1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN2130
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
BV
DSS
/
R
DS(ON)
V
GS(th)
BV
DGS
(max)
(max)
TO-236AB*
Die
300V
25
2.4V
TN2130K1
TN2130ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1T
where
= 2-week alpha date code
Gate
Source
Drain
TO-236AB
(SOT-23)
top view
Low Threshold
Ordering Information
2
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
300
V
I
D
= 1mA, V
GS
= 0V
V
GS(th)
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-5.5
mV/
C
I
D
= 1mA, V
GS
= V
DS
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
100
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
250
mA
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source ON-State Resistance
25
V
GS
= 4.5V, I
D
= 120mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/
C
V
GS
= 4.5V, I
D
= 120mA
G
FS
Forward Transconductance
250
m
V
DS
= 25V, I
D
= 100mA
C
ISS
Input Capacitance
50
C
OSS
Common Source Output Capacitance
15
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
C
RSS
Reverse Transfer Capacitance
5
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
7
t
d(OFF)
Turn-OFF Delay Time
12
t
f
Fall Time
15
V
SD
Diode Forward Voltage Drop
1.8
V
I
SD
= 120mA, V
GS
= 0V
t
rr
Reverse Recovery Time
400
ns
I
SD
= 120mA, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-236AB
85mA
200mA
0.36W
200
350
85mA
200mA
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Electrical Characteristics
(@ 25
C unless otherwise specified)
Switching Waveforms and Test Circuit
V
DD
= 25V,
ns
I
D
= 120mA
R
GEN
= 25
TN2130
3
Typical Performance Curves
Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
0.5
0.4
0.3
0.2
0.1
0
2
4
6
10
8
V
DS
(volts)
I
D
(amperes)
Maximum Rated Safe Operating Area
0
1000
100
10
0.01
0.1
1.0
0.001
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1.0
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.4
0.2
0.8
0.6
0
0
0.1
0.2
G
FS
(siements)
I
D
(amperes)
V
DS
(volts)
Power Dissipation vs. Temperature
0
150
100
50
1.0
0.8
0.6
0.4
0.2
0
125
75
25
T
A
(
C)
P
D
(watts)
SOT-23 (pulsed)
V
GS
= 10V
0
0
V
GS
=10V
SOT-23 (DC)
SOT-23
0.3
0.5
0.4
2V
6V
V
DS
V
DS
= 15V
T
A
= 25
C
SOT-23
TA = 25
C
PD = 0.36W
T
A
= -55
C
25
C
125
C
2V
3V
4V
6V
8V
3V
4V
TN2130
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
TH
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
T
j
(
C)
Transfer Characteristics
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
50
C (picofarads)
I
D
(amperes)
0
10
20
30
40
25
0
0
2
4
6
8
10
-50
0
50
100
150
1.1
1.0
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
-50
0
50
100
150
28pF
V
DS
= 10V
V
DS
= 40V
V
GS
= 4.5V
V
GS
= 10V
0
0.2
0.4
0.6
1.0
0.8
f = 1MHz
0.9
80 pF
2.0
1.6
1.2
0.8
0.4
0
V
GS(th)
@ 1mA
R
DS(ON)
@ 4.5V, 120mA
0
1.0
0.8
0.6
0.4
0.2
0
T
A
= -55
C
V
DS
= 15V
125
C
Q
G
(nanocoulombs)
V
DS
(volts)
V
GS
(volts)
V
DS
= 15V
C
ISS
C
OSS
C
RSS
25
C
Typical Performance Curves
TN2130
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