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Электронный компонент: THS4151

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-100
-90
-80
-70
-60
-50
-40
100 k
1 M
THD - T
otal Harmonic Distortion - dB
f - Frequency - Hz
THS4151
TOTAL HARMONIC DISTORTION
vs
FREQUENCY
10 M
100 M
Single Input to
Differential Output
Differential Input to
Differential Output
Gain = 1,
Rf = 390
,
RL = 800
,
VO = 2 Vpp,
VCC = 5 V to
15 V
typical A/D application circuit
DIGITAL
OUTPUT
VIN
-
+
-
+
DVDD
VOCM
AVSS
AVDD
AIN
AIN
VDD
Vref
5 V
-5 V
THS4150, THS4151
HIGH SPEED DIFFERENTIAL I/O AMPLIFIERS
SLOS321D - MAY 2000 - REVISED JANUARY 2004
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
features
D
High Performance
- 150 MHz -3 dB Bandwidth (V
CC
=
5 V)
- 650 V/
s Slew Rate (V
CC
=
15 V)
- -89 dB Third Harmonic Distortion at
1 MHz
- -83 dB Total Harmonic Distortion at
1 MHz
- 7.6 nV/
Hz Input-Referred Noise
D
Differential Input/Differential Output
- Balanced Outputs Reject Common-Mode
Noise
- Differential Reduced Second Harmonic
Distortion
D
Wide Power Supply Range
- V
CC
= 5 V Single Supply to
15 V Dual
Supply
D
I
CC(SD)
= 1 mA (VCC =
5) in Shutdown
Mode (THS4150)
key applications
D
Single-Ended To Differential Conversion
D
Differential ADC Driver
D
Differential Antialiasing
D
Differential Transmitter and Receiver
D
Output Level Shifter
description
The THS415x is one in a family of fully differential
input/differential output devices fabricated using
Texas Instruments' state-of-the-art BiComI
complementary bipolar process.
The THS415x is made of a true fully-differential
signal path from input to output. This design leads
to an excellent common-mode noise rejection and
improved total harmonic distortion.
RELATED DEVICES
DEVICE
DESCRIPTION
THS412x
100 MHz, 43 V/
s, 3.7 nV/
Hz
THS413x
150 MHz, 51 V/
s, 1.3 nV/
Hz
THS414x
160 MHz, 450 V/
s, 6.5 nV/
Hz
Copyright
2001 - 2004, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
THS4151
D, DGN, DGK PACKAGES
(TOP VIEW)
1
2
3
4
8
7
6
5
V
IN-
V
OCM
V
CC+
V
OUT+
V
IN+
NC
V
CC-
V
OUT-
THS4150
D, DGN, DGK PACKAGES
(TOP VIEW)
SHUTDOWN
NUMBER OF
CHANNELS
DEVICE
THS4150
THS4151
1
1
X
-
HIGH-SPEED DIFFERENTIAL I/O FAMILY
1
2
3
4
8
7
6
5
V
IN-
V
OCM
V
CC+
V
OUT+
V
IN+
PD
V
CC-
V
OUT-
THS4150, THS4151
HIGH SPEED DIFFERENTIAL I/O AMPLIFIERS
SLOS321D - MAY 2000 - REVISED JANUARY 2004
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
EVALUATION
TA
SMALL OUTLINE
MSOP PowerPAD
MSOP
EVALUATION
MODULES
TA
SMALL OUTLINE
(D)
(DGN)
SYMBOL
(DGK)
SYMBOL
MODULES
0
C to 70
C
THS4150CD
THS4150CDGN
AQB
THS4150CDGK
ATT
THS4150EVM
0
C to 70
C
THS4151CD
THS4151CDGN
AQD
THS4151CDGK
ATU
THS4151EVM
-40
C to 85
C
THS4150ID
THS4150IDGN
AQC
THS4150IDGK
AST
-
-40
C to 85
C
THS4151ID
THS4151IDGN
AQE
THS4151IDGK
ASU
-
absolute maximum ratings over operating freeair temperature range (unless otherwise noted)
Supply voltage, V
CC
- to V
CC
+
16.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, V
I
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
(see Note 1)
150 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum junction temperature, T
J
(see Note 2)
150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum junction temperature, continuous operation, long term reliability, T
J
(see Note 3)
125
C
. . . . . . . .
Operating free-air temperature, T
A
:C suffix
0
C to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix
-40
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, T
stg
-65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 Inch) from case for 10 seconds
300
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD ratings:
HBM
2500 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CDM
1500 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MM
200 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: The THS415x may incorporate a PowerPad
on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the PowerPad
thermally enhanced package.
NOTE 2: The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
NOTE 3: The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
PACKAGE
JA
JC
POWER RATING
PACKAGE
JA
(
C/W)
JC
(
C/W)
TA = 25
C
TA = 85
C
D
97.5
38.3
1.02 W
410 mW
DGN
58.4
4.7
1.71 W
685 mW
DGK
260
54.2
385 mW
154 mW
This data was taken using the JEDEC standard High-K test PCB.
Power rating is determined with a junction temperature of 125
C. This is the point where distortion starts to
substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or
below 125
C for best performance and long term reliability.
recommended operating conditions
MIN
TYP
MAX
UNIT
Supply voltage, VCC+ to VCC-
Dual supply
2.5
15
V
Supply voltage, VCC+ to VCC-
Single supply
5
30
V
Operating free-air temperature, T
A
C suffix
0
70
C
Operating free-air temperature, T
A
I suffix
-40
85
C
PowerPAD is a trademark of Texas Instruments.
THS4150, THS4151
HIGH SPEED DIFFERENTIAL I/O AMPLIFIERS
SLOS321D - MAY 2000 - REVISED JANUARY 2004
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, VCC =
5 V, RL = 800
, TA = 25
C (unless otherwise noted)
dynamic performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC = 5
150
BW
Small signal bandwidth (-3 dB)
VCC =
5
Gain = 1, Rf = 390
150
MHz
BW
Small signal bandwidth (-3 dB)
VCC =
15
Gain = 1, Rf = 390
150
MHz
VCC = 5
80
BW
Small signal bandwidth (-3 dB)
VCC =
5
Gain = 2, Rf = 750
81
MHz
BW
Small signal bandwidth (-3 dB)
VCC =
15
Gain = 2, Rf = 750
81
MHz
SR
Slew rate (see Notes 1)
VCC =
15,
Gain = 1
650
V/
s
ts
Settling time to 0.1%
Differential step voltage = 2 VPP, Gain = 1
53
ns
ts
Settling time to 0.01%
Differential step voltage = 2 VPP, Gain = 1
247
ns
The full range temperature is 0
C to 70
C for the C suffix, and -40
C to 85
C for the I suffix.
NOTE 4: Slew rate is measured from an output level range of 25% to 75%.
distortion performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC = 5
f = 1 MHz
-85
Total harmonic distortion
VCC = 5
f = 8 MHz
-66
THD
Total harmonic distortion
Differential input, differential output
VCC =
5
f = 1 MHz
-83
dB
THD
Differential input, differential output
Gain = 1, Rf = 390
, RL = 800
VO = 2 VPP
VCC =
5
f = 8 MHz
-65
dB
Gain = 1, Rf = 390 , RL = 800
VO = 2 VPP
VCC =
15
f = 1 MHz
-84
VCC =
15
f = 8 MHz
-65
Spurious free dynamic range (SFDR)
VO = 2 VPP
f = 1 MHz
-87
dB
Third intermodulation distortion
VO = 0.14 VRMS
Gain = 1, f = 20 MHz
-95
dBc
The full range temperature is 0
C to 70
C for the C suffix, and -40
C to 85
C for the I suffix.
noise performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Vn
Input voltage noise
f = 10 kHz
7.6
nV/
Hz
In
Input current noise
f = 10 kHz
1.78
pA/
Hz
The full range temperature is 0
C to 70
C for the C suffix, and -40
C to 85
C for the I suffix.
THS4150, THS4151
HIGH SPEED DIFFERENTIAL I/O AMPLIFIERS
SLOS321D - MAY 2000 - REVISED JANUARY 2004
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, VCC =
5 V, RL = 800
, TA = 25
C (unless otherwise noted) (continued)
dc performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Open loop gain
TA = 25
C
63
67
dB
Open loop gain
TA = full range
60
dB
Input offset voltage
TA = 25
C
1.1
7
VOS
Input offset voltage
TA = full range
8.5
mV
VOS
Input offset voltage, referred to VOCM
TA = 25
C
0.6
8
mV
Offset drift
TA = full range
7
V/
C
IIB
Input bias current
TA = full range
7.3
15
A
IOS
Input offset current
TA = full range
250
1200
nA
Offset drift
TA = full range
0.7
nA/
C
Shutdown delay to output
TA = full range
1.1
s
The full range temperature is 0
C to 70
C for the C suffix, and -40
C to 85
C for the I suffix.
input characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CMRR
Common-mode rejection ratio
TA = full range
-75
-83
dB
VICR
Common-mode input voltage range
-3.8 to 4.6
V
VICR
Common-mode input voltage range
-3.8 to 4.6
V
ri
Input resistance
Measured into each input terminal
14.4
M
Ci
Input capacitance, closed loop
3.9
pF
ro
Output resistance
Open loop/single ended
0.4
ro(SD)
Output resistance
Shutdown
636
The full range temperature is 0
C to 70
C for the C suffix, and -40
C to 85
C for the I suffix.
output characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC = 5 V
TA = 25
C
1.2 to 3.8
0.9 to 4.1
VCC = 5 V
TA = full range
1.2 to 3.8
Output voltage swing
VCC =
5 V
TA = 25
C
3.7
3.9
V
Output voltage swing
VCC =
5 V
TA = full range
3.6
V
VCC =
15 V
TA = 25
C
11.6
12.7
VCC =
15 V
TA = full range
11
VCC = 5 V
TA = 25
C
30
45
VCC = 5 V
TA = full range
25
IO
Output current, RL = 7
VCC =
5 V
TA = 25
C
45
60
mA
IO
Output current, RL = 7
VCC =
5 V
TA = full range
35
mA
VCC =
15 V
TA = 25
C
65
85
VCC =
15 V
TA = full range
50
The full range temperature is 0
C to 70
C for the C suffix, and -40
C to 85
C for the I suffix.
THS4150, THS4151
HIGH SPEED DIFFERENTIAL I/O AMPLIFIERS
SLOS321D - MAY 2000 - REVISED JANUARY 2004
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, VCC =
5 V, RL = 800
, TA = 25
C (unless otherwise noted) (continued)
power supply
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC
Supply voltage range
Single supply
4
5
33
V
VCC
Supply voltage range
Split supply
2
15
16.5
V
VCC =
5 V
TA = 25
C
15.8
18.5
ICC
Quiescent current (per amplifier)
VCC =
5 V
TA = full range
21
mA
ICC
Quiescent current (per amplifier)
VCC =
15 V
TA = 25
C
17.5
21
mA
VCC =
15 V
TA = full range
23
ICC(SD) Quiescent current (shutdown) (THS4150)
TA = 25
C
1
1.3
mA
ICC(SD) Quiescent current (shutdown) (THS4150)
TA = full range
1.5
mA
PSRR
Power supply rejection ratio (dc)
TA = 25
C
70
90
dB
PSRR
Power supply rejection ratio (dc)
TA = full range
65
dB
The full range temperature is 0
C to 70
C for the C suffix, and -40
C to 85
C for the I suffix.
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Small signal frequency response
1, 2
Large signal frequency response
3
Settling time
4
SR
Slew rate
vs Temperature
5
Total harmonic distortion
vs Frequency
6
Total harmonic distortion
vs Output voltage
7
Harmonic distortion
vs Frequency
8-13
Harmonic distortion
vs Output voltage
14-17
Third intermodulation distortion
vs Output voltage
18
Vn
Voltage noise
vs Frequency
19
In
Current noise
vs Frequency
20
VO
Output voltage
vs Single-ended load resistance
21
Power supply current shutdown
vs Supply voltage
22
Output current range
vs Supply voltage
23
VOS
Single-ended output offset voltage
vs Common-mode output voltage
24
CMMR
Common-mode rejection ratio
vs Frequency
25
z
Impedance of the VOCM terminal
vs Frequency
26
zo
Output impedance (powered up)
vs Frequency
27
zo
Output impedance (shutdown)
vs Frequency
28
PSRR
Power supply rejection ratio
vs Frequency
29