VN02NSP
VN02NPT
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
September 1997
1
10
PowerSO-10
TM
PPAK
BLOCK DIAGRAM
TYPE
V
DSS
R
DS(on
)
I
OUT
V
CC
VN02NSP
60 V
0.4
6 A
26 V
VN02NPT
60 V
0.4
6 A
26 V
s
OUTPUT CURRENT (CONTINUOUS):
6A @ T
c
=25
o
C
s
5V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE SHUT-DOWN
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN02NSP/VN02NPT are monolithic devices
made using SGS-THOMSON Vertical Intelligent
Power Technology, intended for driving resistive
or inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
1/10
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
PowerSO-10
PPAK
V
(BR)DSS
Drain-Source Breakdown Voltage
60
V
I
OUT
Output Current (cont.)
6
A
I
R
Reverse Output Current
-6
A
I
IN
Input Current
10
mA
-V
CC
Reverse Supply Voltage
-4
V
I
STAT
Status Current
10
mA
V
ESD
Electrostatic Discharge (1.5 k
, 100 pF)
2000
V
P
tot
Power Dissipation at T
c
25
o
C
58
46
W
T
j
Junction Operating Temperature
-40 to 150
o
C
T
stg
Storage Temperature
-55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VN02NSP/VN02NPT
2/10
THERMAL DATA
PowerSO-10
PPAK
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max
2.14
62.5
3.33
100
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (V
CC
= 13 V; -40
T
j
125
o
C unless otherwise specified)
POWER
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
7
26
V
R
on
On State Resistance
I
OUT
= 3 A
I
OUT
= 3 A T
j
= 25
o
C
0.8
0.4
I
S
Supply Current
Off State T
j
25
o
C
On State
50
15
A
mA
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time Of
Output Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1
s T
j
= 25
o
C
10
s
t
r
Rise Time Of Output
Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1
s T
j
= 25
o
C
15
s
t
d(off)
Turn-off Delay Time Of
Output Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1
s T
j
= 25
o
C
15
s
t
f
Fall Time Of Output
Current
I
OUT
= 3 A Resistive Load
Input Rise Time < 0.1
s T
j
= 25
o
C
6
s
(di/dt)
on
Turn-on Current Slope
I
OUT
= 3 A
I
OUT
= I
OV
0.5
2
A/
s
A/
s
(di/dt)
off
Turn-off Current Slope
I
OUT
= 3 A
I
OUT
= I
OV
2
4
A/
s
A/
s
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IL
Input Low Level
Voltage
0.8
V
V
IH
Input High Level
Voltage
2
(*)
V
V
I(hyst.)
Input Hysteresis
Voltage
0.5
V
I
IN
Input Current
V
IN
= 5 V
250
500
A
V
ICL
Input Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
6
-0.7
V
V
VN02NSP/VN02NPT
3/10
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
STAT
(
)
Status Voltage Output
Low
I
STAT
= 1.6 mA
0.4
V
V
USD
Under Voltage Shut
Down
6.5
V
V
SCL
()
Status Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
6
-0.7
V
V
t
SC
Switch-off Time in
Short Circuit Condition
at Start-Up
R
LOAD
< 10 m
T
c
= 25
o
C
1.5
5
ms
I
OV
Over Current
R
LOAD
< 10 m
-40 T
c
125
o
C
28
A
I
AV
Average Current in
Short Circuit
R
LOAD
< 10 m
T
c
= 85
o
C
0.9
A
I
OL
Open Load Current
Level
5
70
mA
T
TSD
Thermal Shut-down
Temperature
140
o
C
T
R
Reset Temperature
125
o
C
(*) The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin. @NOTE = () Status determination > 100
s after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
o
C. When the
temperature returns to about 125
o
C the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
-
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to power GND).
The undervoltage shutdown level is increased by
V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN02NSP/VN02NPT
4/10
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