1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2222
VN2224
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
* Distance of 1.6 mm from case for 10 seconds.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Note: See Package Outline section for dimensions.
1
10
2
3
4
5
6
7
8
9
20
11
19
18
17
16
15
14
13
12
top view
TO-92
S G D
20-pin Ceramic DIP
Ordering Information
Order Number / Package
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
20-Pin C-Dip
220V
1.25
5.0A
--
VN2222NC
240V
1.25
5.0A
VN2224N3
--
S
S
S
G1
G2
G3
G4
S
S
S
S
S
NC
D1
D2
D3
D4
NC
S
S
2
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
V
GS
= 0V, I
D
= 5mA
V
GS(th)
Gate Threshold Voltage
1.0
3.0
V
V
GS
= V
DS
, I
D
= 5mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4
-5
mV/
C
V
GS
= V
DS
, I
D
= 5mA
I
GSS
Gate Body Leakage
1
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
50
A
V
GS
= 0V, V
DS
= Max Rating
5
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
2
V
GS
= 5V, V
DS
= 25V
5
10
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
1.0
1.5
V
GS
= 5V, I
D
= 2A
0.9
1.25
V
GS
= 10V, I
D
= 2A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.0
1.4
%/
C
V
GS
= 10V, I
D
= 2A
G
FS
Forward Transconductance
1.0
2.2
V
DS
= 25V, I
D
= 2A
C
ISS
Input Capacitance
300
350
C
OSS
Common Source Output Capacitance
85
150
pF
C
RSS
Reverse Transfer Capacitance
20
35
t
d(ON)
Turn-ON Delay Time
6
15
t
r
Rise Time
16
25
t
d(OFF)
Turn-OFF Delay Time
65
90
t
f
Fall Time
30
60
V
SD
Diode Forward Voltage Drop
0.8
1.0
V
V
GS
= 0V, I
SD
= 100mA
t
rr
Reverse Recovery Time
500
ns
V
GS
= 0V, I
SD
= 1A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
540mA
5.0A
1.0W
125
170
540mA
5.0A
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
A
VN2222/VN2224
Static Drain-to-Source
ON-State Resistance
V
DD
= 25V
I
D
= 2A
R
GEN
= 10
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
ns
VN2224
240
VN2222
220
3
Typical Performance Curves
VN2222/VN2224
Output Characteristics
10
8
6
4
2
0
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
10
8
6
4
2
0
V
DS
(volts)
Maximum Rated Safe Operating Area
1
1000
100
10
10
1
0.1
0.01
0.001
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
5
4
3
2
1
0
0
10
5
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
10
5
0
125
75
25
T
C
(
C)
P
D
(watts)
TO-92
T
C
= 25
C
P
D
= 1W
TO-92
T
A
= -55
C
V
DS
= 25V
0
10
20
30
50
40
4V
3V
0
2
4
6
10
8
V
GS
= 10V
6V
4V
3V
T
A
= 25
C
T
A
= 125
C
V
GS
= 10V
6V
8V
8V
TO-92 (DC)
TC = 25
C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
VN2222/VN2224
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
400
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
10
20
30
40
300
200
0
0
2
4
6
8
10
10
5
-50
0
50
100
150
1.1
1.0
5
2
1.4
1.0
0.4
10
8
6
4
2
0
2
4
6
8
10
-50
0
50
100
150
300 pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55
C
V
DS
= 25V
125
C
0
2
4
6
10
8
0
3
4
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
733 pF
0.6
0.8
1.2
2.4
2.0
1.6
1.2
0.8
0.4
V
th
@ 5mA
25
C
0
100
0
1
R
DS
@ 10V, 2A
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