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Электронный компонент: VN06

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VN06
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
September 1994
BLOCK DIAGRAM
TYPE
V
DSS
R
DS ( on)
I
n
(*)
V
C C
VN06
60 V
0.18
1.9 A
26 V
PENTAWATT
(vertical)
(*) In= Nominal current according to ISO definition for hi gh side automotive switch ( see note 1)
(#) T he maximum continuous output cur rent is the cur rent at T
c
= 85
o
C for a batter y voltage of 13 V which does not activate
sel f protection
s
MAXIMUM CONTINUOUS OUTPUT
CURRENT (#): 9 A @ T
c
= 85
o
C
s
5V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE PROTECTION
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
INDUCTIVE LOAD FAST DEMAGNETIZATION
s
VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION
The VN06 is a monolithic device made using
SGS-THOMSON
Vertical
Intelligent
Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to
V
CC
and overtemperature. Fast demagnetization
of inductive loads is archieved by negative (-18V)
load voltage at turn-off.
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical
VN06
PENTAWATT horizontal
VN06 (011Y)
PENTAWATT in-line
VN06 (012Y)
1/11
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Uni t
V
( BR)DSS
Drain-Source Breakdown Voltage
60
V
I
O UT
Output Current (cont.) at T
c
= 85
o
C
9
A
I
R
Reverse Output Current at T
c
= 85
o
C
-9
A
I
I N
I nput Current
10
mA
-V
CC
Reverse Supply Voltage
-4
V
I
STA T
St atus Current
10
mA
V
E SD
Electrost atic Discharge (1.5 k
, 100 pF)
2000
V
P
tot
Power Dissipat ion at T
c
= 85
o
C
27
W
T
j
Junction Operating Temperature
-40 to 150
o
C
T
stg
St orage Temperat ure
-55 to 150
o
C
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VN06
2/11
THERMAL DATA
R
thj-cas e
R
thj- amb
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Junct ion-ambient
Max
2.4
60
o
C/ W
o
C/ W
ELECTRICAL CHARACTERISTICS (V
CC
= 13 V; -40
T
j
125
o
C unless otherwise specified)
POWER
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
C C
Supply Voltage
5.5
13
26
V
In(*)
Nominal Current
T
c
= 85
o
C
V
DS(on )
0.5 (note 1)
1.9
A
R
on
On St ate Resist ance
I
OU T
= 1.9 A
I
OU T
= 1.9 A
T
j
= 25
o
C
0.18
0. 36
I
S
Supply Current
Of f State
T
j
25
o
C
On St ate
50
15
A
mA
V
DS(MAX)
Maximum Voltage Drop I
OU T
= 8.5 A
T
c
= 85
o
C
2. 75
V
SWITCHING
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
(^)
Turn-on Delay Time Of
Output Current
I
OU T
= 1.9 A Resist ive Load
I nput Rise Time < 0.1
s
20
s
t
r
(^)
Rise Time Of Output
Current
I
OU T
= 1.9 A Resist ive Load
I nput Rise Time < 0.1
s
20
s
t
d( off)
(^)
Turn-off Delay Time Of
Output Current
I
OU T
= 1.9 A Resist ive Load
I nput Rise Time < 0.1
s
25
s
t
f
(^)
Fall Time Of Out put
Current
I
OU T
= 1.9 A Resist ive Load
I nput Rise Time < 0.1
s
6
s
(di/dt)
on
Turn-on Current Slope
I
OU T
= 1.9 A
I
OU T
= I
OV
0.08
0.5
1
A/
s
A/
s
(di/dt)
off
Turn-off Current Slope
I
OU T
= 1.9 A
I
OU T
= I
OV
0.2
3
3
A/
s
A/
s
V
demag
I nduct ive Load Clamp
Voltage
I
OU T
= 1.9 A
L = 1 mH
-24
-18
-14
V
LOGIC INPUT
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
IL
I nput Low Level
Voltage
0.8
V
V
IH
I nput High Level
Voltage
2
(
)
V
V
I(hy st.)
I nput Hysteresis
Voltage
0.5
V
I
I N
I nput Current
V
IN
= 5 V
V
IN
= 2 V
V
IN
= 0.8 V
25
250
500
250
A
A
A
V
ICL
I nput Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
5.5
6
-0. 7
-0.3
V
V
VN06
3/11
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
STAT
St atus Voltage Output
Low
I
STAT
= 1.6 mA
0.4
V
V
US D
Under Voltage Shut
Down
5
V
V
SCL
St atus Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
6
-0. 7
V
V
I
OV
Over Current
R
LOA D
< 10 m
-40
T
c
125
o
C
60
A
I
AV
Average Current in
Short Circuit
R
LOA D
< 10 m
T
c
= 85
o
C
1.4
A
I
OL
Open Load Current
Level
5
80
180
mA
T
TS D
Thermal Shut-down
Temperature
140
o
C
T
R
Reset Temperature
125
o
C
V
OL
Open Load Voltage
Level
Of f-St ate (note 2)
2.5
3.75
5
V
t
1(on)
Open Load Filtering
Time
(note 3)
1
5
10
ms
t
1(off )
Open Load Filtering
Time
(note 3)
1
5
10
ms
t
2(off )
Open Load Filtering
Time
(note 3)
1
5
10
ms
t
povl
St atus Delay
(note 3)
5
10
s
t
pol
St atus Delay
(note 3)
50
700
s
(^) See Sw itchig Time Waveforms
(
) The V
I H
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage vi a an external resistor
cal culated to not exceed 10 mA at the i nput pin.
note 1: The Nominal Current is the current at T
c
= 85
o
C for batter y voltage of 13V which produces a voltage dr op of 0.5 V
note 2: I
OL( of f)
= ( V
CC
-V
OL
)/R
OL
( see fi gure)
note 3: t
1( on )
: minimum open load duration which accti vates the status output
t
1( of f)
: mini mum l oad recovery time whi ch desactivates the status output
t
2( of f)
: mini mum on ti me after ther mal shut down which desacti vates status output
t
po vl
t
pol
: ISO definiti on (see figur e)
Note 2 Relevant Figure
Note 3 Relevant Figure
VN06
4/11
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to V
CC
and
overtemperature. The truth table shows input,
diagnostic and
output
voltage level in normal
operation and in fault conditions.
The output
signals
are
processed
by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means
that
a disconnection
during
normal
operation, with a duration of less than 5 ms does
not
affect
the
status
output.
Equally,
any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (t
povl
)in case
of overtemperature condition and a delay (t
pol
) in
case of open load. These feature fully comply
with
International
Standard
Office
(I.S.O.)
requirement for automotive High Side Driver.
To protect the device
against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off
at
a
minimum
junction
temperature
of 140
o
C.
When the temperature returns to 125
o
C the
switch is automatically turned on again. In short
circuit the protection reacts
with
virtually no
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads,
an
internal function of the
device ensures the fast demagnetization with a
typical voltage (V
demag
) of -18V.
This function allows to greatly reduce the power
dissipation according to the formula:
P
dem
= 0.5
L
load
(I
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequency and
V
demag
= demagnetization voltage
Based on this formula it is possible
to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
current for a fixed V
CC
, V
demag
and f.
PROTECTING
THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5
The device is able to withstand the test pulse
No. 5 at level II (V
s
= 46.5V) according to the
ISO
T/R 7637/1
without
any
external
component. This means that all functions of the
device
are
performed
as
designed
after
exposure to disturbance at level II. The VN06 is
able to withstand the test pulse No.5 at level III
adding an external resistor of 150 ohm between
pin 1 and ground plus a filter capacitor of 1000
F between pin 3 and ground (if R
LOAD
20
).
PROTECTING
THE
DEVICE
AGAINST
REVERSE
BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1(GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa-
sed by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
ih
, V
il
and V
stat
. This
solution allows the use of a standard diode.
Switching Time Waveforms
VN06
5/11