June 2003
1/18
P
VNQ600
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
s
DC SHORT CIRCUIT CURRENT: 25A
s
CMOS COMPATIBLE INPUTS
s
PROPORTIONAL LOAD CURRENT SENSE
s
UNDERVOLTAGE & OVERVOLTAGE
n
SHUT-DOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUT-DOWN
s
CURRENT LIMITATION
s
VERY LOW STAND-BY POWER DISSIPATION
s
PROTECTION AGAINST:
n
LOSS OF GROUND & LOSS OF V
CC
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600 is a quad HSD formed by
assembling two VND600 chips in the same SO-28
package. The VND600 is a monolithic device
designed in
|
STMicroelectronics VIPower M0-3
Technology. The VNQ600 is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
TYPE
R
DS(on)
(*)
I
lim
V
CC
VNQ600
35m
25A
36 V
(*) Per each channel
ABSOLUTE MAXIMUM RATING
(**) See application schematic at page 9.
Symbol
Parameter
Value
Unit
V
CC
Supply voltage (continuous)
41
V
-V
CC
Reverse supply voltage (continuous)
-0.3
V
I
OUT
Output current (continuous), for each channel
15
A
I
R
Reverse output current (continuous), for each channel
-15
A
I
IN
Input current
+/- 10
mA
V
CSENSE
Current sense maximum voltage
-3
+15
V
V
I
GND
Ground current at T
pins
< 25C (continuous)
-200
mA
V
ESD
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
4000
2000
5000
5000
V
V
V
V
E
MAX
Maximum Switching Energy
(L=0.11mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150C; I
L
=40A)
126
mJ
P
tot
Power dissipation (per island) at T
lead
=25C
6.25
W
T
j
Junction operating temperature
Internally Limited
C
T
stg
Storage temperature
-55 to 150
C
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ600
VNQ60013TR
2/18
VNQ600
BLOCK DIAGRAM
LOGIC
UNDERVOLTAGE
OVERVOLTAGE
OVERTEMP. 1
OVERTEMP. 2
I
LIM2
DEMAG 2
K
I
OUT2
I
LIM1
DEMAG 1
K
I
OUT1
INPUT 1
INPUT 2
GND 1,2
V
CC
1,2
OUTPUT 1
CURRENT
SENSE 1
OUTPUT 2
CURRENT
SENSE 2
DRIVER 2
DRIVER 1
LOGIC
UNDERVOLTAGE
OVERVOLTAGE
OVERTEMP. 3
OVERTEMP. 4
I
LIM4
DEMAG 4
K
I
OUT4
I
LIM3
DEMAG 3
K
I
OUT3
INPUT 3
INPUT 4
GND 3,4
V
CC
3,4
OUTPUT 3
CURRENT
SENSE 3
OUTPUT 4
CURRENT
SENSE 4
DRIVER 4
DRIVER 3
3/18
VNQ600
CURRENT AND VOLTAGE CONVENTIONS
V
CC
1,2
GND 1,2
INPUT2
INPUT1
CURRENT
V
CC
1,2
V
CC
3,4
GND 3,4
INPUT4
INPUT3
V
CC
3,4
SENSE 1
V
CC
3,4
OUTPUT 3
OUTPUT 3
OUTPUT 3
OUTPUT 4
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 2
V
CC
1,2
OUTPUT 4
OUTPUT 4
OUTPUT 2
OUTPUT 2
CURRENT SENSE 2
CURRENT SENSE 3
CURRENT SENSE 4
1
14
15
28
CONNECTION DIAGRAM (TOP VIEW)
I
S3,4
I
GND1,2
OUTPUT3
V
CC3,4
GND
1,2
INPUT2
I
OUT3
V
CC3,4
V
OUT4
OUTPUT2
I
OUT2
V
OUT3
INPUT1
I
IN1
CUR. SENSE1
I
SENSE1
OUTPUT1
I
OUT1
OUTPUT4
I
OUT4
V
OUT2
V
OUT1
I
IN2
I
SENSE2
I
SENSE3
I
IN4
I
SENSE4
CUR. SENSE2
CUR. SENSE3
CUR. SENSE4
INPUT3
INPUT4
V
SENSE4
V
IN4
V
SENSE3
V
IN3
V
SENSE2
I
IN3
V
IN2
V
SENSE1
V
IN1
I
GND3,4
GND
3,4
I
S1,2
V
CC1,2
V
CC1,2
4/18
VNQ600
THERMAL DATA (Per island)
(*) When mounted on a standard single-sided FR-4 board with 0.5cm
2
of Cu (at least 35
m thick) connected to all V
CC
pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40
C<T
j
<150
C; unless otherwise specified)
(Per each channel)
POWER
SWITCHING (V
CC
=13V)
PROTECTIONS
(**) Per island
Symbol
Parameter
Value
Unit
R
thj-lead
Thermal resistance Junction-lead
20
C/W
R
thj-amb
Thermal resistance Junction-ambient (one chip ON)
60 (*)
C/W
R
thj-amb
Thermal Resistance Junction-ambient (two chips ON)
46 (*)
C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
(**)
Operating supply voltage
5.5
13
36
V
V
USD
(**)
Undervoltage shut-down
3
4
5.5
V
V
OV
(**)
Overvoltage shut-down
36
V
R
ON
On state resistance
I
OUT
1,2,3,4=5A; T
j
=25C
I
OUT
1,2,3,4=5A; T
j
=150C
I
OUT
1,2,3,4=3A;
V
CC
=6V
35
70
120
m
m
m
V
clamp
Clamp Voltage
I
CC
=20mA (see note 1)
41
48
55
V
I
S
(**)
Supply current
Off State; V
CC
=13V; V
IN
=V
OUT
=0V
Off State; V
CC
=13V; V
IN
=V
OUT
=0V;
T
j
=25C
On State; V
CC
=13V; V
IN
=5V;
I
OUT
=0A; R
SENSE
=3.9K
12
12
40
25
6
A
A
mA
I
L(off1)
Off state output current
V
IN
=V
OUT
=0V
0
50
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=125C
5
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=25C
3
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on delay time
R
L
=2.6
channels 1,2,3,4 (see fig. 1)
40
s
t
d(off)
Turn-off delay time
R
L
=2.6
channels 1,2,3,4 (see fig. 1)
40
s
(dV
OUT
/dt)
on
Turn-on voltage slope
R
L
=2.6
channels 1,2,3,4 (see fig. 1)
See
relative
diagram
V
/
s
(dV
OUT
/dt)
off
Turn-off voltage slope
R
L
=2.6
channels 1,2,3,4 (see fig. 1)
See
relative
diagram
V
/
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
lim
DC Short circuit current
V
CC
=13V
5.5V<V
CC
<36V
25
40
70
70
A
A
T
TSD
Thermal shut-down
temperature
150
175
200
C
T
R
Thermal reset temperature
135
C
T
hyst
Thermal hysteresis
7
15
C
V
demag
Turn-off output voltage clamp I
OUT
=2A; L=6mH
V
CC
-41 V
CC
-48 V
CC
-55
V
V
ON
Output voltage drop limitation I
OUT
=0.5A; T
j
= -40C...+150C
50
mV
1
5/18
VNQ600
CURRENT SENSE
(9V< V
CC
< 16V) (See Fig. 3)
LOGIC INPUT
Note 1: V
clamp
and V
OV
are correlated. Typical difference is 5V.
Note 2: current sense signal delay after positive input slope.
Note: Sense pin doesn't have to be left floating.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
K
1
I
OUT
/I
SENSE
I
OUT1,2
=0.35A; V
SENSE
=0.5V;
T
j
= -40C...+150C
3300
4350
6000
dK
1
/K
1
Current Sense Ratio Drift
I
OUT1
or I
OUT2
=0.5A;
V
SENSE
=0.5V; other channels
open; T
j
= -40C...150C
-10
+10
%
K
2
I
OUT
/I
SENSE
I
OUT
=2A; V
SENSE
=2.5V; T
j
=-40C
T
j
= 25C...+150C
3900
4150
4850
4850
6000
5800
dK
2
/K
2
Current Sense Ratio Drift
I
OUT1
or I
OUT2
=5A; V
SENSE
=4V;
other channels open;
T
j
=-40C...150C
-6
+6
%
K
3
I
OUT
/I
SENSE
I
OUT
=4A; V
SENSE
=4V; T
j
=-40C
T
j
= 25C...+150C
4150
4400
4900
4900
6000
5750
dK
3
/K
3
Current Sense Ratio Drift
I
OUT1
or I
OUT2
=15A; V
SENSE
=4V;
other channels open;
T
j
=-40C...150C
-6
+6
%
V
SENSE1,2
Max analog sense output
voltage
V
CC
=5.5V; I
OUT1,2
=2A;
R
SENSE
=10K
V
CC
>8V; I
OUT1,2
=4A;
R
SENSE
=10K
2
4
V
V
V
SENSEH
Analog sense output voltage in
overtemperature condition
V
CC
=13V; R
SENSE
=3.9K
5
V
R
VSENSEH
Analog Sense Output
Impedance in
Overtemperature Condition
V
CC
=13V; T
j
>T
TSD
; All channels
open
400
t
DSENSE
Current sense delay response to 90% I
SENSE
(see note 2)
500
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Low level input voltage
1.25
V
V
IH
High level input voltage
3.25
V
V
I(hyst)
Input hysteresis voltage
0.5
V
I
IL
Input current
V
IN
=1.5V
1
A
I
IN
Input current
V
IN
=3.5V
10
A
V
ICL
Input clamp voltage
I
IN
=1mA
I
IN
= -1mA
6
6.8
-0.7
8
V
V
2
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