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June 2004
VND5N07/VND5N07-1
VNP5N07FI/K5N07FM
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
REV. 2
Table 1. General Features
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VND5N07, VND5N07-1, VNP5N07FI and
VNK5N07FM are monolithic devices made using
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Figure 1. Package
Table 2. Order Codes
Type
V
clamp
R
DS(on)
I
lim
VND5N07
VND5N07-1
VND5N07FI
VND5N07FM
70 V
0.2
5 A
1
3
3
2
1
1
2
3
DPAK
TO-252
IPAK
TO-251
SOT-82FM
ISOWATT220
Package
Tube
Tape and Reel
DPAK VND5N07
VND5N0713TR
IPAK VND5N07-1
ISOWATT220 VND5N07FI
SOT-82FM VND5N07FM
VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
2/15
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
Table 4. Thermal Data
Symbol
Parameter
Value
Unit
DPAK
ISOWATT220
SOT-82FM
IPAK
V
DS
Drain-Source Voltage (V
in
= 0)
Internally Clamped
V
V
in
Input Voltage
18
V
I
D
Drain Current
Internally Limited
A
I
R
Reverse DC Output Current
7
A
V
esd
Electrostatic Discharge (C = 100 pF,
R =1.5 K
)
2000
V
P
tot
Total Dissipation at T
c
= 25 C
60
24
9
W
T
j
Operating Junction Temperature
Internally Limited
C
T
c
Case Operating Temperature
Internally Limited
C
T
stg
Storage Temperature
-55 to 150
C
Symbol
Parameter
DPAK/IPAK
ISOWATT220
SOT-82FM
Unit
R
thj-case
Thermal Resistance Junction-case
Max
3.75
5.2
14
C/W
R
thj-amb
Thermal Resistance Junction-ambient
Max
100
62.5
100
C/W
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VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
ELECTRICAL CHARACTERISTICS (T
case
= 25C unless otherwise specified)
Table 5. Off
Table 6. On
(1)
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Table 7. Dynamic
Note: 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
Table 8. Switching
(3)
Note: 3. Parameters guaranteed by design/characterization.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CLAMP
Drain-source Clamp Voltage
I
D
= 200 mA; V
in
= 0
60
70
80
V
V
CLTH
Drain-source Threshold Voltage
I
D
= 2 mA; V
in
= 0
55
V
V
INCL
Input-Source Reverse Clamp
Voltage
I
in
= 1 mA
1
0.3
V
I
DSS
Zero Input Voltage Drain
Current (V
in
= 0)
V
DS
= 13 V; V
in
= 0
V
DS
= 25 V; V
in
= 0
50
200
A
A
I
ISS
Supply Current from Input Pin
V
DS
= 0 V; V
in
= 10 V
250
500
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IN(th)
Input Threshold Voltage
V
DS
= V
in
; I
D
+ I
in
= 1 mA
0.8
3
V
R
DS(on)
Static Drain-source On
Resistance
V
in
= 10 V; I
D
= 2.5 A
V
in
= 5 V; I
D
= 2.5 A
0.200
0.280
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(2)
Forward Transconductance
V
DS
= 13 V; I
D
= 2.5 A
3
4
S
C
oss
Output Capacitance
V
DS
= 13 V; f = 1 MHz; V
in
= 0
200
300
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V; I
d
= 2.5 A;
50
100
ns
t
r
Rise Time
V
gen
= 10V; R
gen
= 10
60
100
ns
t
d(off)
Turn-off Delay Time
(see Figure 28)
150
300
ns
t
f
Fall Time
40
80
ns
t
d(on)
Turn-on Delay Time
V
DD
= 15 V; I
d
= 2.5 A;
150
250
ns
t
r
Rise Time
V
gen
= 10V; R
gen
= 1000
400
600
ns
t
d(off)
Turn-off Delay Time
(see Figure 28)
3900
5000
ns
t
f
Fall Time
1100
1600
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V; I
D
= 2.5 A
V
in
= 10 V; R
gen
= 10
80
A/S
Q
i
Total Input Charge
V
DD
= 12 V; I
D
= 2.5 A; V
in
= 10 V
18
nC
VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
4/15
ELECTRICAL CHARACTERISTICS (cont'd)
Table 9. Source Drain Diode
Note: 4. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
5. Parameters guaranteed by design/characterization.
Table 10. Protection
Note: 6. Parameters guaranteed by design/characterization.
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user's standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
OVERVOLTAGE CLAMP PROTECTION:
internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input pin
voltage. When the current limiter is active, the
device operates in the linear region, so power
dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T
jsh
.
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the
chip temperature and are not dependent on the
input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150C. The device is automatically
restarted when the chip temperature falls below
135C.
STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin. The
internal protection circuit disconnects the input
from the gate and connects it instead to ground
via an equivalent resistance of 100
. The
failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit
(with a small increase in R
DS(on)
).
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(4)
Forward On Voltage
I
SD
= 2.5 A; V
in
= 0
1.6
V
t
rr
(5)
Reverse Recovery Time
I
SD
= 2.5 A; di/dt = 100 A/s
V
DD
= 30 V; T
j
= 25 C
(see test circuit, Figure 30)
150
ns
Q
rr
(5)
Reverse Recovery Charge
0.3
C
I
RRM
(5)
Reverse Recovery Current
5.7
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V; V
DS
= 13 V
V
in
= 5 V; V
DS
= 13 V
3.5
3.5
5
5
7
7
A
A
t
dlim
(6)
Step Response Current Limit
V
in
= 10 V
V
in
= 5 V
15
40
20
60
s
s
T
jsh
(6)
Overtemperature Shutdown
150
C
T
jrs
(6)
Overtemperature Reset
135
C
I
gf
(6)
Fault Sink Current
V
in
= 10 V; V
DS
= 13 V
V
in
= 5 V; V
DS
= 13 V
50
20
mA
mA
E
as
(6)
Single Pulse
Avalanche Energy
starting T
j
= 25 C; V
DD
= 20 V
V
in
= 10 V; R
gen
= 1 K
; L = 10 mH
0.2
J
5/15
VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
Figure 3. Thermal Impedance for DPAK/IPAK
Figure 4. Thermal Impedance for ISOWATT220
Figure 5. Derating Curve
Figure 6. Output Characteristics
Figure 7. Transconductance
Figure 8. Static Drain-source On Resistance vs
Input Voltage
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