1
02/06/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
SOW-20
TN0604
Low Threshold
Package Options
N-Channel Enhancement-Mode
Vertical DMOS FETs
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Notes:
1. See Package Outline section for dimensions.
2. See Array section for quad pinouts.
Features
Low threshold -- 1.6V max.
High input impedance
Low input capacitance -- 140pF typical
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TO-92
S G D
BV
DSS
/
R
DS(ON)
I
D(ON)
V
GS(th)
BV
DGS
(max)
(min)
(max)
TO-92
SOW-20*
40V
0.75
4.0A
1.6V
TN0604N3
--
40V
1.0
4.0A
1.6V
--
TN0604WG
* Same as
SO-20 with 300 mil wide body.
Ordering Information
Order Number / Package
2
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
700mA
4.6A
1W
125
170
700mA
4.6A
SOW-20
Refer to Enhancement Mode MOSFET Arrays Section.
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
40
V
GS(th)
Gate Threshold Voltage
0.6
1.6
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.8
-4.5
mV/
C
V
GS
= V
DS
, I
D
= 2.5mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
1.5
2.1
V
GS
= 5V, V
DS
= 20V
4.0
7.0
V
GS
= 10V, V
DS
= 20V
R
DS(ON)
TO-92/SOW-20
1.0
1.6
V
GS
= 5V, I
D
= 0.75A
TO-92
0.6
0.75
V
GS
= 10V, I
D
= 1.5A
SOW - 20
1.0
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.5
0.75
%/
C
V
GS
= 10V, I
D
= 1.5A
G
FS
Forward Transconductance
0.5
0.8
V
DS
= 20V, I
D
= 1.5A
C
ISS
Input Capacitance
140
190
C
OSS
Common Source Output Capacitance
75
110
pF
C
RSS
Reverse Transfer Capacitance
25
50
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
6.0
t
d(OFF)
Turn-OFF Delay Time
25
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.2
1.8
V
V
GS
= 0V, I
SD
= 1.5A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 1A
Notes:
1: All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
V
V
GS
= 0V, I
D
= 2.0mA
A
Electrical Characteristics
(@ 25
C unless otherwise specified)
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
V
GS
= 0V, V
DS
= 20V
f = 1 MHz
V
DD
= 20V
ns
I
D
= 0.5A
R
GEN
= 25
TN0604
Static Drain-to-Source
ON-State Resistance
3
Typical Performance Curves
Power Dissipation vs. Case Temperature
0
150
100
50
2.0
1.0
TO-92
125
75
25
T
C
C)
(
10V
Output Characteristics
10
8
6
4
2
0
10
20
30
50
40
9V
8V
7V
6V
5V
4V
3V
V
DS
(volts)
I
(amperes)
D
Saturation Characteristics
10
8
6
4
2
0
2
4
6
10
8
4V
10V
6V
3V
5V
7V
8V
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
0.1
100
10
1
0.1
1.0
10
TO-92 (DC)
TC = 25
C
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
2.0
0
7
1
4
5
6
G
FS
(siemens)
I
D
(amperes)
TA = -55
C
TA = 25
C
T
A
= 125
C
D
P
(watts)
V
DS
V
DS
= 25V
1.0
TO-92 (pulsed)
9V
V
GS
=
0
0
0
0
0.01
0
2
3
V
GS
=
TO-92
T
C
= 25
C
P
D
= 1W
TN0604
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
02/06/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
TN0604
Gate Drive Dynamic Characteristics
10
8
6
4
2
0
1.0
2.0
3.0
5.0
4.0
170 pF
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
1.4
0.8
1.2
0.6
1.0
On-Resistance vs. Drain Current
2.0
0
10.0
1.1
1.0
0.9
-50
0
50
100
150
Transfer Characteristics
10
4
0
2
4
6
10
8
2
6
8
V
DS
= 25V
T
= -55
A
C
T
= 125
C
Capacitance vs. Drain-to-Source Voltage
200
150
100
50
0
10
20
30
40
C (picofarads)
f = 1MHz
C
OSS
C
RSS
170 pF
5.0
1.0
T
= 25
A
C
A
0
V
(th)
@ 1mA
R @ 10V, 1.5A
DS
0
0
0
C
ISS
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
T
j
(
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
V
GS
= 10V
V
GS
= 5V
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
V
GS
(volts)
I
D
(amperes)
Q
G
(nanocoulombs)
V
GS
(volts)
V
DS
(volts)
V
DS
= 10V
V
DS
= 40V
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