CODES:
PENTAWATT vertical
VN02H
PENTAWATT horizontal
VN02H(011Y)
PENTAWATT in-line
VN02H(012Y)
PENTAWATT
(in-line)
1/10
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resist ance Junct ion-ambient
Max
4.4
60
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (V
CC
= 9 to 36 V; -40
T
j
125
o
C unless otherwise specified)
POWER
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
CC
Supply Voltage
see note 1
5
36
V
R
on
On Stat e Resistance
I
OUT
= 3 A
I
OUT
= 3 A
T
j
= 25
o
C
0.8
0.4
I
S
Supply Current
Of f St ate
T
j
25
o
C
On Stat e
50
20
A
mA
SWITCHING
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
Turn-on Delay Time Of
Output Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
5
10
20
s
t
r
Rise Time O f O utput
Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
5
15
45
s
t
d(of f)
Turn-off Delay Time O f
Output Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
5
15
30
s
t
f
Fall T ime Of Output
Current
I
OUT
= 3 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
2
6
15
s
(di/ dt)
on
Turn-on Current Slope
I
OUT
= 3 A
I
OUT
= I
OV
25
T
j
140
o
C
0.05
0. 15
0.5
2
A/
s
A/
s
(di/dt)
off
Turn-off Current Slope
I
OUT
= 3 A
I
OUT
= I
OV
25
T
j
140
o
C
0. 1
0.4
2
4
A/
s
A/
s
V
dem ag
Inductive Load Clamp
Voltage
I
OUT
= 3 A
L = 1 mH
-7
-4
-2
V
LOGIC INPUT
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
I L
Input Low Level
Voltage
0.8
V
V
I H
Input High Level
Voltage
2
(*)
V
V
I(hyst.)
Input Hysteresis
Voltage
0.5
V
I
IN
Input Current
V
I N
= 5 V
250
500
A
V
ICL
Input Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
5. 5
6
-0. 7
-0.3
V
V
VN02H
3/10
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
STAT
(
)
St atus Voltage Out put
Low
I
STAT
= 1.6 mA
0.4
V
V
USD
Under Voltage Shut
Down
2. 5
5
V
V
SCL
(
)
St atus Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
5. 5
6
-0. 7
-0.3
V
V
t
SC
Switch-off T ime in
Short Circuit Condition
at Start -Up
R
LOAD
< 10 m
V
CC
= 13 V
T
c
= 25
o
C
1.5
5
ms
I
OV
Over Current
R
LOAD
< 10 m
V
CC
= 13 V
28
A
I
AV
Average Current in
Short Circuit
R
LOAD
< 10 m
V
CC
= 13 V
T
c
= 85
o
C
0.9
1.8
A
I
OL
Open Load Current
Level
9 < V
CC
< 32 V
5
70
mA
I
OUT
Leakage Current
Of f St ate
V
OUT
= 0 V
60
A
T
TSD
Thermal Shut-down
Temperat ure
140
160
o
C
T
R
Reset Temperature
125
145
o
C
(*) The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(
)
Status determination > 100
s after the switching edge.
Note 1 : Above V
CC
= 36 V the output voltage is clamped to 36 V. Power dissipation increases and the device turns off if junction
temperature reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates
open
circuit (no
load)
and
over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
o
C. When the
temperature returns to about 125
o
C the switch is
automatically turned on again. To ensur the
protection in all V
CC
conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above V
CC
= 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
-
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to power GND).
-
The undervoltage shutdown level is increased
by V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN02H
4/10
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