VN2010L/BS107
Siliconix
P-38283--
Rev. B (08/15/94)
1
N Channel Enhancement Mode MOS Transistors
Product Summary
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
V
GS(th)
(V)
I
D
(A)
VN2010L
200
10 @ V
GS
= 4.5 V
0.8 to 1.8
0.19
BS107
200
28 @ V
GS
= 2.8 V
0.8 to 3
0.12
Features
Benefits
Applications
D Low On Resistance: 6 W
D Secondary Breakdown Free: 220 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Low Offset Voltage
D Full Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High Temperature
Run Away"
D High Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO 226AA
(TO 92)
Top View
S
D
G
1
2
3
VN2010L
TO 92 18RM
(TO 18 Lead Form)
Top View
D
S
G
1
2
3
BS107
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Symbol
VN2010L
BS107
Unit
Drain Source Voltage
V
DS
200
200
V
Gate Source Voltage
V
GS
"30
"25
V
Continuous Drain Current (T
J
= 150_C)
T
A
= 25_C
I
D
0.19
0.12
A
Continuous Drain Current (T
J
= 150_C)
T
A
= 1 0 0
_C
I
D
0 . 1 2
A
P u l s e d D r a i n C u r r e n t
a
I
DM
0.8
Power Dissipation
T
A
= 25_C
P
D
0.8
0.5
W
Power Dissipation
T
A
= 100_C
P
D
0.32
W
Maximum Junction to Ambient
R
thJA
156
250
_C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
VN2010L/BS107
Siliconix
P-38283--
Rev. B (08/15/94)
2
Specifications
a
Limits
VN2010L
BS107
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 mA
220
200
200
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.2
0.8
1.8
0.8
3
V
Gate Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"10
nA
Gate Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "15 V
"10
nA
Drain Leakage Current
I
DSX
V
DS
= 70 V, V
GS
= 0.2 V
1
A
Z
G
V l
D i C
I
V
DS
= 130 V, V
GS
= 0 V
0.03
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V
1
mA
T
J
= 125_C
100
On State Drain Current
c
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
0.7
0.1
A
D i S
O R i
c
V
GS
= 2.8 V, I
D
= 0.02 A
6
28
W
Drain Source On Resistance
c
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.05 A
6
10
W
T
J
= 125_C
11
20
Forward Transconductance
c
g
fs
V
DS
= 15 V, I
D
= 0.1 A
180
125
S
Common Source
Output Conductance
c
g
os
V
DS
= 15 V, I
D
= 0.05 A
0.15
mS
Dynamic
Input Capacitance
C
iss
V
25 V V
0 V f
1 MH
35
60
F
Output Capacitance
C
oss
V
DS
=25 V, V
GS
= 0 V, f = 1 MHz
9
30
pF
Reverse Transfer Capacitance
C
rss
1
15
Switching
d
Turn On Time
t
ON
V
DD
= 25 V, R
L
= 250 W
I
D
^ 0.1 A, V
GEN
= 10 V
5
20
ns
Turn Off Time
t
OFF
I
D
^ 0.1 A, V
GEN
= 10 V
R
G
= 25 W
21
30
ns
Notes
a. T
A
= 25_C unless otherwise noted.
VNDQ20
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
VN2010L/BS107
Siliconix
P-38283--
Rev. B (08/15/94)
3
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On Resistance vs. Drain Current
Normalized On Resistance
vs. Junction Temperature
Transfer Characteristics
On Resistance vs. Gate to Source Voltage
V
GS
- Gate Source Voltage (V)
V
GS
- Gate Source Voltage (V)
- Drain Current (mA)
I
D
- Drain Current (mA)
I
D
- Drain Current (A)
I
D
- OnR
esistance (
r
DS(on)
W
)
V
DS
- Drain to Source Voltage (V)
V
DS
- Drain to Source Voltage (V)
I
D
- Drain Current (A)
T
J
- Junction Temperature (_C)
r
DS(on)
- DrainSource OnR
esistance
(Normalized)
28
0
4
8
12
16
20
24
20
16
0
12
8
4
I
D
= 500 mA
50 mA
T
J
= 25C
250 mA
12.5
10.0
7.5
0
0
0.2
1.0
5.0
2.5
0.4
0.6
0.8
V
GS
= 10 V
0.5
0
1
2
3
4
5
0.4
0.3
0.2
0.1
0
V
GS
= 10 V
5 V
4 V
3 V
2 V
6 V
T
J
= 25C
50
0
0.4
40
30
20
10
0
0.8
1.2
1.6
2.0
V
GS
= 2.2 V
2.0 V
1.8 V
1.6 V
1.4 V
0.6 V
1.2 V
1.0 V
T
J
= 25C
500
400
300
0
5
200
100
0
1
2
3
4
25C
125C
V
DS
= 15 V
T
J
= -55C
2.25
2.00
1.75
0.50
-50
-10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 4.5 V
I
D
= 50 mA
10 mA
r
DS(on)
- DrainSource OnR
esistance (
)
W
VN2010L/BS107
Siliconix
P-38283--
Rev. B (08/15/94)
4
Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd)
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction to Ambient (TO 226AA)
Gate Charge
Load Condition Effects on Switching
Normalized Effective T
ransient
Thermal Impedance
t
1
- Square Wave Pulse Duration (sec)
I
D
- Drain Current (A)
V
DS
- Drain to Source Voltage (V)
V
GS
- Gate to Source Voltage (V)
Q
g
- Total Gate Charge (pC)
- Drain Current (mA)
I
D
C - Capacitance (pF)
- GatetoSource V
oltage (V)
V
GS
10
1
0.01
0
0.4
0.1
0.8
1.2
1.6
2.0
V
DS
= 5 V
T
J
= 150C
-55C
0C
60
50
40
0
0
10
50
30
20
20
30
40
10
C
oss
C
iss
C
rss
V
GS
= 0 V
f = 1 MHz
15.0
12.5
10.0
0
0
250
1250
7.5
5.0
500
750
1000
2.5
I
D
= 0.1 A
160 V
V
DS
= 100 V
0.01
0.1
1.0
100
10
1
50
20
5
2
V
DD
= 25 V
R
G
= 25 W
V
GS
= 0 to 10 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
t
d(off)
t
d(on)
t
r
t
f
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