VN05NSP
HIGH SIDE SMART POWER SOLID STATE RELAY
June 1998
BLOCK DIAGRAM
T YPE
V
DSS
R
DS(on)
I
OUT
V
CC
VN05NSP
60 V
0.18
13 A
26 V
s
OUTPUT CURRENT (CONTINUOUS):
13 A @ T
c
=25
o
C
s
5 V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE SHUT-DOWN
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN05NSP is a monolithic devices made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
1
10
PowerSO-10
1/9
ABSOLUTE MAXIMUM RATING
Symb ol
Parameter
Valu e
Unit
V
(BR)DSS
Drain-Source Breakdown Voltage
60
V
I
OUT
Output Current (cont.)
13
A
I
R
Reverse Output Current
-13
A
I
IN
Input Current
10
mA
-V
CC
Reverse Supply Voltage
-4
V
I
STAT
St atus Current
10
mA
V
ESD
Electrostatic Discharge (1.5 k
, 100 pF)
2000
V
P
tot
Power Dissipation at T
c
25
o
C
56
W
T
j
Junct ion Operating Temperature
-40 to 150
o
C
T
s tg
St orage Temperature
-55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VN05NSP
2/9
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resist ance Junct ion-ambient ($)
Max
2.2
50
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (V
CC
= 13 V; -40
T
j
125
o
C unless otherwise specified)
POWER
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
CC
Supply Voltage
7
26
V
R
on
On Stat e Resistance
I
OUT
= 6 A
I
OUT
= 6 A
T
j
= 25
o
C
0.36
0.18
I
S
Supply Current
Of f St ate
T
j
25
o
C
On Stat e
50
15
A
mA
SWITCHING
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
Turn-on Delay Time Of
Output Current
I
OUT
= 6 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
15
s
t
r
Rise Time O f O utput
Current
I
OUT
= 6 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
30
s
t
d(of f)
Turn-off Delay Time O f
Output Current
I
OUT
= 6 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
20
s
t
f
Fall T ime Of Output
Current
I
OUT
= 6 A Resist ive Load
Input Rise T ime < 0.1
s
T
j
= 25
o
C
10
s
(di/ dt)
on
Turn-on Current Slope
I
OUT
= 6 A
I
OUT
= I
OV
0.5
2
A/
s
A/
s
(di/dt)
off
Turn-off Current Slope
I
OUT
= 6 A
I
OUT
= I
OV
2
4
A/
s
A/
s
LOGIC INPUT
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
I L
Input Low Level
Voltage
0.8
V
V
I H
Input High Level
Voltage
2
(*)
V
V
I(hyst.)
Input Hysteresis
Voltage
0.5
V
I
IN
Input Current
V
I N
= 5 V
250
500
A
V
ICL
Input Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
6
-0. 7
V
V
PROTECTIONS AND DIAGNOSTICS
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
STAT
(
)
St atus Voltage Out put
Low
I
STAT
= 1.6 mA
0.4
V
V
USD
Under Voltage Shut
Down
6.5
V
VN05NSP
3/9
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
SCL
(
)
St atus Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
6
-0. 7
V
V
t
SC
Switch-off T ime in
Short Circuit Condition
at Start -Up
R
LOAD
< 10 m
T
c
= 25
o
C
1.5
5
ms
I
OV
Over Current
R
LOAD
< 10 m
-40 T
c
125
o
C
60
A
I
AV
Average Current in
Short Circuit
R
LOAD
< 10 m
T
c
= 85
o
C
1.4
A
I
OL
Open Load Current
Level
5
180
mA
T
TSD
Thermal Shut-down
Temperat ure
140
o
C
T
R
Reset Temperature
125
o
C
(*) The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(
) Status determination > 100
s after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates
open
circuit (no
load)
and
over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
o
C. When the
temperature returns to about 125
o
C the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
-
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to power GND).
The undervoltage shutdown level is increased by
V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN05NSP
4/9
PDF 
ZIP