VND10B
DOUBLE CHANNEL
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
September 1994
TYPE
V
DSS
R
DS ( on)
I
n
(*)
V
C C
VND10B
40 V
0.1
3.4 A
26 V
(*) In= Nominal current according to ISO definition for hi gh side automotive switch ( see note 1)
s
OUTPUT CURRENT (CONTINUOUS):
14 A @ T
c
=85
o
C PER CHANNEL
s
5V LOGIC LEVEL COMPATIBLE INPUT
s
THERMAL SHUT-DOWN
s
UNDER VOLTAGE PROTECTION
s
OPEN DRAIN DIAGNOSTIC OUTPUT
s
INDUCTIVE LOAD FAST DEMAGNETIZATION
s
VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION
The VND10B is a monolithic device made using
SGS-THOMSON
Vertical
Intelligent
Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device
has
two channels, and
a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on
state, open load
in off
state,
overtemperature conditions and stuck-on to V
CC
.
BLOCK DIAGRAM
HEPTAWATT
(vertical)
HEPTAWATT
(horizontal)
HEPTAWATT
(in-line)
ORDER CODES:
HEPTAWATT vertical
VND10B
HEPTAWATT horizontal
VND10B (011Y)
HEPTAWATT in-line
VND10B (012Y)
1/11
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Uni t
V
( BR)DSS
Drain-Source Breakdown Voltage
40
V
I
O UT
Output Current (cont.) at T
c
= 85
o
C
14
A
I
OU T
(RMS) RMS Output Current at T
c
= 85
o
C and f > 1Hz
14
A
I
R
Reverse Output Current at T
c
= 85
o
C
-14
A
I
I N
I nput Current
10
mA
-V
CC
Reverse Supply Voltage
-4
V
I
STA T
St atus Current
10
mA
V
E SD
Electrost atic Discharge (1.5 k
, 100 pF)
2000
V
P
tot
Power Dissipat ion at T
c
= 25
o
C
75
W
T
j
Junction Operating Temperature
-40 to 150
o
C
T
stg
St orage Temperat ure
-55 to 150
o
C
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VND10B
2/11
THERMAL DATA
R
thj-cas e
R
thj- amb
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Junction-ambient
Max
1.65
60
o
C/ W
o
C/ W
ELECTRICAL CHARACTERISTICS (8 < V
CC
< 16 V; -40
T
j
125
o
C unless otherwise specified)
POWER
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
C C
Supply Voltage
6
13
26
V
In(*)
Nominal Current
T
c
= 85
o
C V
DS ( on)
0.5 V
CC
= 13 V
3.4
5.2
A
R
on
On St ate Resist ance
I
OU T
= I
n
V
CC
= 13 V
T
j
= 25
o
C
0.065
0.1
I
S
Supply Current
Of f State
T
j
= 25
o
C
V
CC
= 13 V
35
100
A
V
DS(MAX)
Maximum Voltage Drop I
OU T
= 13 A
T
j
= 85
o
C
V
CC
= 13 V
1.2
2
V
R
i
Output to GND internal
I mpedance
T
j
= 25
o
C
5
10
20
K
SWITCHING
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
(^)
Turn-on Delay Time Of
Output Current
R
out
= 2.7
5
35
200
s
t
r
(^)
Rise Time Of Output
Current
R
out
= 2.7
28
110
360
s
t
d( off)
(^)
Turn-off Delay Time Of
Output Current
R
out
= 2.7
10
140
500
s
t
f
(^)
Fall Time Of Out put
Current
R
out
= 2.7
28
75
360
s
(di/dt)
on
Turn-on Current Slope
R
out
= 2.7
0.003
0.1
A/
s
(di/dt)
off
Turn-off Current Slope
R
out
= 2.7
0.005
0.1
A/
s
LOGIC INPUT
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
IL
I nput Low Level
Voltage
1.5
V
V
IH
I nput High Level
Voltage
3.5
(
)
V
V
I(hy st.)
I nput Hysteresis
Voltage
0.2
0.9
1.5
V
I
I N
I nput Current
V
IN
= 5 V
T
j
= 25
o
C
30
100
A
V
ICL
I nput Clamp Voltage
I
IN
= 10 mA
I
IN
= -10 mA
5
6
-0. 7
7
V
V
VND10B
3/11
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
STAT
St atus Voltage Output
Low
I
STAT
= 1.6 mA
0.4
V
V
US D
Under Voltage Shut
Down
3.5
4.5
6
V
V
SCL
St atus Clamp Voltage
I
STAT
= 10 mA
I
STAT
= -10 mA
5
6
-0. 7
7
V
V
T
TS D
Thermal Shut-down
Temperature
140
160
180
o
C
T
SD( hys t. )
Thermal Shut-down
Hysteresis
50
o
C
T
R
Reset Temperature
125
o
C
V
OL
Open Volt age Level
Of f-St ate (note 2)
2.5
4
5
V
I
OL
Open Load Current
Level
On-State
0.6
0.9
1.4
A
t
povl
St atus Delay
(note 3)
5
10
s
t
pol
St atus Delay
(note 3)
50
500
2500
s
(*) In= Nominal current according to ISO definition for hi gh side automotive switch ( see note 1)
(^) See switching time waveform
(
) The V
I H
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage vi a an external resistor
cal culated to not exceed 10 mA at the i nput pin.
note 1: The Nominal Current is the current at T
c
= 85
o
C for batter y voltage of 13V which produces a voltage dr op of 0.5 V
note 2: I
OL( of f)
= ( V
CC
-V
OL
)/R
OL
note 3: t
po vl
t
pol
: ISO definiti on
Note 2 Relevant Figure
Note 3 Relevant Figure
VND10B
4/11
FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in
on-state, open load in off-state, over temperature
conditions and stuck-on to V
CC
.
From the falling edge of the input signal, the
status output, initially low
to signal a fault
condition
(overtemperature
or
open
load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140
o
C. When this temperature returns to 125
o
C
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
demag
)
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
P
dem
= 0.5
L
load
(I
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequency and
V
demag
= demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed V
CC
, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with V
CC
not
exceeding 16V, both channel will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE
BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa-
sed by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit
to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V
ih
, V
il
and
V
stat
. This solution allows the use of a standard
diode.
Switching Time Waveforms
VND10B
5/11
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