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Электронный компонент: LF353DR

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LF353
JFET-INPUT
DUAL OPERATIONAL AMPLIFIER
SLOS012B MARCH 1987 REVISED AUGUST 1994
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Low Input Bias Current . . . 50 pA Typ
D
Low Input Noise Current
0.01 pA/
Hz Typ
D
Low Input Noise Voltage . . . 18 nV/
Hz Typ
D
Low Supply Current . . . 3.6 mA Typ
D
High Input Impedance . . . 10
12
Typ
D
Internally Trimmed Offset Voltage
D
Gain Bandwidth . . . 3 MHz Typ
D
High Slew Rate . . . 13 V/
s Typ
description
This device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage. It
requires low supply current yet maintains a large gain-bandwidth product and a fast slew rate. In addition, the
matched high-voltage JFET input provides very low input bias and offset currents.
The LF353 can be used in applications such as high-speed integrators, digital-to-analog converters,
sample-and-hold circuits, and many other circuits.
The LF353 is characterized for operation from 0
C to 70
C.
symbol (each amplifier
+
IN
OUT
IN +
AVAILABLE OPTIONS
VIOmax
PACKAGE
TA
VIOmax
AT 25
C
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
0
C to 70
C
10 mV
LF353D
LF353P
The D packages are available taped and reeled. Add the suffix R to the
device type (ie., LF353DR).
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
CC +
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage, V
CC
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, V
I
(see Note 1)
15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of output short circuit
unlimited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating temperature range
0
C to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOTE 1: Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage.
Copyright
1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
8
7
6
5
1OUT
1IN
1IN +
V
CC
V
CC +
2OUT
2IN
2IN +
(TOP VIEW)
D OR P PACKAGE
LF353
JFET-INPUT
DUAL OPERATIONAL AMPLIFIER
SLOS012B MARCH 1987 REVISED AUGUST 1994
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
MIN
MAX
UNIT
Supply voltage, VCC +
3.5
18
V
Supply voltage, VCC
3.5
18
V
electrical characteristics over operating free-air temperature range, V
CC
=
15 V (unless
otherwise specified)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
VIO
Input offset voltage
VIC = 0
RS = 10 k
25
C
5
10
mV
VIO
Input offset voltage
VIC = 0,
RS = 10 k
Full range
13
mV
VIO
Average temperature coefficient of input offset
voltage
VIC = 0,
RS = 10 k
10
V/
C
IIO
Inp t offset c rrent
VIC = 0
25
C
25
100
pA
IIO
Input offset current
VIC = 0
70
C
4
nA
IIB
Inp t bias c rrent
VIC = 0
25
C
50
200
pA
IIB
Input bias current
VIC = 0
70
C
8
nA
VICR
Common-mode input voltage range
11
12
to
15
V
VOM
Maximum peak output voltage swing
RL = 10 k
12
13.5
V
AVD
Large signal differential voltage
VO =
10 V
RL = 2 k
25
C
25
100
V/mV
AVD
Large-signal differential voltage
VO =
10 V,
RL = 2 k
Full range
15
V/mV
ri
Input resistance
TJ = 25
C
1012
CMRR
Common-mode rejection ratio
RS
10 k
70
100
dB
kSVR
Supply-voltage rejection ratio
See Note 2
70
100
dB
ICC
Supply current
3.6
6.5
mA
Full range is 0
C to 70
C.
Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques
must be used that will maintain the junction temperatures as close to the ambient temperature as possible.
NOTE 2: Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously.
operating characteristics, V
CC
=
15 V, T
A
= 25
C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VO1/VO2
Crosstalk attentuation
f = 1 kHz
120
dB
SR
Slew rate
8
13
V/
s
B1
Unity-gain bandwidth
3
MHz
Vn
Equivalent input noise voltage
f = 1 kHz,
RS = 20
18
nV/
Hz
In
Equivalent input noise current
f = 1 kHz
0.01
pA/
Hz
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL
APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
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BE FULLY AT THE CUSTOMER'S RISK.
In order to minimize risks associated with the customer's applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI's publication of information regarding any third
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Copyright
1998, Texas Instruments Incorporated