Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- ABSOLUTE MAXIMUM RATINGS
- PACKAGE DISSIPATION RATINGS
- RECOMMENDED OPERATING CONDITIONS
- PACKAGE/ORDERING INFORMATION
- PIN ASSIGNMENTS
- ELECTRICAL CHARACTERISTICS
- TYPICAL CHARACTERISTICS
- Table of Graphs (VS = 7.5 V)
- Table of Graphs (VS = 5 V)
- V S = +/-7.5 V Graphs
- V S = +/-5 V Graphs
- APPLICATION INFORMATION
- WIDEBAND, NONINVERTING OPERATION
- WIDEBAND, INVERTING GAIN OPERATION
- SINGLE SUPPLY OPERATION
- VIDEO AND HDTV DRIVERS
- ADC DRIVER APPLICATION
- DAC DRIVER APPLICATION
- POWER SUPPLY
- PRINTED-CIRCUIT BOARD LAYOUT TECHNIQUES FOR OPTIMAL PERFORMANCE
- PowerPAD DESIGN CONSIDERATIONS
- PowerPAD PCB LAYOUT CONSIDERATIONS
- POWER DISSIPATION AND THERMAL CONSIDERATIONS
- DESIGN TOOLS
- Evaluation Fixture, Spice Models, and Applications Support
- ADDITIONAL REFERENCE MATERIAL
THS3201
SLOS416A - JUNE 2003 - REVISED JANUARY 2004
1.8 GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER
DBV-5
DGN-8 DGK-8
D-8
FEATURES
D
Unity Gain Bandwidth: 1.8 GHz
D
High Slew Rate: 10500 V/
s
D
Distortion at 100 MHz: (G = 10 V/V,
R
L
= 100
,
2-V
PP
envelope)
- IMD
3
: -80 dBc
- OIP
3
: 41 dBm
D
Noise Figure : 11 dB (G = 10 V/V,
R
G
= 28
,
R
F
= 255
)
D
Input Referred Noise (f > 10 MHz)
- Voltage Noise: 1.65 nV/
Hz
- Noninverting Current Noise: 13.4 pA/
Hz
- Inverting Current Noise: 20 pA/
Hz
D
Output Current: +115/-100 mA
D
Power Supply Voltage Range:
3.3 V to
7.5 V
APPLICATIONS
D
Arbitrary Waveform Driver
D
High-Resolution, High-Sampling Rate ADC
Drivers
D
High-Resolution, High-Sampling Rate DAC
Output Buffers
D
If Amplification for Wireless Communications
Applciations
D
Broadcast Video and HDTV Line Drivers
DESCRIPTION
The THS3201 is a wide-band, high-speed
current-feedback amplifier, designed to operate over a
wide supply range of
3.3 V to
7.5 V for todays high
performance applications.
The wide supply range combined with distortion as low as
-74 dBc at 10 MHz, plus an extremely high slew rate of
10500 V/
s makes the THS3201 ideally suited for arbitrary
waveform driver applications. The distortion performance
also enables driving high-resolution and high-sampling
rate ADCs. Moreover, the gain of +2 bandwidth of 850
MHz, combined with a 0.1 dB flatness of 380 MHz makes
the THS3201 ideal for broadcast video and HDTV
applications. The THS3201 also offers excellent
performance for IF amplification in wireless
communications systems by having IMD
3
performance of
-80 dBc, OIP
3
of 41 dBm, and a noise figure of 11 dB, all at
100 MHz with a gain +10 V/V, while driving a 2-V
PP
envelope into a 100-
load.
The THS3201 is offered in a 5-pin SOT-23, 8-pin SOIC,
and an 8-pin MSOP with PowerPAD
packages.
RELATED DEVICES AND DESCRIPTIONS
THS3202
7.5-V 2-GHz Dual Low Distortion CFB Amplifier
THS3001
15-V 420-MHz Low Distortion CFB Amplifier
THS3061/2
15-V 300-MHz Low Distortion CFB Amplifier
THS3122
15-V Dual CFB Amplifier With 350 mA Drive
THS4271
7.5-V 1.4-GHz Low Distortion VFB Amplifier
_
+
768
+7.5 V
49.9
VI
-7.5 V
50
Source
Low-Noise, Low-Distortion, Wideband Application Circuit
NOTE: Power supply decoupling capacitors not shown
768
50
THS3201
49.9
50
0
1
2
3
4
5
6
7
8
100 k
1 M
10 M
100 M
1 G
10 G
f - Frequency - Hz
Noninverting Gain - dB
NONINVERTING SMALL SIGNAL
FREQUENCY RESPONSE
RF = 768
Gain = 2.
RL = 100
,
VO = 0.2 VPP.
VS =
7.5 V
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
www.ti.com
Copyright
2003 - 2004, Texas Instruments Incorporated
PowerPAD is a trademark of Texas Instruments Incorporated.
THS3201
SLOS416A - JUNE 2003 - REVISED JANUARY 2004
www.ti.com
2
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
Supply voltage, V
S
16.5 V
Input voltage, V
I
V
S
Output current, I
O
(2)
175 mA
Differential input voltage, V
ID
3 V
Continuous power dissipation See Dissipation Rating Table
Maximum junction temperature, T
J
(3)
150
C
Maximum junction temperature, continuous
operation, long term reliability T
J
(4)
125
C
Operating free-air temperature range, T
A
-40
C to 85
C
Storage temperature range, T
stg
-65
C to 150
C
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
300
C
HBM
3000 V
ESD ratings:
CDM
1500 V
ESD ratings:
MM
100 V
(1)
Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not implied.
(2)
The THS3201 may incorporate a PowerPAD
on the underside
of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical briefs SLMA002 and SLMA004 for more information
about utilizing the PowerPAD thermally enhanced package.
(3)
The absolute maximum temperature under any condition is
limited by the constraints of the silicon process.
(4)
The maximum junction temperature for continuous operation is
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
JC
(
C/W)
JA
(1)
(
C/W)
POWER RATING(2)
(TJ = 125
C)
PACKAGE
JC
(
C/W)
JA
(
C/W)
TA
25
C
TA = 85
C
DBV (5)
55
255.4
391 mW
156 mW
D (8)
38.3
97.5
1.02 W
410 mW
DGN (8)
4.7
58.4
1.71 W
685 mW
DGK (8 pin)
54.2
260
385 mW
154 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125
C.
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125
C for best performance and
long term reliability.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Supply voltage
Dual supply
3.3
7.5
V
Supply voltage
Single supply
6.6
15
V
Operating free-air temperature, T
A
-40
85
C
PACKAGE/ORDERING INFORMATION
PACKAGED DEVICES
TEMPERATURE
PLASTIC SMALL
OUTLINE
(D)(1)
SOT-23(2)
PLASTIC MSOP(1)
POWERPAD
PLASTIC MSOP(1)
OUTLINE
(D)(1)
(DBV)
SYM
(DGN)
SYM
(DGK)
SYM
-40
C to 85
C
THS3201D
THS3201DBVT
BEO
THS3201DGN
BEN
THS3201DGK
BGP
-40
C to 85
C
THS3201DR
THS3201DBVR
BEO
THS3201DGNR
BEN
THS3201DGKR
BGP
(1) Available in tape and reel. The R suffix standard quantity is 2500 (e.g. THS3201DGNR).
(2) Available in tape and reel. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g. THS3201DBVT).
PIN ASSIGNMENTS
1
2
3
4
8
7
6
5
NC
V
IN -
V
IN +
V
S-
NC
V
S+
V
OUT -
NC
D, DGN, DGK
TOP VIEW
3
2
4
5
1
VOUT
VS-
IN+
VS+
IN -
SOT-23
TOP VIEW
NC = No Internal Connection
NOTE: If a PowerPAD is used, it is electrically isolated from the active circuitry.
THS3201
SLOS416A - JUNE 2003 - REVISED JANUARY 2004
www.ti.com
3
ELECTRICAL CHARACTERISTICS
VS =
7.5 V: Rf = 768
, RL = 100
, and G = +2 unless otherwise noted
THS3201
PARAMETER
TEST CONDITIONS
TYP
OVER TEMPERATURE
PARAMETER
TEST CONDITIONS
25
C
25
C
0
C to
70
C
-40
C
to 85
C
UNITS
MIN/TYP/
MAX
AC PERFORMANCE
G = +1, RF= 1.2 k
1.8
GHz
Small-signal bandwidth, -3 dB
G = +2, RF = 768
850
Typ
Small-signal bandwidth, -3 dB
(VO = 200 mVPP)
G = +5, RF = 619
565
MHz
Typ
(VO = 200 mVPP)
G = +10, RF = 487
520
MHz
Bandwidth for 0.1 dB flatness
G = +2, VO = 200 mVpp,
RF = 768
380
MHz
Typ
Large-signal bandwidth
G = +2, VO = 2 Vpp, RF = 715
880
MHz
Typ
Slew rate (25% to 75% level)
G = +1, VO = 5-V step
6200
V/
s
Typ
Slew rate (25% to 75% level)
G = +2, VO = 10-V step
10500
V/
s
Typ
Rise and fall time
G = +2, VO = 4-V step, RF = 768
0.6
ns
Typ
Settling time to 0.1%
G = -2, VO = 2-V step
20
ns
Typ
0.01%
G = -2, VO = 2-V step
60
ns
Typ
Harmonic distortion
G = +5, f = 10 MHz, VO = 2 Vpp
2nd harmonic
RL = 100
-75
dBc
Typ
2nd harmonic
RL = 500
-77
dBc
Typ
3rd harmonic
RL = 100
-91
dBc
Typ
3rd harmonic
RL = 500
-93
dBc
Typ
Third-order intermodulation
distortion (IMD3)
G = +10, fc = 100 MHz,
f = 200 kHz,
-80
dBc
Typ
Third-order output intercept
point (OIP3)
c
f = 200 kHz,
VO(envelope) = 2 Vpp
41
dBm
Typ
Noise figure
G = +10, fc = 100 MHz,
RF = 255
,
RG = 28
11
dB
Typ
Input voltage noise
f > 10 MHz
1.65
nV/
Hz
Typ
Input current noise (noninverting)
f > 10 MHz
13.4
pA/
Hz
Typ
Input current noise (inverting)
f > 10 MHz
20
pA/
Hz
Typ
Differential gain
NTSC
0.008%
Typ
Differential gain
G = +2, RL = 150
,
PAL
0.004%
Typ
Differential phase
G = +2, RL = 150
,
RF = 768
NTSC
0.007
Typ
Differential phase
RF = 768
PAL
0.011
Typ
DC PERFORMANCE
Open-loop transimpedance gain
VO =
1 V, RL = 1 k
300
200
140
120
k
Min
Input offset voltage
VCM = 0 V
0.7
3
3.8
4
mV
Max
Average offset voltage drift
VCM = 0 V
10
13
V/
C
Typ
Input bias current (inverting)
VCM = 0 V
13
60
80
85
A
Max
Average bias current drift (-)
VCM = 0 V
300
400
nA/
C
Typ
Input bias current (noninverting)
VCM = 0 V
14
35
45
50
A
Max
Average bias current drift (+)
VCM = 0 V
300
400
nA/
C
Typ
THS3201
SLOS416A - JUNE 2003 - REVISED JANUARY 2004
www.ti.com
4
ELECTRICAL CHARACTERISTICS
VS =
7.5 V: Rf = 768
, RL = 100
, and G = +2 unless otherwise noted
THS3201
PARAMETER
TEST CONDITIONS
TYP
OVER TEMPERATURE
PARAMETER
TEST CONDITIONS
25
C
25
C
0
C to
70
C
-40
C
to 85
C
UNITS
MIN/TYP/
MAX
INPUT
Common-mode input range
5.1
5
5
5
V
Min
Common-mode rejection ratio
VCM =
3.75 V
71
60
58
58
dB
Min
Inverting input impedance, Zin
Open loop
16
Typ
Input resistance
Noninverting
780
k
Typ
Input resistance
Inverting
11
Typ
Input capacitance
Noninverting
1
pF
Typ
OUTPUT
Voltage output swing
RL = 1 k
6
5.9
5.8
5.8
V
Min
Voltage output swing
RL = 100
5.8
5.7
5.5
5.5
V
Min
Current output, sourcing
RL = 20
115
105
100
100
mA
Min
Current output, sinking
RL = 20
100
85
80
80
mA
Min
Closed-loop output impedance
G = +1, f = 1 MHz
0.01
Typ
POWER SUPPLY
Minimum operating voltage
Absolute minimum
3.3
3.3
3.3
V
Min
Maximum operating voltage
Absolute maximum
8.25
8.25
8.25
V
Max
Maximum quiescent current
14
18
21
21
mA
Max
Power supply rejection (+PSRR)
VS+ = 7 V to 8 V
69
63
60
60
dB
Min
Power supply rejection (-PSRR)
VS- = -7 V to 8 V
65
58
55
55
dB
Min
THS3201
SLOS416A - JUNE 2003 - REVISED JANUARY 2004
www.ti.com
5
ELECTRICAL CHARACTERISTICS
VS =
5 V: Rf = 715
, RL = 100
, and G = +2 unless otherwise noted
THS3201
PARAMETER
TEST CONDITIONS
TYP
OVER TEMPERATURE
PARAMETER
TEST CONDITIONS
25
C
25
C
0
C to
70
C
-40
C
to 85
C
UNITS
MIN/TYP/
MAX
AC PERFORMANCE
G = +1, RF= 1.2 k
1.3
GHz
Small-signal bandwidth, -3dB
G = +2, RF = 715
725
Typ
Small-signal bandwidth, -3dB
(VO = 200 mVPP)
G = +5, RF = 576
540
MHz
Typ
(VO = 200 mVPP)
G = +10, RF = 464
480
MHz
Bandwidth for 0.1 dB flatness
G = +2, VO = 200 mVpp,
RF= 715
170
MHz
Typ
Large-signal bandwidth
G = +2, VO = 2 Vpp, RF= 715
900
MHz
Typ
Slew rate (25% to 75% level)
G = +1, VO = 5-V step
5200
V/
s
Typ
Slew rate (25% to 75% level)
G = +2, VO = 5-V step
5200
V/
s
Typ
Rise and fall time
G = +2, VO = 4-V step,
RF= 715
0.7
ns
Typ
Settling time to 0.1%
G = -2, VO = 2-V step
20
ns
Typ
0.01%
G = -2, VO = 2-V step
60
ns
Typ
Harmonic distortion
G = +5, f = 10 MHz, VO = 2 Vpp
2nd harmonic
RL = 100
-68
dBc
Typ
2nd harmonic
RL = 500
-70
dBc
Typ
3rd harmonic
RL = 100
-72
dBc
Typ
3rd harmonic
RL = 500 k
-74
dBc
Typ
Third-order intermodulation
distortion (IMD3)
G = +10, fc = 100 MHz,
f = 200 kHz,
-65
dBc
Typ
Third-order output intercept
point (OIP3)
c
f = 200 kHz,
VO(envelope) = 2 Vpp
33.5
dBm
Typ
Noise figure
G = +10, fc = 100 MHz,
RF = 255
,
RG = 28
11
dB
Typ
Input voltage noise
f > 10 MHz
1.65
nV/
Hz
Typ
Input current noise (noninverting)
f > 10 MHz
13.4
pA/
Hz
Typ
Input current noise (inverting)
f > 10 MHz
20
pA/
Hz
Typ
Differential gain
NTSC
0.006%
Typ
Differential gain
G = +2, RL = 150
,
PAL
0.004%
Typ
Differential phase
G = +2, RL = 150
,
RF= 768
NTSC
0.03
Typ
Differential phase
RF= 768
PAL
0.04
Typ
DC PERFORMANCE
Open-loop transimpedance gain
VO = +1 V, RL = 1 k
300
200
140
120
k
Min
Input offset voltage
VCM =0 V
0.7
3
3.8
4
mV
Max
Average offset voltage drift
VCM = 0 V
10
13
V/
C
Typ
Input bias current (inverting)
VCM = 0 V
13
60
80
85
A
Max
Average bias current drift (-)
VCM = 0 V
300
400
nA/
C
Typ
Input bias current (noninverting)
VCM = 0 V
14
35
45
50
A
Max
Average bias current drift (+)
VCM = 0 V
300
400
nA/
C
Typ
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