VN16BSP
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
March 1998
BLOCK DIAGRAM
T YPE
V
DSS
R
DS(on
)
I
OUT
V
CC
VN16BSP
40 V
0.06
5.6 A
26 V
s
MAXIMUM CONTINUOUS OUTPUT
CURRENT :20A @ T
c
= 85
o
C
s
5V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE PROTECTION
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
INDUCTIVE LOAD FAST
DEMAGNETIZATION
s
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN16BSP is a monolithic device made using
SGS-THOMSON
Vertical
Intelligent
Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to
V
CC
and overtemperature.
1
10
PowerSO-10
Fast demagnetization of
inductive loads
is
archivied by negative (-18V) load voltage at
turn-off
1/9
ABSOLUTE MAXIMUM RATING
Symb ol
Parameter
Value
Uni t
V
(BR)DSS
Drain-Source Breakdown Voltage
40
V
I
OUT
Output Current (cont.) at T
c
= 85
o
C
20
A
I
OUT
(RMS) RMS Out put Current at T
c
= 85
o
C
20
A
I
R
Reverse Output Current at T
c
= 85
o
C (f > 1Hz)
-20
A
I
IN
Input Current
10
mA
-V
CC
Reverse Supply Voltage
-4
V
I
STAT
St atus Current
10
mA
V
ESD
Electrostatic Discharge (1.5 k
, 100 pF)
2000
V
P
tot
Power Dissipation at T
c
= 25
o
C
82
W
T
j
Junct ion Operating Temperature
-40 t o 150
o
C
T
s tg
St orage Temperature
-55 t o 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VN16BSP
2/9
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient ($)
Max
1.5
50
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (8 < V
CC
< 16 V; -40
T
j
125
o
C unless otherwise specified)
POWER
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
CC
Supply Voltage
6
13
26
V
In(*)
Nominal Current
T
c
= 85
o
C V
DS(on)
0.5 V
CC
= 13 V
5. 6
8.8
A
R
on
On Stat e Resistance
I
OUT
= In
V
CC
= 13 V
T
j
= 25
o
C
0.038
0.06
I
S
Supply Current
Of f St ate
V
CC
= 13 V
T
j
25
o
C
25
50
A
V
DS(MAX)
Maximum Volt age Drop I
OUT
= 20 A
V
CC
= 13 V T
c
= 85
o
C
1
1.8
V
R
i
Output to GND Int ernal
Impedance
T
j
= 25
o
C
5
10
20
K
SWITCHING
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
(^)
Turn-on Delay Time Of
Output Current
R
load
= 1.6
5
50
500
s
t
r
(^)
Rise Time O f O utput
Current
R
load
= 1.6
40
100
680
s
t
d(off )
(^)
Turn-off Delay Time O f
Output Current
R
load
= 1.6
10
100
500
s
t
f
(^)
Fall T ime Of Output
Current
R
load
= 1.6
40
100
680
s
(di/ dt)
on
Turn-on Current Slope
R
load
= 1.6
V
CC
= 13 V
0.008
0.1
A/
s
(di/dt)
off
Turn-off Current Slope
R
load
= 1.6
V
CC
= 13 V
0.008
0.1
A/
s
V
dem ag
Inductive Load Clamp
Voltage
R
load
= 1.6
L = 1 mH
-24
-18
-14
V
LOGIC INPUT
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
I L
Input Low Level
Voltage
1.5
V
V
I H
Input High Level
Voltage
3. 5
(
)
V
V
I(hyst.)
Input Hysteresis
Voltage
0. 2
1
1.5
V
I
IN
Input Current
V
I N
= 5 V
T
j
= 25
o
C
100
A
V
ICL
Input Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
5
6
-0. 7
7
V
V
VN16BSP
3/9
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
STAT
St atus Voltage Out put
Low
I
STAT
= 1.6 mA
0.4
V
V
USD
Under Voltage Shut
Down
3. 5
5
6
V
V
SCL
St atus Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
5
6
-0. 7
7
V
V
T
TSD
Thermal Shut-down
Temperat ure
140
160
180
o
C
T
SD(hys t.)
Thermal Shut-down
Hysteresis
15
50
o
C
T
R
Reset Temperature
125
o
C
V
OL
Open Voltage Level
Of f-St ate (note 2)
2. 5
3.8
5
V
I
OL
Open Load Current
Level
On-Stat e
0.15
0.85
A
t
povl
St atus Delay
(note 3)
5
10
s
t
po l
St atus Delay
(note 3)
50
400
2500
s
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See Switchig Time Waveforms
(
) The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at T
c
= 85
o
C for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: I
OL(off)
= (V
CC
-V
OL
)/R
OL
(see figure)
note 3: t
po vl
t
pol
: ISO definition (see figure)
Note 2 Relevant Figure
Note 3 Relevant Figure
VN16BSP
4/9
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load in on-state, open load in
off-state,
over
temperature
conditions
and
stuck-on to V
CC
.
From the falling edge of the input signal, the
status output, initially low
to signal a fault
condition
(overtemperature
or
open
load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140
o
C. When this temperature returns to 125
o
C
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (V
demag
) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:
P
dem
= 0.5
L
load
(
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequency and
V
demag
= demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed V
CC
, V
demag
and f
according to the above formula. In this device if
the GND pin is disconnected, with V
CC
not
exceeding 16V, it will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE
BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa-
sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of V
ih
, V
il
and V
stat
. This
solution allows the use of a standard diode.
Switching Time Waveforms
VN16BSP
5/9
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