Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TLV2352, TLV2352Y
LinCMOS
TM
DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
SLCS011B MAY 1992 REVISED MARCH 1999
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages
2 V to 8 V
D
Fully Characterized at 3 V and 5 V
D
Very-Low Supply-Current Drain
120
A Typ at 3 V
D
Output Compatible With TTL, MOS, and
CMOS
D
Fast Response Time . . . 200 ns Typ for
TTL-Level Input Step
D
High Input Impedance . . . 10
12
Typ
D
Extremely Low Input Bias Current
5 pA Typ
D
Common-Mode Input Voltage Range
Includes Ground
D
Built-In ESD Protection
description
The TLV2352 consists of two independent,
low-power comparators specifically designed for
single power-supply applications and operates
with power-supply rails as low as 2 V. When
powered from a 3-V supply, the typical supply
current is only 120
A.
The TLV2352 is designed using the Texas Instruments LinCMOS
TM
technology and therefore features an
extremely high input impedance (typically greater than 10
12
), which allows direct interfacing with
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic
wired-AND relationships. The TLV2352I is fully characterized at 3 V and 5 V for operation from 40
C to 85
C.
The TLV2352M is fully characterized at 3 V and 5 V for operation from 55
C to 125
C.
The TLV2352 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a
1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device
as exposure to ESD may result in degradation of the device parametric performance.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIO max
at 25
C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TSSOP
(PW)
PLASTIC
DIP
(U)
CHIP
FORM
(Y)
40
C to
85
C
5 mV
TLV2352ID
--
--
TLV2352IP
TLV2352IPWLE
--
TLV2352Y
55
C to
125
C
5 mV
--
TLV2352MFK
TLV2352MJG
--
--
TLV2352MU
TLV2352Y
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLV2352IDR).
The PW packages are only available left-ended taped and reeled (e.g., TLV2352IPWLE)
These devices have limited built-in protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
Copyright
1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
OUT
IN +
IN
symbol (each comparator)
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
TLV2352, TLV2352Y
LinCMOS
TM
DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
SLCS011B MAY 1992 REVISED MARCH 1999
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
1
2
3
4
5
10
9
8
7
6
NC
1OUT
1IN
1IN +
V
DD
/GND
NC
V
DD +
2OUT
2IN
2IN +
TLV2254M
U PACKAGE
(TOP VIEW)
NC
2OUT
NC
2IN
NC
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
1IN
NC
1IN +
NC
(TOP VIEW)
NC
1OUT
NC
2IN+
NC
NC
NC
NC
V
DD+
(TOP VIEW)
1
2
3
4
8
7
6
5
1OUT
1IN
1IN +
V
DD
/GND
V
DD+
2OUT
2IN
2IN +
NC No internal connection
1
2
3
4
8
7
6
5
1OUT
1IN
1IN +
V
DD
/GND
V
DD+
2OUT
2IN
2IN +
TLV2352I . . . D OR P PACKAGE
TLV2352M . . . JG PACKAGE
(TOP VIEW)
TLV2352I . . . PW PACKAGE
TLV2352M
FK PACKAGE
V
DD
/GND
TLV2352, TLV2352Y
DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
SLCS011B MAY 1992 REVISED MARCH 1999
LinCMOS
TM
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
3
equivalent
schematic
Common
to All Channels
V
DD
GND
OUT
IN
+
IN
TLV2352, TLV2352Y
LinCMOS
TM
DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
SLCS011B MAY 1992 REVISED MARCH 1999
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLV2352Y chip information
These chips, when properly assembled, display characteristics similar to the TLV2352. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip can be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
4 MILS MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
OUT
IN +
IN
VDD
GND
(8)
(6)
(3)
(2)
(5)
(1)
+
(7)
IN +
IN
OUT
(4)
57
57
(7)
(6)
(5)
(8)
(4)
(3)
(2)
(1)
TLV2352, TLV2352Y
LinCMOS
TM
DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
SLCS011B MAY 1992 REVISED MARCH 1999
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
8 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2)
8 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
0.3 to 8 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage, V
O
8 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
5 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
20 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of output short-circuit current to GND (see Note 3)
unlimited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
: TLV2352I 40
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLV2352M 55
C to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, and PW Packages
260
C
. . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: FK, JG, and U Packages
300
C
. . . . . . . .
Stress beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN .
3. Short circuits from outputs to VDD can cause excessive heating and eventual device destruction.
DISSIPATION RATING TABLE
PACKAGE
TA
25
C
POWER RATING
DERATING
FACTOR
TA = 85
C
POWER RATING
TA = 125
C
POWER RATING
D
FK
JG
P
PW
U
725 mW
1375 mW
1050 mW
1000 mW
525 mW
700 mW
5.8 mW/
C
11.0 mW/
C
8.4 mW/
C
8.0 mW/
C
4.2 mW/
C
5.5 mW/
C
377 mW
715 mW
546 mW
520 mW
273 mW
370 mW
--
275 mW
210 mW
--
--
150 mW
recommended operating conditions
MIN
MAX
UNIT
Supply voltage, VDD
2
8
V
Common mode input voltage VIC
VDD = 3 V
0
1.75
V
Common-mode input voltage, VIC
VDD = 5 V
0
3.75
V
Operating free-air temperature TA
TLV2352I
40
85
C
O erating free-air tem erature, TA
TLV2352M
55
125
C
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