November 1999
1/11
1
VND05B
/
VND05B (011Y) / VND05B (012Y)
DOUBLE CHANNEL
HIGH SIDE SMART POWER SOLID STATE RELAY
1
s
OUTPUT CURRENT (CONTINUOUS): 9A AT
T
c
=85
C PER CHANNEL
s
5V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDERVOLTAGE PROTECTION
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
INDUCTIVE LOAD FAST DEMAGNETIZATION
s
VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION
The VND05B, VND05B (011Y), VND05B (012Y) is
a
monolithic
device
designed
in
STMicroelectronics VIPower technology, intended
for driving resistive or inductive loads with one
side connected to ground. This device has two
channels, and a common diagnostic. Built-in
thermal
shutdown
protects
the
chip
from
overtemperature and short circuit. The status
output provides an indication of open load in on
state, open load in off state, overtemperature
conditions and stuck-on to V
CC
.
TYPE
V
DSS
R
DS(on)
I
n
(*)
V
CC
VND05B
VND05B (011Y)
VND05B (012Y)
40V
200m
1.6A
26 V
HEPTAWATT
HEPTAWATT
HEPTAWATT
ORDER CODES
HEPTAWATT vertical
HEPTAWATT horizontal
HEPTAWATT in-line
VND05B
VND05B (011Y)
VND05B (012Y)
(vertical)
(horizontal)
(in-line)
BLOCK DIAGRAM
(*) I
n
= Nominal current according to ISO definition for high side automotive switch (see note 1)
2/11
VND05B / VND05B (011Y) / VND05B (012Y)
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM TOP VIEW
CURRENT AND VOLTAGE CONVENTIONS
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source breakdown voltage
40
V
I
OUT
Output current (continuous) at T
c
=85
C
9
A
I
OUT
(RMS)
RMS Output current at T
c
=85
C and f > 1Hz
9
A
I
R
Reverse output current at T
c
=85
C
-9
A
I
IN
Input current
+/- 10
mA
-V
CC
Reverse supply voltage
-4
V
I
STAT
Status current
+/- 10
mA
V
ESD
Electrostatic discharge (R=1.5k
, C=100pF)
2000
V
P
TOT
Power dissipation at T
c
=25
C
59
W
T
j
Junction operating temperature
-40 to 150
C
T
STG
Storage temperature
-55 to 150
C
1
3/11
VND05B / VND05B (011Y) / VND05B (012Y)
THERMAL DATA
ELECTRICAL CHARACTERISTICS (8V<V
CC
<16V; -40
C
T
j
125
C
; unless otherwise specified)
POWER
SWITCHING
LOGIC INPUT
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case
(MAX)
2.1
C/W
R
thj-amb
Thermal resistance junction-ambient
(MAX)
60
C/W
Symbol
Parameter
Test Condit ions
Min
Typ
Max
Unit
V
CC
Supply voltage
6
13
26
V
I
n
(*)
Nominal current
T
c
=85
C; V
DS(on)
0.5V; V
CC
=13V
1.6
2.6
A
R
ON
On state resistance
I
OUT
=I
n
; V
CC
=13V; T
j
=25
C
0.13
0.2
I
S
Supply current
Off state; T
j
=25
C; V
CC
=13V
35
100
A
V
DS(MAX)
Maximum voltage Drop
I
OUT
=7.5A; T
j
=85
C; V
CC
=13V
1.44
2.3
V
R
i
Output to GND internal
impedance
T
j
=25
C
5
10
20
K
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
(^)
Turn-on delay time of
output current
R
OUT
=5.4
5
25
200
s
t
r
(^)
Rise time of output current R
OUT
=5.4
10
50
180
s
t
d(off)
(^)
Turn-off delay time of
output current
R
OUT
=5.4
10
75
250
s
t
f
(^)
Fall time of output current R
OUT
=5.4
10
35
180
s
(di/dt)
on
Turn-on current slope
R
OUT
=5.4
0.003
0.1
A/
s
(di/dt)
off
Turn-off current slope
R
OUT
=5.4
0.005
0.1
A/
s
Symbol
Parameter
Test Condit ions
Min
Typ
Max
Unit
V
IL
Input low level voltage
1.5
V
V
IH
Input high level voltage
3.5
(
)
V
V
I(hyst)
Input hysteresis voltage
0.2
0.9
1.5
V
I
IN
Input current
V
IN
=5V; T
j
=25
C
30
100
A
V
ICL
Input clamp voltage
I
IN
=10mA
I
IN
=-10mA
5
6
-0.7
7
V
V
1
4/11
VND05B / VND05B (011Y) / VND05B (012Y)
ELECTRICAL CHARACTERISTICS (continued)
PROTECTIONS AND DIAGNOSTICS
(*) I
n
=Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
(
) The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
Note 1: The Nominal Current is the current at T
c
=85
C for battery voltage of 13V which produces a voltage drop of 0.5V
Note 2: I
OL(off)
= (V
CC
-V
OL
)/R
OL
Note 3: t
povl
t
pol
: ISO definition
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
STAT
Low output voltage status I
STAT
=1.6mA
0.4
V
V
USD
Undervoltage shut-down
3.5
4.5
6
V
V
SCL
Status clamp voltage
I
STAT
= 10mA
I
STAT
= -10mA
5
6
-0.7
7
V
V
T
TSD
Thermal shut-down
temperature
140
160
180
C
T
TSD(hyst)
Thermal shutdown
hysteresis temperature
50
C
T
R
Reset temperature
125
C
V
OL
Open voltage level
Off state (note 2)
2.5
4
5
V
I
OL
Open load current level
On state
5
180
mA
t
povl
Overtemperature Status
delay
(note 3)
5
10
s
t
pol
Open Load Status delay
(note 3)
50
500
2500
s
2
Note 2 Relevant Figure
Note 3 Relevant Figure
5/11
VND05B / VND05B (011Y) / VND05B (012Y)
FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in on-
state, open load in off-state, overtemperature
conditions and stuck-on to V
CC
.
From the falling edge of the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case of
overtemperature (t
povl
) and in case of open load
(t
pol
)
respectively.
This
feature
allows
to
discriminate the nature of the detected fault. To
protect
the
device
against short-circuit and
overcurrent condition, the thermal protection turns
the integrated PowerMOS off at a minimum
junction
temperature
of
140
C.
When
this
temperature returns to 125
C
the switch is
automatically turned in again. In short-circuit the
protection reacts with virtually no delay, the sensor
(one for each channel) being located inside each
of the two PowerMOS areas. This positioning
allows the device to operate with one channel in
automatic thermal cycling and the other one on a
normal load. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (V
demag
) of -18V. This
function allows to greatly reduce the power
dissipation according to the formula:
P
dem
= 0.5
L
load
(I
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f= switching frequency and
V
demag
= demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shutdown temperature in
a specified thermal environment is a function of
the load current for a fixed V
CC
, V
demag
and f
according to the above formula. In this device if the
GND pin is disconnected, with V
CC
not exceeding
16V, both channels will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across this
diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (V
il
, V
ih
thresholds and V
STAT
are increased by V
f
with
respect to power GND).
- The undervoltage shutdown level is increased by
V
f
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the device
ground (see application circuit in fig. 3), which
becomes the common signal GND for the whole
control board avoiding shift on V
il
, V
ih
and V
STAT
.
This solution allows the use of a standard diode.
Switching Time Waveforms
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