July 2004
1/19
VNQ690SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
s
OUTPUT CURRENT PER CHANNEL: 10A
s
CMOS COMPATIBLE INPUTS
s
OPEN LOAD DETECTION (OFF STATE)
s
UNDERVOLTAGE & OVERVOLTAGE
n
SHUT- DOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUT-DOWN
s
CURRENT LIMITATION
s
VERY LOW STAND-BY POWER DISSIPATION
s
PROTECTION AGAINST:
n
LOSS OF GROUND & LOSS OF V
CC
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ690SP is a monolithic device made by
using
|
STMicroelectronics VIPower M0-3
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
TYPE
R
DS(on)
I
OUT
V
CC
VNQ690SP
90m
(*)
10 A
36 V
ABSOLUTE MAXIMUM RATING
(**) See application schematic at page 8
Symbol
Parameter
Value
Unit
V
CC
Supply voltage (continuous)
41
V
-V
CC
Reverse supply voltage (continuous)
-0.3
V
I
OUT
Output current (continuous), per each channel
Internally limited
A
I
R
Reverse output current (continuous), per each channel
-15
A
I
IN
Input current
+/- 10
mA
I
STAT
Status current
+/- 10
mA
I
GND
Ground current at T
C
<25
C (continuous)
-200
mA
V
ESD
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
P
tot
Power dissipation at T
C
=25
C
78
W
E
MAX
Maximum Switching Energy
(L=0.38mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150C; I
L
=14A)
53
mJ
T
j
Junction operating temperature
-40 to 150
C
T
stg
Storage temperature
-65 to 150
C
PowerSO-10
TM
1
10
(*) Per each channel
ORDER CODES
PACKAGE
TUBE
T&R
PowerSO-10
VNQ690SP
VNQ690SP13TR
Rev. 1
2/19
VNQ690SP
BLOCK DIAGRAM
UNDERVOLTAGE
OVERVOLTAGE
OVERTEMP. 1
OVERTEMP. 2
I
LIM2
DEMAG 2
I
LIM1
DEMAG 1
INPUT 1
INPUT 2
GND
V
CC
OUTPUT 1
OUTPUT 2
DRIVER 2
DRIVER 1
LOGIC
OVERTEMP. 3
OVERTEMP. 4
I
LIM4
DEMAG 4
I
LIM3
DEMAG 3
INPUT 3
INPUT 4
OUTPUT 3
OUTPUT 4
DRIVER 4
DRIVER 3
STATUS
STATUS
OPEN LOAD
OFF-STATE
CURRENT AND VOLTAGE CONVENTIONS
I
S
I
GND
V
CC
GND
INPUT 4
INPUT 3
I
OUT2
I
IN3
I
IN4
V
IN4
V
IN3
V
CC
V
OUT2
I
OUT1
V
OUT1
INPUT 1
I
IN1
INPUT 2
I
IN2
V
IN1
V
IN2
I
STAT
STATUS
V
STAT
OUTPUT 4
OUTPUT 3
I
OUT3
I
OUT4
V
OUT4
V
OUT3
OUTPUT 1
OUTPUT 2
V
F1
(*)
(*) V
Fn
= V
CCn
- V
OUTn
during reverse battery condition
3/19
VNQ690SP
CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C.
1
2
3
4
5
6
7
8
9
10
11
GND
OUTPUT 4
OUTPUT 3
OUTPUT 2
OUTPUT 1
STATUS
INPUT 4
INPUT 3
INPUT 2
INPUT 1
V
CC
THERMAL DATA
(1)
When mounted on a standard single-sided FR-4 board with 0.5cm of Cu (at least 35
m thick).
(2)
When mounted on a standard single-sided FR-4 board with 6cm of Cu (at least 35
m thick).
ELECTRICAL CHARACTERISTICS (V
CC
=6V up to 24V; -40
C<T
j
<150
C unless otherwise specified)
POWER (per each channel)
(#) Per device.
SWITCHING (V
CC
=13V)
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case (MAX) per channel
2
C/W
R
tj-amb
Thermal resistance junction-ambient (MAX)
52
(1)
37
(2)
C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
(#)
Operating supply voltage
6
13
36
V
V
USD
(#)
Undervoltage shutdown
3.5
4.6
6
V
V
UVhyst
(#)
Undervoltage hysteresis
0.2
1
V
V
OV
(#)
Overvoltage shutdown
36
V
V
OVhyst
(#)
Overvoltage hysteresis
0.25
V
I
S
(#)
Supply current
Off state; V
IN
=V
OUT
=0V; V
CC
=13.5V
Off state; V
IN
=V
OUT
=0V; V
CC
=13.5V
T
j
=25
C
On state; V
IN
=3.25V; 9V<V
CC
<18V
12
12
6
40
25
12
A
A
mA
R
ON
On state resistance
I
OUT
=1A; T
j
=25
C; 9V<V
CC
<18V
I
OUT
=1A, T
j
=150
C; 9V<V
CC
<18V
90
180
m
m
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V
0
50
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125C
5
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25C
3
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on delay time
R
L
=13
channels 1,2,3,4
30
s
t
d(off)
Turn-off delay time
R
L
=13
channels 1,2,3,4
30
s
dV
OUT
/dt
(on)
Turn-on voltage slope
R
L
=13
channels 1,2,3,4
See
relative
diagram
V
/
s
dV
OUT
/dt
(off)
Turn-off voltage slope
R
L
=13
channels 1,2,3,4
See
relative
diagram
V
/
s
Connection / Pin
Status
N.C.
Output
Input
Floating
X
X
X
X
To Ground
X
Through 10K
resistor
PINS
4/19
VNQ690SP
ELECTRICAL CHARACTERISTICS (continued)
PROTECTIONS (per each channel) (see note 1)
Note 1: To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
LOGIC INPUT (per each channel)
OPENLOAD DETECTION (off state) per each channel
VCC - OUTPUT DIODE
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T
TSD
Shutdown temperature
150
170
200
C
T
R
Reset temperature
135
C
T
hyst
Thermal hysteresis
7
15
25
C
I
LIM
DC Short circuit current
9V<V
CC
<36V
6V<V
CC
<36V
10
14
20
20
A
A
V
demag
Turn-off output voltage
clamp
I
OUT
=2A; V
IN
=0V; L=6mH
V
CC
-41 V
CC
-48 V
CC
-55
V
V
STAT
Status low output
voltage
I
STAT
=1.6mA
0.5
V
I
LSTAT
Status leakage current
Normal operation; V
STAT
=5V
10
A
C
STAT
Status pin input
capacitance
Normal operation; V
STAT
=5V
25
pF
V
SCL
Status clamp voltage
I
STAT
=1mA
I
STAT
=-1mA
6
6.8
-0.7
8
V
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Input Low Level Voltage
1.25
V
V
IH
Input High Level Voltage
3.25
V
V
HYST
Input Hysteresis Voltage
0.5
V
I
IH
Input high level voltage
V
IN
=3.25V
10
A
I
IL
Input Current
V
IN
=1.25V
1
A
V
ICL
Input Clamp Voltage
I
IN
=1mA
I
IN
=-1mA
6
6.8
-0.7
8
V
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
SDL
Status Delay
See Figure 1 (Openload detection
reading must be performed after
T
DOL
).
20
s
V
OL
Openload Voltage
Detection Threshold
V
IN
=0V
1.5
2.5
3.5
V
T
DOL
Openload Detection Delay
at Turn Off
V
CC
=18V (*)
300
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
F
Forward on Voltage
-I
OUT
=0.9A; T
j
=150C
0.6
V
5/19
VNQ690SP
ELECTRICAL TRANSIENT REQUIREMENTS
SWITCHING CHARACTERISTICS
ISO T/R 7637/1
Test Pulse
TEST LEVELS
I
II
III
IV
Delays and
Impedance
1
-25 V
-50 V
-75 V
-100 V
2 ms 10
2
+25 V
+50 V
+75 V
+100 V
0.2 ms 10
3a
-25 V
-50 V
-100 V
-150 V
0.1
s 50
3b
+25 V
+50 V
+75 V
+100 V
0.1
s 50
4
-4 V
-5 V
-6 V
-7 V
100 ms, 0.01
ISO T/R
7637/1
Test Pulse
Test Levels Result
I
II
III
IV
1
C
C
C
C
2
C
C
C
C
3a
C
C
C
C
3b
C
C
C
C
4
C
C
C
C
5
C
E
E
E
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
1
t
t
V
LOAD
V
IN
80%
10%
dV
OUT
/dt
(on)
t
d(off)
90%
dV
OUT
/dt
(off)
t
d(on)
t
r
PDF 
ZIP