1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2460
Advanced DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
TO-243AA*
Die**
600V
20
0.25A
VN2460N3
VN2460N8
VN2460NW
*
Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.
** Die in wafer form.
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
TO-243AA
(SOT-89)
G
D
S
D
TO-92
S G D
Order Number / Package
Product marking for TO-243AA:
VN4F
Where
= 2-week alpha date code
2
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-243AA
0.2A
0.6A
1.6W
15
78
0.2A
0.6A
TO-92
0.16A
0.5A
1W
125
170
0.16A
0.5A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
600
V
GS(th)
Gate Threshold Voltage
1.5
V
V
GS
= V
DS
, I
D
= 2.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
-5.5
mV/
C
V
GS
= V
DS
, I
D
= 2.0mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.25
A
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
25
V
GS
= 4.5V, I
D
= 100mA
20
V
GS
= 10V, I
D
= 100mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.7
%/
C
V
GS
= 10V, I
D
= 100mA
G
FS
Forward Transconductance
50
m
V
DS
= 25V, I
D
= 100mA
C
ISS
Input Capacitance
150
C
OSS
Common Source Output Capacitance
50
pF
C
RSS
Reverse Transfer Capacitance
25
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
10
t
d(OFF)
Turn-OFF Delay Time
25
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.5
V
V
GS
= 0V, I
SD
= 400mA
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 2.0mA
ns
V
GS
= 0V, V
DS
= 25V
f = 1.0 MHz
V
DD
= 25V,
I
D
= 250mA,
R
GEN
= 25
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
VN2460
3
Typical Performance Curves
VGS = 10V
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
1.2
I D
(Amperes)
VDS (Volts)
Output Characteristics
8V
6V
5V
4V
3V
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
Saturation Characteristics
I D
(Amperes)
VDS (Volts)
VGS = 10V
8V
6V
5V
4V
3V
0.0
0.1
0.2
0.3
0.4
0.5
0.0
0.1
0.2
0.3
0.4
0.5
TA = -55
C
TA = 25
C
TA = 125
C
VDS = 25V
Transconductance vs. Drain Current
G
FS
(siemens)
ID (Amperes)
Power Dissipation vs. Case Temperature
P
D
(W
atts)
TC (
C)
0
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
25
TO-92
SOT-89
I D
(amperes)
VDS (Volts)
Maximum Rated Safe Operating Area
TO-92 (DC)
SOT-89 (DC)
SOT-89 (pulsed)
TO-92 (pulsed)
TC = 25
C
0.01
0.1
1.0
0.001
1
1000
100
10
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1.0
SOT-89
P
D
= 1.6W
T
C
= 25
C
0
t
p
(seconds)
TO-92
P
D
= 1W
T
C
= 25
C
VN2460
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
VGS = 4.5V
VGS = 10V
R
DS(ON)
(ohms)
ID (Amperes)
On Resistance vs. Drain Current
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th) @ 2mA
RDS(on) @ 10V, 0.1A
VGS(TH) and RDS(ON) w/ Temperature
V
GS(th)
(normalized)
TJ (
C)
R
DS(ON)
(normalized)
Transfer Characteristics
I D
(Amperes)
VGS (Volts)
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
VDS = 25V
TA = -55
C
TA = 125
C
TA = 25
C
BV
DSS
(Normalized)
TJ (
C)
BV
DSS
Variation with Temperature
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
Capacitance vs. Drain Source Voltage
C
(picofarads)
VDS (volts)
0
10
20
30
40
0
75
150
225
300
f = 1MHz
CISS
COSS
CRSS
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
0
1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
10
VDS=10V
VDS=40V
ID = 0.5A
VN2460
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