SUP/SUB65P06-20
Siliconix
P-39628--Rev. A, 28-Dec-94
1
P-Channel Enhancement-Mode Transistors
Product Summary
V
(BR)DSS
(V)
r
DS(on)
(
W)
I
D
(A)
60
0.020
65
a
SUP65P06 20
SUB65P06 20
DRAIN connected to TAB
S
G
D
P Channel MOSFET
TO 220AB
Top View
G D S
TO 263
S
G
Top View
D
Absolute Maximum Ratings (T
C
= 25
_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
175
_C)
T
C
= 25
_C
I
D
65
a
(T
J
= 175
_C)
T
C
= 125
_C
I
D
39
A
Pulsed Drain Current
I
DM
200
A
Avalanche Current
I
AR
60
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
180
mJ
Power Dissipation
T
C
= 25
_C (TO-220AB and TO-263)
P
D
187
d
W
Power Dissipation
T
A
= 125
_C (TO-263)
c
P
D
3.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Junction to Ambient
PCB Mount (TO-263)
c
R
thJA
40
Junction-to-Ambient
Free Air (TO-220AB)
R
thJA
62.5
_C/W
Junction-to-Case
R
thJC
0.8
Notes:
a.
Package limited.
b.
Duty cycle
v 1%.
c.
When mounted on 1" square PCB (FR-4 material).
d.
See SOA curve for voltage derating.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289.
A SPICE Model data sheet is available for this product (FaxBack document #70543).
SUP/SUB65P06-20
2
Siliconix
P-39628--Rev. A, 28-Dec-94
Specifications (T
J
= 25
_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
mA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
2.0
3.0
4.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"20 V
"100
nA
V
DS
= 60 V, V
GS
= 0 V
1
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125
_C
50
mA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175
_C
150
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
120
A
b
V
GS
= 10 V, I
D
= 30 A
0.017
0.020
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
_C
0.033
W
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
_C
0.042
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A
25
S
Dynamic
a
Input Capacitance
C
iss
4500
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
870
pF
Reversen Transfer Capacitance
C
rss
350
Total Gate Charge
c
Q
g
85
120
Gate-Source Charge
c
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 65 A
24
nC
Gate-Drain Charge
c
Q
gd
22
Turn-On Delay Time
c
t
d(on)
15
40
Rise Time
c
t
r
V
DD
= 30 V, R
L
= 0.47
W
40
80
ns
Turn-Off Delay Time
c
t
d(off)
DD
,
L
I
D
] 65 A, V
GEN
= 10 V, R
G
= 2.5
W
65
120
ns
Fall Time
c
t
f
30
60
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_C)
a
Continuous Current
I
s
65
A
Pulsed Current
I
SM
200
A
Forward Voltage
b
V
SD
I
F
= 65 A, V
GS
= 0 V
1.1
1.4
V
Reverse Recovery Time
t
rr
70
120
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 65 A, di/dt = 100 A/
ms
7
9
A
Reverse Recovery Charge
Q
rr
0.245
0.54
mC
Notes:
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
c.
Independent of operating temperature.
SUP/SUB65P06-20
Siliconix
P-39628--Rev. A, 28-Dec-94
3
Typical Characteristics (25
_C Unless Noted)
0
4
8
12
16
20
0
25
50
75
100
125
150
175
0
0.005
0.010
0.015
0.020
0.025
0.030
0
20
40
60
80
100
0
1000
2000
3000
4000
5000
6000
0
10
20
30
40
50
60
0
20
40
60
80
100
0
20
40
60
80
100
0
40
80
120
160
200
0
2
4
6
8
10
0
40
80
120
160
200
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source
V
oltage (V)
On-Resistance (
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
r
DS(on)
W
)
V
GS
V
GS
Gate-to-Source Voltage (V)
T
ransconductance
(S)
g
fs
25
_C
125
_C
6 V
T
C
= 55
_C
V
DS
= 30 V
I
D
= 65 A
V
GS
= 10, 9, 8 V
7 V
V
GS
= 10 V
V
GS
= 20 V
C
iss
C
oss
C
rss
T
C
= 55
_C
25
_C
125
_C
5 V
4 V
SUP/SUB65P06-20
4
Siliconix
P-39628--Rev. A, 28-Dec-94
Typical Characteristics (25
_C Unless Otherwise Noted)
0
0.5
1.0
1.5
2.0
2.5
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
(Normalized)
On-Resistance (
T
J
Junction Temperature (
_C)
V
SD
Source-to-Drain Voltage (V)
r
DS(on)
W
)
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 30 A
T
J
= 25
_C
T
J
= 150
_C
0.3
Thermal Ratings
0
20
40
60
80
0
25
50
75
100
125
150
175
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
5
10
4
10
3
10
2
10
1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
3
Safe Operating Area
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
Case Temperature (
_C)
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
Drain Current (A)
I
D
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
100
500
10
0.1
10
ms
100
ms
1 ms
10 ms
100 ms
dc
T
C
= 25
_C
Single Pulse
Limited by r
DS(on)
0.1
1
10
100
1
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