M
July 2004
1/21
VNQ810M
QUAD CHANNEL HIGH SIDE DRIVER
s
CMOS COMPATIBLE INPUTS
s
OPEN DRAIN STATUS OUTPUTS
s
ON STATE OPEN LOAD DETECTION
s
OFF STATE OPEN LOAD DETECTION
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
PROTECTION
AGAINST
LOSS OF GROUND
s
VERY LOW STAND-BY CURRENT
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ810M is a quad HSD formed by
assembling two VND810M chips in the same SO-
28 package. The VND810M is a monolithic device
made by using
STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
current limitation threshold is aimed at detecting
the 21W/12V standard bulb as an overload fault.
The device detects open load condition both in on
and off state . Output shorted to V
CC
is detected
in the off state. Device automatically turns off in
case of ground pin disconnection.
TYPE
R
DS(on)
I
OUT
V
CC
VNQ810M
150 m
(*)
0.6 A (*)
36 V
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ810M
VNQ810M13TR
(*)
Per each channel
ABSOLUTE MAXIMUM RATING
(**) See application schematic at page 9
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
41
V
- V
CC
Reverse DC Supply Voltage
-0.3
V
- I
gnd
DC Reverse Ground Pin Current
-200
mA
I
OUT
DC Output Current
Internally Limited
A
- I
OUT
Reverse DC Output Current
-6
A
I
IN
DC Input Current
+/- 10
mA
I
STAT
DC Status Current
+/- 10
mA
V
ESD
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
E
MAX
Maximum Switching Energy
(L=310mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150C; I
L
=0.9A)
174
mJ
P
tot
Power dissipation (per island) at T
lead
=25C
6.25
W
T
j
Junction Operating Temperature
Internally Limited
C
T
stg
Storage Temperature
-55 to 150
C
Rev. 1
2/21
VNQ810M
BLOCK DIAGRAM
OVERTEMP. 1
V
CC1,2
GND1,2
INPUT1
OUTPUT1
OVERVOLTAGE
LOGIC
DRIVER 1
STATUS1
V
cc
CLAMP
UNDERVOLTAGE
CLAMP 1
OPENLOAD ON 1
CURRENT LIMITER 1
OPENLOAD OFF 1
OUTPUT2
DRIVER 2
CLAMP 2
OPENLOAD ON 2
OPENLOAD OFF 2
OVERTEMP. 2
INPUT2
STATUS2
CURRENT LIMITER 2
OVERTEMP. 3
V
CC3,4
GND3,4
INPUT3
OUTPUT3
OVERVOLTAGE
LOGIC
DRIVER 3
STATUS3
V
cc
CLAMP
UNDERVOLTAGE
CLAMP 3
OPENLOAD ON 3
CURRENT LIMITER 3
OPENLOAD OFF 3
OUTPUT4
DRIVER 4
CLAMP 4
OPENLOAD ON 4
OPENLOAD OFF 4
OVERTEMP. 4
INPUT4
STATUS4
CURRENT LIMITER 4
3/21
VNQ810M
CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C.
CURRENT AND VOLTAGE CONVENTIONS
V
CC
1,2
GND 1,2
INPUT1
STATUS1
STATUS2
V
CC
1,2
V
CC
3,4
GND 3,4
INPUT3
STATUS3
V
CC
3,4
V
CC
3,4
OUTPUT4
OUTPUT4
OUTPUT4
OUTPUT3
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT1
V
CC
1,2
OUTPUT3
OUTPUT3
OUTPUT1
OUTPUT1
INPUT2
STATUS4
INPUT4
1
14
15
28
I
S1,2
I
GND1,2
OUTPUT3
V
CC1,2
GND
1,2
INPUT2
I
OUT3
V
CC1,2
V
OUT4
OUTPUT2
I
OUT2
V
OUT3
INPUT1
I
IN1
STATUS1
I
STAT1
OUTPUT1
I
OUT1
OUTPUT4
I
OUT4
V
OUT2
V
OUT1
I
IN2
I
STAT2
I
STAT3
I
IN4
I
STAT4
STATUS2
STATUS3
STATUS4
INPUT3
INPUT4
V
STAT4
V
IN4
V
STAT3
V
IN3
V
STAT2
I
IN3
V
IN2
V
STAT1
V
IN1
I
GND3,4
GND
3,4
I
S3,4
V
CC3,4
V
CC3,4
V
F1
(*)
(*) V
Fn
= V
CCn
- V
OUTn
during reverse battery condition
PINS
Connection / Pin
Status
N.C.
Output
Input
Floating
X
X
X
X
To Ground
X
Through 10K
resistor
4/21
VNQ810M
THERMAL DATA (Per island)
(1)
When mounted on a standard single-sided FR-4 board with 0.5cm
2
of Cu (at least 35
m thick) connected to all V
CC
pins.
Horizontal mounting and no artificial air flow.
(2)
When mounted on a standard single-sided FR-4 board with 6cm
2
of Cu (at least 35
m thick) connected to all V
CC
pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40C< T
j
<150C, unless otherwise specified)
POWER OUTPUTS (Per each channel)
SWITCHING (Per each Channel) (V
CC
=13V)
LOGIC INPUT (Per each channel)
(**) Per island
Symbol
Parameter
Value
Unit
R
thj-lead
Thermal Resistance Junction-lead per chip
20
C/W
R
thj-amb
Thermal Resistance Junction-ambient (one chip ON)
60
(1)
44
(2)
C/W
R
thj-amb
Thermal Resistance Junction-ambient (two chips ON)
46
(1)
31
(2)
C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
(**)
Operating Supply Voltage
5.5
13
36
V
V
USD
(**)
Undervoltage Shut-down
3
4
5.5
V
V
OV
(**)
Overvoltage Shut-down
36
V
R
ON
On State Resistance
I
OUT
=0.5A; T
j
=25C
I
OUT
=0.5A; V
CC
> 8V
150
300
m
m
I
S
(**)
Supply Current
Off State; V
CC
=13V; V
IN
=V
OUT
=0V
Off State; V
CC
=13V; V
IN
=V
OUT
=0V;
T
j
=25C
On State; V
CC
=13V; V
IN
=5V; I
OUT
=0A
12
12
5
40
25
7
A
A
mA
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V
0
50
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125C
5
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25C
3
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
R
L
=26
from V
IN
rising edge to V
OUT
=1.3V
30
s
t
d(off)
Turn-off Delay Time
R
L
=26
from V
IN
falling edge to
V
OUT
=11.7V
30
s
dV
OUT
/dt
(on)
Turn-on Voltage Slope
R
L
=26
from V
OUT
=1.3V to V
OUT
=10.4V
See
relative
diagram
V/
s
dV
OUT
/dt
(off)
Turn-off Voltage Slope
R
L
=26
from V
OUT
=11.7V to V
OUT
=1.3V
See
relative
diagram
V/
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Input Low Level
1.25
V
I
IL
Low Level Input Current
V
IN
= 1.25V
1
A
V
IH
Input High Level
3.25
V
I
IH
High Level Input Current
V
IN
= 3.25V
10
A
V
I(hyst)
Input Hysteresis Voltage
0.5
V
V
ICL
Input Clamp Voltage
I
IN
= 1mA
I
IN
= -1mA
6
6.8
-0.7
8
V
V
1
5/21
VNQ810M
ELECTRICAL CHARACTERISTICS (continued)
V
CC
- OUTPUT DIODE
STATUS PIN (Per each channel)
PROTECTIONS (Per each channel) (see note 1)
Note 1: To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used
together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
OPENLOAD DETECTION (per each channel)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
F
Forward on Voltage
-I
OUT
=0.53A; T
j
=150C
0.6
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
STAT
Status Low Output Voltage I
STAT
= 1.6 mA
0.5
V
I
LSTAT
Status Leakage Current
Normal Operation; V
STAT
= 5V
10
A
C
STAT
Status Pin Input
Capacitance
Normal Operation; V
STAT
= 5V
100
pF
V
SCL
Status Clamp Voltage
I
STAT
=1mA
I
STAT
=-1mA
6
6.8
-0.7
8
V
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T
TSD
Shut-down Temperature
150
175
200
C
T
R
Reset Temperature
135
C
T
hyst
Thermal Hysteresis
7
15
C
t
SDL
Status Delay in Overload
Conditions
T
j
>T
TSD
20
s
I
lim
Current limitation
5.5V < V
CC
< 36V
0.7
0.9
1.4
1.4
A
A
V
demag
Turn-off Output Clamp
Voltage
I
OUT
=0.5A
V
CC
-41 V
CC
-48 V
CC
-55
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
OL
Openload ON State
Detection Threshold
V
IN
=5V 20
40
80
mA
t
DOL(on)
Openload ON State
Detection Delay
I
OUT
=0A 200
s
V
OL
Openload OFF State
Voltage Detection
Threshold
V
IN
=0V
1.5
2.5
3.5
V
t
DOL(off)
Openload Detection Delay
at Turn Off
1000
s
2
V
INn
V
STATn
t
DOL(off)
OPENLOAD STATUS TIMING (with external pull-up)
V
INn
V
STATn
OVERTEMP STATUS TIMING
t
SDL
t
SDL
I
OUT
< I
OL
V
OUT
> V
OL
t
DOL(on)
T
j
> T
TSD
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