February 2003
1/18
VND1NV04
/
VNN1NV04 / VNS1NV04
"OMNIFET II":
FULLY AUTOPROTECTED POWER MOSFET
n
LINEAR CURRENT LIMITATION
n
THERMAL SHUT DOWN
n
SHORT CIRCUIT PROTECTION
n
INTEGRATED CLAMP
n
LOW CURRENT DRAWN FROM INPUT PIN
n
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n
ESD PROTECTION
n
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
TYPE
R
DS(on)
I
lim
V
clamp
VND1NV04
VNN1NV04
VNS1NV04
250 m
1.7 A
40 V
SOT-223
SO-8
1
2
2
3
ORDER CODES:
SOT-223
VNN1NV04
SO-8
VNS1NV04
1
3
TO-252 (DPAK)
TO-252 (DPAK)
VND1NV04
BLOCK DIAGRAM
Overvoltage
Gate
Linear
DRAIN
SOURCE
Clamp
1
2
3
Current
Limiter
Control
Over
Temperature
INPUT
FC01000
2/18
VND1NV04 / VNN1NV04 / VNS1NV04
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM (TOP VIEW)
Symbol
Parameter
Value
Unit
SOT-223
SO-8
DPAK
V
DS
Drain-source Voltage (V
IN
=0V)
Internally Clamped
V
V
IN
Input Voltage
Internally Clamped
V
I
IN
Input Current
+/-20
mA
R
IN MIN
Minimum Input Series Impedance
330
I
D
Drain Current
Internally Limited
A
I
R
Reverse DC Output Current
-3
A
V
ESD1
Electrostatic Discharge (R=1.5K
, C=100pF)
4000
V
V
ESD2
Electrostatic Discharge on output pin only
(R=330
, C=150pF)
16500
V
P
tot
Total Dissipation at T
c
=25C
7
8.3
35
W
T
j
Operating Junction Temperature
Internally limited
C
T
c
Case Operating Temperature
Internally limited
C
T
stg
Storage Temperature
-55 to 150
C
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
CURRENT AND VOLTAGE CONVENTIONS
(*) For the pins configuration related to SOT-223 and DPAK see outline at page 1.
DRAIN
DRAIN
DRAIN
DRAIN
INPUT
SOURCE
SOURCE
SOURCE
1
4
5
8
SO-8 Package (*)
3/18
VND1NV04 / VNN1NV04 / VNS1NV04
THERMAL DATA
(*)
When mounted on a standard single-sided FR4 board with 50mm
2
of Cu (at least 35
m thick) connected to all DRAIN pins.
ON
Symbol
Parameter
Value
Unit
SOT-223
SO-8
DPAK
R
thj-case
Thermal Resistance Junction-case
}}}
MAX
18
3.5
C/W
R
thj-lead
Thermal Resistance Junction-lead
MAX
15
C/W
R
thj-amb
Thermal Resistance Junction-ambient
MAX
70 (*)
65(*)
54 (*)
C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CLAMP
Drain-source Clamp
Voltage
V
IN
=0V; I
D
=0.5A 40
45
55
V
V
CLTH
Drain-source Clamp
Threshold Voltage
V
IN
=0V; I
D
=2mA 36
V
V
INTH
Input Threshold Voltage
V
DS
=V
IN
; I
D
=1mA
0.5
2.5
V
I
ISS
Supply Current from Input
Pin
V
DS
=0V; V
IN
=5V 100
150
A
V
INCL
Input-Source Clamp
Voltage
I
IN
=1mA
I
IN
=-1mA
6
-1.0
6.8
8
-0.3
V
I
DSS
Zero Input Voltage Drain
Current (V
IN
=0V)
V
DS
=13V; V
IN
=0V; T
j
=25C
V
DS
=25V; V
IN
=0V
30
75
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
R
DS(on)
Static Drain-source On
Resistance
V
IN
=5V; I
D
=0.5A; T
j
=25C
V
IN
=5V; I
D
=0.5A
250
500
m
ELECTRICAL CHARACTERISTICS (-40C < T
j
< 150C, unless otherwise specified)
OFF
1
4/18
VND1NV04 / VNN1NV04 / VNS1NV04
ELECTRICAL CHARACTERISTICS (continued) (T
j
=25C, unless otherwise specified)
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40C < T
j
< 150C, unless otherwise specified)
(**) Pulsed: Pulse duration = 300
s, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
(**)
Forward
Transconductance
V
DD
=13V; I
D
=0.5A
2
S
C
OSS
Output Capacitance
V
DS
=13V; f=1MHz; V
IN
=0V 90
pF
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
V
DD
=15V; I
D
=0.5A
V
gen
=5V; R
gen
=R
IN MIN
=330
(see figure 1)
70
200
ns
t
r
Rise Time
170
500
ns
t
d(off)
Turn-off Delay Time
350
1000
ns
t
f
Fall Time
200
600
ns
t
d(on)
Turn-on Delay Time
V
DD
=15V; I
D
=0.5A
V
gen
=5V; R
gen
=2.2K
(see figure 1)
0.25
1.0
s
t
r
Rise Time
1.3
4.0
s
t
d(off)
Turn-off Delay Time
1.8
5.5
s
t
f
Fall Time
1.2
4.0
s
(dI/dt)
on
Turn-on Current Slope
V
DD
=15V; I
D
=1.5A
V
gen
=5V; R
gen
=R
IN MIN
=330
5.0
A/
s
Q
i
Total Input Charge
V
DD
=12V; I
D
=0.5A; V
IN
=5V
I
gen
=2.13mA (see figure 5)
5.0
nC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
SD
(*)
Forward On Voltage
I
SD
=0.5A; V
IN
=0V
0.8
V
t
rr
Reverse Recovery Time
I
SD
=0.5A; dI/dt=6A/
s
V
DD
=30V; L=200
H
(see test circuit, figure 2)
205
ns
Q
rr
Reverse
Recovery
Charge
100
C
I
RRM
Reverse
Recovery
Current
0.75
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
lim
Drain Current Limit
V
IN
=5V; V
DS
=13V 1.7
3.5
A
t
dlim
Step Response Current
Limit
V
IN
=5V; V
DS
=13V
2.0
s
T
jsh
Overtemperature
Shutdown
150
175
200
C
T
jrs
Overtemperature
Reset
135
C
I
gf
Fault Sink Current
V
IN
=5V; V
DS
=13V; T
j
=T
jsh
10
15
20
mA
E
as
Single Pulse
Avalanche Energy
Starting T
j
=25C; V
DD
=24V
V
IN
=5V; R
gen
=R
IN MIN
=330
;
L=50mH
(see figures 3 & 4)
55
mJ
2
5/18
VND1NV04 / VNN1NV04 / VNS1NV04
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 50KHz. The only difference from the user's
standpoint is that a small DC current I
ISS
(typ.
100
A) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current I
D
to I
lim
whatever the
INPUT pin voltages. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T
jsh
.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 C, a typical
value being 170 C. The device is automatically
restarted when the chip temperature falls of about
15C below shut-down temperature.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition
(T
j
> T
jsh
), the device tries to sink a diagnostic
current I
gf
through the INPUT pin in order to
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current I
gf
, the INPUT pin will fall to 0V. This
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current I
ISS
.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
6/18
VND1NV04 / VNN1NV04 / VNS1NV04
Figure 2: Test Circuit for Diode Recovery Times
L=100uH
A
B
8.5
V
DD
R
gen
FAST
DIODE
OMNIFET
A
D
I
S
330
B
OMNIFET
D
S
I
V
gen
Figure 1: Switching Time Test Circuit for Resistive Load
R
gen
V
gen
V
D
t
I
D
90%
10%
t
V
gen
t
d(on)
t
d(off)
t
f
t
r
7/18
VND1NV04 / VNN1NV04 / VNS1NV04
GEN
ND8003
V
IN
Figure 3: Unclamped Inductive Load Test Circuits
Figure 5: Input Charge Test Circuit
Figure 4: Unclamped Inductive Waveforms
R
GEN
P
W
V
IN
Figure 6: Thermal Impedance for SOT-223
Figure 7: Thermal Impedance for DPAK/IPAK
8/18
VND1NV04 / VNN1NV04 / VNS1NV04
1
1
Source-Drain Diode Forward Characteristics
Derating Curve
Static Drain Source On Resistance
Static Drain-Source On resistance Vs. Input
Voltage
Transconductance
Static Drain-Source On resistance Vs. Input
Voltage
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
Id(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gfs (S)
Vds=13V
Tj=25C
Tj=150C
Tj=-40C
3
3.5
4
4.5
5
5.5
6
6.5
7
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Id=0.5A
Tj=150C
Tj=-40C
Tj=25C
3
3.5
4
4.5
5
5.5
6
6.5
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Id=1.5A
Id=1A
Tj=25C
Tj=150C
Tj=-40C
0
2
4
6
8
10
12
14
Id (A)
700
750
800
850
900
950
1000
Vsd (mV)
Vin=0V
0
0.05
0.1
0.15
0.2
0.25
0.3
Id(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Rds(on) (ohms)
Tj=25C
Tj=150C
Tj=-40C
Vin=2.5V
9/18
VND1NV04 / VNN1NV04 / VNS1NV04
Static Drain-Source On Resistance Vs. Id
Turn On Current Slope
Transfer Characteristics
Turn On Current Slope
Input Voltage Vs. Input Charge
Turn off drain source voltage slope
0
500
1000
1500
2000
2500
Rg(ohm)
0
1
2
3
4
5
6
di/dt(A/us)
Vin=5V
Vdd=15V
Id=1.5A
0
500
1000
1500
2000
2500
Rg(ohm)
0.2
0.4
0.6
0.8
1
1.2
1.4
di/dt(A/us)
Vin=3.5V
Vdd=15V
Id=1.5A
0
1
2
3
4
5
6
Qg (nC)
0
1
2
3
4
5
6
Vin (V)
Vds=12V
Id=0.5A
0
500
1000
1500
2000
2500
Rg(ohm)
0
50
100
150
200
250
300
350
dv/dt(V/us)
Vin=5V
Vdd=15V
Id=0.5A
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
Vin(V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Idon(A)
Vds=13.5V
Tj=150C
Tj=25C
Tj=-40C
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
Id(A)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Tj=25C
Tj=150C
Tj=-40C
Vin=5V
Vin=3.5V
Vin=5V
Vin=5V
Vin=3.5V
Vin=3.5V
10/18
VND1NV04 / VNN1NV04 / VNS1NV04
1
1
Turn Off Drain-Source Voltage Slope
Switching Time Resistive Load
Output Characteristics
Capacitance Variations
Switching Time Resistive Load
Normalized On Resistance Vs. Temperature
0
500
1000
1500
2000
2500
Rg(ohm)
0
50
100
150
200
250
300
350
dv/dt(V/us)
Vin=3.5V
Vdd=15V
Id=0.5A
0
5
10
15
20
25
30
35
Vds(V)
50
75
100
125
150
175
200
225
C(pF)
f=1MHz
Vin=0V
0
1
2
3
4
5
6
7
8
9
10
11
12
VDS(V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
ID(A)
Vin=3V
Vin=5.5V
Vin=3.5V
Vin=4.5V
0
250
500
750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
t(us)
Vdd=15V
Id=0.5A
Vin=5V
td(off)
td(on)
tf
tr
3.25
3.5
3.75
4
4.25
4.5
4.75
5
5.25
Vin(V)
0
50
100
150
200
250
300
350
400
450
500
550
t(ns)
Vdd=15V
Id=0.5A
Rg=330ohm
tr
td(off)
tf
td(on)
-50
-25
0
25
50
75
100
125
150
175
Tc (C)
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Rds(on) (mOhm)
Vin=5V
Id=0.5A
11/18
VND1NV04 / VNN1NV04 / VNS1NV04
Normalized Input Threshold Voltage Vs.
Temperature
Step Response Current Limit
Normalized Current Limit Vs. Junction
Temperature
5
10
15
20
25
30
35
Vdd(V)
1.9
2
2.1
2.2
2.3
2.4
Tdlim(us)
Vin=5V
Rg=330ohm
-50
-25
0
25
50
75
100
125
150
175
Tc (C)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Vinth (V)
Vds=Vin
Id=1mA
-50
-25
0
25
50
75
100
125
150
175
Tc (C)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Ilim (A)
Vin=5V
Vds=13V
12/18
VND1NV04 / VNN1NV04 / VNS1NV04
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
1.8
0.071
B
0.6
0.7
0.85
0.024
0.027
0.033
B1
2.9
3
3.15
0.114
0.118
0.124
c
0.24
0.26
0.35
0.009
0.01
0.014
D
6.3
6.5
6.7
0.248
0.256
0.264
e
2.3
0.09
e1
4.6
0.181
E
3.3
3.5
3.7
0.13
0.138
0.146
H
6.7
7
7.3
0.264
0.276
0.287
V
10 (max)
A1
0.02
0.1
0.0008
0.004
SOT-223 MECHANICAL DATA
0046067
13/18
VND1NV04 / VNN1NV04 / VNS1NV04
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.25
0.003
0.009
a2
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
0.6
0.023
F
8 (max.)
SO-8 MECHANICAL DATA
14/18
VND1NV04 / VNN1NV04 / VNS1NV04
DIM.
mm.
MIN.
TYP
MAX.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
B
0.64
0.90
B2
5.20
5.40
C
0.45
0.60
C2
0.48
0.60
D
6.00
6.20
D1
5.1
E
6.40
6.60
E1
4.7
e
2.28
G
4.40
4.60
H
9.35
10.10
L2
0.8
L4
0.60
1.00
R
0.2
V2
0
8
Package Weight
Gr. 0.29
TO-252 (DPAK) MECHANICAL DATA
P032P
15/18
VND1NV04 / VNN1NV04 / VNS1NV04
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
C
B
All dimensions are in mm.
Base Q.ty
75
Bulk Q.ty
3000
Tube length ( 0.5)
532
A
6
B
21.3
C ( 0.1)
0.6
TAPE AND REEL SHIPMENT (suffix "13TR")
REEL DIMENSIONS
Base Q.ty
2500
Bulk Q.ty
2500
A (max)
330
B (min)
1.5
C ( 0.2)
13
F
20.2
G (+ 2 / -0)
16.4
N (min)
60
T (max)
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
All dimensions are in mm.
Tape width
W
16
Tape Hole Spacing
P0 ( 0.1)
4
Component Spacing
P
8
Hole Diameter
D ( 0.1/-0)
1.5
Hole Diameter
D1 (min)
1.5
Hole Position
F ( 0.05)
7.5
Compartment Depth
K (max)
6.5
Hole Spacing
P1 ( 0.1)
2
Top
cover
tape
End
Start
No components
No components
Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
6 . 7
3 . 0
1 . 8
1 . 6
2 . 3
2 . 3
6 . 7
16/18
VND1NV04 / VNN1NV04 / VNS1NV04
1
SOT-223 TAPE AND REEL SHIPMENT (suffix "13TR")
REEL DIMENSIONS
Base Q.ty
1000
Bulk Q.ty
1000
A (max)
330
B (min)
1.5
C ( 0.2)
13
F
20.2
G (+ 2 / -0)
12.4
N (min)
60
T (max)
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width
W
12
Tape Hole Spacing
P0 ( 0.1)
4
Component Spacing
P
8
Hole Diameter
D ( 0.1/-0)
1.5
Hole Diameter
D1 (min)
1.5
Hole Position
F ( 0.05)
5.5
Compartment Depth
K (max)
4.5
Hole Spacing
P1 ( 0.1)
2
Top
cover
tape
End
Start
No components
No components
Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
17/18
VND1NV04 / VNN1NV04 / VNS1NV04
SO-8
TUBE SHIPMENT (no suffix)
All dimensions are in mm.
Base Q.ty
100
Bulk Q.ty
2000
Tube length ( 0.5)
532
A
3.2
B
6
C ( 0.1)
0.6
TAPE AND REEL SHIPMENT (suffix "13TR")
All dimensions are in mm.
Base Q.ty
2500
Bulk Q.ty
2500
A (max)
330
B (min)
1.5
C ( 0.2)
13
F
20.2
G (+ 2 / -0)
12.4
N (min)
60
T (max)
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
All dimensions are in mm.
Tape width
W
12
Tape Hole Spacing
P0 ( 0.1)
4
Component Spacing
P
8
Hole Diameter
D ( 0.1/-0)
1.5
Hole Diameter
D1 (min)
1.5
Hole Position
F ( 0.05)
5.5
Compartment Depth
K (max)
4.5
Hole Spacing
P1 ( 0.1)
2
Top
cover
tape
End
Start
No components
No components
Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
REEL DIMENSIONS
C
B
A
18/18
VND1NV04 / VNN1NV04 / VNS1NV04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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