bq26220
SLUS521B - AUGUST 2002 - REVISED FEBRUARY 2004
HIGH PERFORMANCE BATTERY MONITOR IC
WITH COULOMB COUNTER, VOLTAGE AND, TEMPERATURE MEASUREMENT
1
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FEATURES
D
Multifunction Monitoring Integrated Circuit
Designed to Work With an Intelligent Host
Controller :
- Provides State of Charge Information for
Rechargeable Batteries
- Provides Accurate Battery Voltage and
Temperature Measurement
D
High Accuracy Coulometric Charge and
Discharge Current Integration With
Automatic Offset Compensation
D
11-Bit Analog-to-Digital Converter Reports
Battery Voltage With Gain and Offset
Correction
D
Differential Current Sense
D
32 Bytes of General Purpose RAM
D
96 Bytes of Flash (Including 32 Bytes of
Shadow Flash)
D
8 Bytes of ID ROM
D
Internal Temperature Sensor Eliminates the
Need for an External Thermistor
D
Programmable Digital Input/Output Port
D
High-Accuracy Internal Timebase Eliminates
External Crystal Oscillator
D
Low Power Consumption:
- Operating : 30
A
- Sleep: 1
A
- Hibernate: 600 nA
D
Single-Wire HDQ Serial Interface
D
Packaging: 8-LEAD TSSOP
DESCRIPTION
The bq26220 is an advanced battery monitoring
device designed to accurately measure the
charge and discharge currents in rechargeable
battery packs. Intended for pack integration, the
bq26220 contains all the necessary functions to
form the basis of a comprehensive battery
capacity management system in portable
applications such as cellular phones, PDA's, or
other portable products.
The bq26220 works with the host controller in the
portable system to implement the battery
management system. The host controller is
responsible for interpreting the bq26220 data and
communicating meaningful battery data to the
end-user or power management system.
This device provides 64 bytes of general-purpose
flash memory, 8 bytes of ID ROM and 32 bytes of
flash-backed RAM for data storage. The
nonvolatile memory can maintain formatted
battery monitor information, identification codes,
warranty information, or other critical battery
parameters during periods when the battery is
temporarily shorted or deeply discharged.
1
2
3
4
8
7
6
5
RBI
VCC
VSS
HDQ
GPIO
SRP
SRN
BAT
PW PACKAGE
(TOP VIEW)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
2002, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
bq26220
SLUS521B - AUGUST 2002 - REVISED FEBRUARY 2004
2
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ORDERING INFORMATION
{
T
A
PACKAGE
PART NUMBER
TOP MARKING
-20
_
C to 70
_
C
TSSOP
bq26220PW
26220
PW (TSSOP-8) package is available taped and reeled. Add R suffix to device type (e.g. bq26220PWR) to
order quantities of 2000 devices per reel for TSSOP-8.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
bq26220
UNIT
Supply voltage (VCC with respect to GND)
-0.3 to +7.0
Input voltage, SRP and SRN, RBI, GPIO and BAT (all with respect to GND)
-0.3 V to VCC + 0.3 V
V
Input voltage, HDQ (with respect to GND)
-0.3 to +7.0
V
Output current (GPIO)
5
mA
Output current (HDQ)
5
mA
Operating free-air temperature range, TA
-20
C to 70
C
Storage temperature range, Tstg
- 65
C to 150
C
C
Lead temperature (soldering, 10 s)
300
C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only,
and operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
RECOMMENDED OPERATING CONDITIONS
PARAMETER
MIN
MAX
UNIT
VCC
Supply voltage
2.8
4.5
V
V(POR)
Power-on reset voltage
1.9
2.45
V
TA
Operating ambient temperature
-20
70
_
C
bq26220
SLUS521B - AUGUST 2002 - REVISED FEBRUARY 2004
3
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dc electrical characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ICC(OP)
Supply current
VCC = 4.3 V, flash programming not active
30
37
A
I(SLEEP)
Sleep current
VCC = 4.3 V, flash programming not active
1
5
A
I(HIBERNATE) Hibernate current
0 < VCC < VPOR
600
nA
ICC(PROG)
Flash programming supply current
VCC = 5.5
21
30
mA
ICC(ERASE) Flash erase supply current
VCC = 5.5
21
30
mA
I(RBI)
Register back-up current
RBI pin only,
1.2 V< VCC < V(POR)
25
nA
IOL
Digital output low sink current, GPIO
and HDQ pins
VOL = 0.4 V
1
mA
VIL
Digital input low, GPIO and HDQ pins
0.7
VIH
Digital input high, GPIO and HDQ pins
VCC < 4.2 V
1.7
V
VIH
Digital input high, GPIO and HDQ pins
VCC > 4.2 V
1.9
V
RBAT
BAT input impedance
10
M
RSR
SRP, SRN input impedance
0.2 V < (V(SRP) - V(SRN)
)
< VCC
10
M
timer characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
E(TMR)
Timer accuracy error
-4%
4%
temperature register characteristics over recommended operating temperature and supply
voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
T(RES)
Reported temperature resolution
0.25
E(T)
Reported temperature
accuracy
BQ26220PW
TSSOP package
-4
4
_
K
voltage ADC specification, over recommended operating temperature and supply voltage, (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Least significant bit (LSB)(1)
2.6 V
VBAT
4.5 V
2.44
mV
Integral nonlinearity (INL)
2.6 V
VBAT
4.5 V, Vcc=VBAT
-4
+4
LSB
Differential nonlinearity (DNL)
2.6 V
VBAT
4.5 V, Vcc=VBAT
-1
+1
LSB
Offset error
2.6 V
VBAT
4.5 V, Vcc=VBAT
-3
+14
LSB
Maximum error
2.6 V
VBAT
4.5 V, Vcc=VBAT
-9
+15
LSB
NOTE 1. For a more detailed explantion of parameters refer to the application note, Understanding Data Converters, TI Literature No. SLAA013.
bq26220
SLUS521B - AUGUST 2002 - REVISED FEBRUARY 2004
4
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VFC characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VI(SR)
Input voltage VSRP - VSRN
-100
100
mV
G(VFC)
Charge/discharge gain
Temperature = 25
_
C, VCC = 3.6
88
91
94
Hz/V
G(VCC)
Supply voltage gain coefficient
-100 mV < (V(SRP) - V(SRN)) < 100 mV
0.5
%/V
G(TCO)
Temperature gain coefficient
0.005
%/
_
C
INL
Integrated nonlinearity
-100 mV < (V(SRP) - V(SRN)) < 100 mV
0.2%
0.5%
V(COS)
Auto compensated offset
2.8 V
VCC
4.2 V
-20
-1
20
V
flash memory characteristics over recommended operating temperature and supply voltage
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Data retention
5
Years
Flash programming write-cycles
10,000
Cycles
t(BYTEPROG) Byte programming time
90
t(BLCKPROG)
RAM-to-flash block programming
time
60
s + 30
s/byte
1020
s
t(BLKERASE) Block-erase time
60
s + 30
s/byte
1020
standard serial communication (HDQ) timing specification over recommended operating
temperature and supply voltage (unless otherwise noted). See Figures 1 and 2.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
T(B)
Break timing
190
T(BR)
Break recovery
40
T(CYCH)
Host bit window
190
T(HW1)
Host sends 1
32
50
s
T(HW0)
Host sends 0
100
145
s
T(RSPS)
bq26220 to host response
190
320
T(CYCB)
bq26220 bit window
190
250
T(start-detect) (1)
5
ns
T(DW1)
bq26220, sends 1
32
50
s
T(DW0)
bq26220, sends 0
80
145
s
NOTE 1. The HDQ engine of the bq26220 interpret a 5 ns or longer glitch on HDQ as a bit start. A sufficient number of glitches at 5 ns or longer
could result in incorrect data being written to the device. The HDQ line should be properly deglitched to ensure that this does not occur.
bq26220
SLUS521B - AUGUST 2002 - REVISED FEBRUARY 2004
5
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PARAMETER MEASUREMENT INFORMATION
T(CYCH)
T(HW1)
T(HW0)
T(CYCB)
T(DW1)
T(DW0)
T(B)
T(BR)
Figure 1. HDQ Timing Diagram
BREAK
COMMAND BYTE
(Written by Host to bq26220)
0
(LSB)
1
2
3
4
5
6
7
(MSB)
REGISTER ADDRESS
DATA BYTE
(Received by Host From bq26220)
0
(LSB)
t(RSPS)
2
3
4
5
6
7
(MSB)
1
Figure 2. Typical Communication with the bq26220
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