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Электронный компонент: BQ2019

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bq2019
ADVANCED BATTERY MONITOR IC
SLUS465E DECEMBER 1999 REVISED FEBRUARY 2003
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Multifunction Monitoring IC Designed to
Work With an Intelligent Host Controller
Provides State-of-Charge Information for
Rechargeable Batteries
Enhances Charge Termination
D
Ideal for Single-Cell Li-Ion or 3-Cell NiMH
Applications
D
High-Accuracy Coulometric Charge and
Discharge Current Integration With Offset
Calibration
D
32 Bytes of General-Purpose RAM
D
96 Bytes of Flash (Including 32 Bytes of
Shadow Flash)
D
8 Bytes of ID ROM
D
Internal Temperature Sensor Eliminates the
Need for an External Thermistor
D
Multifunction Digital Output Port
D
High-Accuracy Internal Timebase
Eliminates External Crystal Oscillator
D
Low Power Consumption
Operating: <80
A
Sleep: <1.5
A
D
Single-Wire HDQ Serial Interface
D
Packaging: 8-Lead TSSOP
description
The bq2019 advanced battery-monitoring IC accurately measures the charge and discharge currents in a
rechargeable battery pack. In pack integration, the bq2019 is the basis of a comprehensive battery-capacity
management system in portable applications such as cellular phones, PDAs, or other portable products.
The bq2019 works with the host controller in the portable system to implement the battery management system.
The host controller interprets the bq2019 data and communicates meaningful battery data to the end-user or
power-management system.
The bq2019 provides 64 bytes of general-purpose flash memory, 8 bytes of ID ROM, and 32 bytes of
flash-backed RAM for data storage. The nonvolatile memory can maintain formatted battery-monitor
information, identification codes, warranty information, or other critical battery parameters when the battery is
temporarily shorted or deeply discharged.
AVAILABLE OPTIONS
PACKAGED DEVICE
TA
MARKING
8-LEAD TSSOP
(PW)
20
C to 70
C
bq219
bq2019PW
Copyright
2003, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
4
8
7
6
5
REG
V
CC
V
SS
HDQ
STAT
SR
DC
OSC
PW PACKAGE
(TOP VIEW)
DC Internal connection only. Do not connect
bq2019
ADVANCED BATTERY MONITOR IC
SLUS465E DECEMBER 1999 REVISED FEBRUARY 2003
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
functional block diagram
_
+
Bandgap
Voltage
Reference
VCC
REG
Controller
Temperature
Sensor
VFC
SR
OSC
OSC
OSC
Serial
Interface
ID ROM
3
8 RAM Scratch
RAM
32
8 Shadow
Flash
32
8 RAM
2 - 32
8 Pages of
Flash
Charge/Discharge,
Counters-Timers,
and Temperature
Registers
HDQ
STAT
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
I/O
DESCRIPTION
HDQ
4
I/O
Single-wire HDQ interface
DC
6
I
Internal connection only. Do not connect.
OSC
5
O
Time-base adjust for the oscillator
REG
1
O
Regulator output
SR
7
I
Current-sense input
STAT
8
O
Open-drain status output
VCC
2
I
Supply voltage
VSS
3
Ground
bq2019
ADVANCED BATTERY MONITOR IC
SLUS465E DECEMBER 1999 REVISED FEBRUARY 2003
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
detailed description
REG (Regulator output)
REG is the output of the operational amplifier that drives an external pass N-channel JFET to provide an optional
regulated supply. The supply is regulated at 4.75 V nominal.
HDQ (Data input/output)
HDQ is a single-wire serial communications interface port. This bidirectional input/output communicates the
register information to the host.
STAT (Status Output)
STAT is a general-purpose output port; its state is controlled via the HDQ serial communications interface.
SR (Current sense inputs)
The bq2019 interprets charge and discharge activity by monitoring and integrating the voltage between SR
and V
SS
.
OSC (Time Base Adjust for the Oscillator)
OSC is a programmable current source that adjusts the internal time base by an external resistor.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage (VCC with respect to GND)
0.3 to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, SR (all with respect to GND)
0.3 V to V
CC
+0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current (STAT pin)
5 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current (REG pin)
400 nA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current (HDQ pin)
5 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
20
C to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (soldering, 10 s)
300
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
recommended operating conditions
MIN
TYP
MAX
UNIT
Supply voltage, VCC
2.8
5.5
V
S ppl c rrent I
VCC = 5.5 V, flash programming not active
88
100
A
Supply current, ICCOP
VCC = 4.3 V, flash programming not active
80
90
A
Sleep current, ISLEEP
VCC = 4.3 V, flash programming not active
1
A
Flash programming supply current, ICCPROG
VCC = 5.5
16
25
mA
Flash erase supply current, ICCERASE
VCC = 5.5
16
25
mA
Operating ambient temperature, TOPR
20
70
C
bq2019
ADVANCED BATTERY MONITOR IC
SLUS465E DECEMBER 1999 REVISED FEBRUARY 2003
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
dc
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOL
Digital output low HDQ pin
IOL = 350
A
0.4
V
IOL
Digital output low sink current
350
A
VIL
Digital input low HDQ pin
0.7
V
VIH
Digital input high HDQ pin
VCC < 4.2 V
1.7
V
VIH
Digital input high HDQ pin
VCC > 4.2 V
1.9
R
Z(SR) SR input impedance
0.2 V < VSR <VCC
10
M
ac
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Power on reset delay
Delay time after VCC is at least 2.8 V before HDQ communication is attempted.
500
ms
timer characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Oscillator current coefficient
Variation of oscillator frequency due to change in ROSC
10
ppm/
Timer accuracy error
ROSC = 100 k
3%
3%
temperature register characteristics over recommended operating temperature and supply
voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Reported temperature resolution
1
K
Reported temperature accuracy
VCC = 3.6 V
3
3
K
Reported temperature drift
2
K/V
REG pin characteristics over recommended operation temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Regulator threshold
4.5
4.75
5
V
Vgs(off)
N-channel JFET for regulation
1.5
4.2
V
bq2019
ADVANCED BATTERY MONITOR IC
SLUS465E DECEMBER 1999 REVISED FEBRUARY 2003
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
VFC characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input voltage
100
100
mV
Charge/discharge gain
Temperature = 25
C, VCC = 3.6 V
89
90.5
92
Hz/V
Supply voltage gain coefficient
100 V < VSR < 100 mV
0.5
%/V
Temperature gain coefficient
0.005
%/
C
Integrated nonlinearity
100 V < VSR < 100 mV
0.2%
0.5%
Offset voltage
500
40
500
V
Compensated offset
At calibrated temperature and voltage
10
0
10
V
Compensated offset
2.8 V
VCC
4.2 V
25
25
V
flash memory characteristics over recommended operating temperature and supply voltage
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Data retention
5
Years
Flash programming write-cycles
10000
Cycles
Byte programming time
90
s
RAM-to-flash block programming time
1520
s
Block-erase time
1520
s
Standard serial communication (HDQ) timing specification over recommended operating
temperature and supply voltage (unless otherwise noted) (see Figures 1 and 2)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t(B)
Break timing
190
s
t(BR)
Break recovery time
40
s
t(CYCH)
Host bit window
190
ns
t(HW1)
Host sends 1
32
50
s
t(HW0)
Host sends 0
100
145
s
t(RSPS)
bq2019 to host response
190
320
s
t(CYCD)
bq2019 bit window
190
250
s
t(start-detect)
See Note 1
5
ns
t(DW1)
bq2019 sends 1
32
50
s
t(DW0)
bq2019 sends 0
80
145
s
NOTE 1: The HDQ engine of the bq2019 interests a 5-ns or longer glitch on HDQ as a bit start. A sufficient number of glitches 5 ns or longer could
result in incorrect data being written to the device. The HDQ line should be properly deglitched to ensure that this does not occur.