November 2002
1/20
VN771K
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H BRIDGE CONFIGURATIONS
(*) Total resistance of one side in bridge configuration
(**) Typical current limitation value
s
SUITED AS LOW VOLTAGE BRIDGE
s
LINEAR CURRENT LIMITATION
s
VERY LOW STAND-BY POWER DISSIPATION
s
SHORT CIRCUIT PROTECTED
s
STATUS FLAG DIAGNOSTIC (OPEN DRAIN)
s
INTEGRATED CLAMPING CIRCUITS
s
UNDERVOLTAGE PROTECTION
s
ESD PROTECTION
DESCRIPTION
The VN771K is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using
|
STMicroelectronics
VIPower
TM
M0-3 Technology. This device is
suitable to drive a DC motor in a bridge
configuration as well as to be used as a quad
switch for any low voltage application. The dual
high side switches have built-in thermal shutdown
to protect the chips from overtemperature and
current limiter blocks to protect the device from
short circuit. Status output is provided to indicate
open load in off and on state and overtemperature.
The low side switches are two OMNIFET II types
(fully autoprotected Power MOSFET in VIPowerTM
technology). They have built-in thermal shutdown,
linear current limitation and overvoltage clamping.
Fault feedback for thermal intervention can be
detected by monitoring the voltage at the input pin.
TYPE
R
DS(on)
I
OUT
V
CC
VN771K
95 m
(*)
9A (**)
36V
PIN FUNCTION
No
NAME
FUNCTION
1, 3, 25, 28
DRAIN 3
Drain of Switch 3 (low-side switch)
2
INPUT 3
Input of Switch 3 (low-side switch)
4, 11
N.C.
Not Connected
5, 10, 19, 24
V
CC
Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage
6
GND
Ground of Switches 1 and 2 (high-side switches)
7
INPUT 1
Input of Switch 1 (high-side switches)
8
DIAGNOSTIC
Diagnostic of Switches 1 and 2 (high-side switches)
9
INPUT 2
Input of Switch 2 (high-side switch)
12, 14, 15, 18 DRAIN 4
Drain of switch 4 (low-side switch)
13
INPUT 4
Input of Switch 4 (low-side switch)
16, 17
SOURCE 4
Source of Switch 4 (low-side switch)
20, 21
SOURCE 2
Source of Switch 2 (high-side switch)
22, 23
SOURCE 1
Source of Switch 1 (high-side switch)
26, 27
SOURCE 3
Source of Switch 3 (low-side switch)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VN771K
VN771K13TR
3/20
VN771K
CONNECTION DIAGRAM
THERMAL DATA
Symbol
Parameter
Value
Unit
R
thj-case
Thermal Resistance Junction-case
(High-side switch)
MAX
20
C/W
R
thj-case
Thermal Resistance Junction-case
(Low-side switch)
MAX
20
C/W
R
thj-amb
Thermal Resistance Junction-ambient
MAX
60
C/W
ABSOLUTE MAXIMUM RATING
DUAL HIGH SIDE SWITCH
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
41
V
- V
CC
Reverse DC Supply Voltage
- 0.3
V
- I
GND
DC Reverse Ground Pin Current
- 200
mA
I
OUT
DC Output Current
Internally Limited
A
- I
OUT
Reverse DC Output Current
- 6
A
I
IN
DC Input Current
+/- 10
mA
I
STAT
DC Status Current
+/- 10
mA
V
ESD
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
P
tot
Power Dissipation T
c
=25C
6
W
T
j
Junction Operating Temperature
Internally Limited
C
T
c
Case Operating Temperature
- 40 to 150
C
T
stg
Storage Temperature
- 55 to 150
C
4/20
VN771K
LOW SIDE SWITCH
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
IN
=0V)
Internally Clamped
V
V
IN
Input Voltage
Internally Clamped
V
I
IN
Input Current
+/-20
mA
R
IN MIN
Minimum Input Series Impedance
10
I
D
Drain Current
Internally Limited
A
I
R
Reverse DC Output Current
-15
A
V
ESD1
Electrostatic Discharge (R=1.5K
, C=100pF)
4000
V
V
ESD2
Electrostatic Discharge on output pin only (R=330
,
C=150pF)
16500
V
P
tot
Total Dissipation at T
c
=25C
6
W
T
j
Operating Junction Temperature
Internally limited
C
T
c
Case Operating Temperature
Internally limited
C
T
stg
Storage Temperature
-55 to 150
C
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH
(8V<V
CC
<36V; -40C< T
j
<150C, unless otherwise specified)
POWER OUTPUTS (Per each channel)
SWITCHING (Per each channel) (V
CC
=13V)
(*) Per device
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
(*)
Operating Supply Voltage
5.5
13
36
V
V
USD
(*)
Undervoltage Shut-down
3
4
5.5
V
V
OV
(*) Overvoltage
Shut-down
36
V
R
ON
On State Resistance
I
OUT
=2A; T
j
=25C
I
OUT
=2A; V
CC
> 8V
60
120
m
m
I
S
(*)
Supply Current
Off State; V
CC
=13V; V
IN=
V
OUT
=0V
Off State; V
CC
=13V; T
j
=25C;
V
IN=
V
OUT
=0V
On State; V
CC
=13V
12
12
5
40
25
7
A
A
mA
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=36V; T
j
=125C
0
50
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=125C
5
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=25C
3
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
R
L
=6.5
from V
IN
rising edge to
V
OUT
=1.3V
30
s
t
d(off)
Turn-off Delay Time
R
L
=6.5
from V
IN
falling edge to
V
OUT
=11.7V
30
s
dV
OUT
/
dt
(on)
Turn-on Voltage Slope
R
L
=6.5
from V
OUT
=1.3V to
V
OUT
=10.4V
See
relative
diagram
V/
s
dV
OUT
/
dt
(off)
Turn-off Voltage Slope
R
L
=6.5
from V
OUT
=11.7V to
V
OUT
=1.3V
See
relative
diagram
V/
s
ABSOLUTE MAXIMUM RATING (continued)
5/20
VN771K
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
LOGIC INPUT (Per each channel)
STATUS PIN (Per each channel)
PROTECTIONS (Per each channel)
OPENLOAD DETECTION (Per each channel)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Input Low Level
1.25
V
I
IL
Low Level Input Current
V
IN
= 1.25V
1
A
V
IH
Input High Level
3.25
V
I
IH
High Level Input Current
V
IN
= 3.25V
10
A
V
I(hyst)
Input Hysteresis Voltage
0.5
V
V
ICL
Input Clamp Voltage
I
IN
= 1mA
I
IN
= -1mA
6
6.8
-0.7
8
V
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
STAT
Status Low Output Voltage I
STAT
= 1.6 mA
0.5
V
I
LSTAT
Status Leakage Current
Normal Operation; V
STAT
= 5V
10
A
C
STAT
Status Pin Input
Capacitance
Normal Operation; V
STAT
= 5V
100
pF
V
SCL
Status Clamp Voltage
I
STAT
= 1mA
I
STAT
= - 1mA
6
6.8
-0.7
8
V
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T
TSD
Shut-down Temperature
150
175
200
C
T
R
Reset Temperature
135
C
T
hyst
Thermal Hysteresis
7
15
C
t
SDL
Status Delay in Overload
Conditions
T
j
>T
TSD
20
s
I
lim
Current limitation
T
j
=125
C
5.5V<V
CC
<36V
6
8.5
9
15
15
15
A
A
A
V
demag
Turn-off Output Clamp
Voltage
I
OUT
=2A; L= 6mH
V
CC
-41 V
CC
-48 V
CC
-55
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
OL
Openload ON State
Detection Threshold
V
IN
=5V 50
100
200
mA
t
DOL(on)
Openload ON State
Detection Delay
I
OUT
=0A 200
s
V
OL
Openload OFF State
Voltage Detection
Threshold
V
IN
=0V
1.5
2.5
3.5
V
T
DOL(off)
Openload Detection Delay
at Turn Off
1000
s
1
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