THS4271
THS4275
SLOS397E - JULY 2002 - REVISED JANUARY 2004
LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE
FEEDBACK AMPLIFIER
DGK-8
DGN-8
D-8
DRB-8
FEATURES
D
Unity Gain Stability
D
Low Voltage Noise
- 3 nV/
Hz
D
High Slew Rate: 1000 V/
s
D
Low Distortion
- -92 dBc THD at 30 MHz
D
Wide Bandwidth: 1.4 GHz
D
Supply Voltages
- +5 V,
5 V, +12 V, +15 V
D
Power Down Functionality (THS4275)
D
Evaluation Module Available
DESCRIPTION
The THS4271 and THS4275 are low-noise, high slew rate,
unity gain stable voltage feedback amplifiers designed to
run from supply voltages as low as 5 V and as high as 15 V.
The THS4275 offers the same performance as the
THS4271 with the addition of power down capability. The
combination of low-noise, high slew rate, wide bandwidth,
low distortion, and unity gain stability make the THS4271
and THS4275 high performance devices across multiple
ac specifications.
Designers using the THS4271 are rewarded with higher
dynamic range over a wider frequency band without the
stability concerns of decompensated amplifiers. The
devices are available in SOIC, MSOP with PowerPAD
,
and leadless MSOP with PowerPAD
packages.
APPLICATIONS
D
High Linearity ADC Preamplifier
D
Wireless Communication Receivers
D
Differential to Single-Ended Conversion
D
DAC Output Buffer
D
Active Filtering
1
2
3
4
8
7
6
5
NC
IN-
IN+
V
S-
NC
V
S
+
V
OUT
NC
THS4271
RELATED DEVICES
DEVICE
DESCRIPTION
THS4211
1-GHz voltage feedback amplifier
THS4503
Wideband fully differential amplifier
THS3202
Dual, wideband current feedback amplifier
_
+
249
+5 V
49.9
VI
-5 V
50
Source
Low-Noise, Low-Distortion, Wideband Application Circuit
NOTE: Power supply decoupling capacitors not shown
VO
249
50
THS4271
This document contains information on products in more than one phase of
development. The status of each device is indicated on the page(s) specifying its
electrical characteristics.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
www.ti.com
Copyright
2002 - 2004, Texas Instruments Incorporated
PowerPAD is a trademark of Texas Instruments.
-100
-90
-80
-70
-60
-50
-40
1
10
100
Gain = 2
Rf = 249
RL = 150
VO = 2 VPP
VS =
5 V
Harmonic and Intermodulation Distortion - dB
HARMONIC AND INTERMODULATION
DISTORTION
vs
FREQUENCY
f - Frequency - MHz
IMD3
200 kHz Tone Spacing
VO = 2 VPP Envelope
HD3
HD2
THS4271
THS4275
SLOS397E - JULY 2002 - REVISED JANUARY 2004
www.ti.com
2
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
Supply voltage, V
S
16.5 V
Input voltage, V
I
V
S
Output current, I
O
100 mA
Continuous power dissipation See Dissipation Rating Table
Maximum junction temperature, T
J
150
C
Maximum junction temperature, continuous
operation, long term reliability T
J
(2)
125
C
Storage temperature range, T
stg
-65
C to 150
C
Lead temperature
1,6 mm (1/16 inch) from case for 10 seconds
300
C
HBM
3000 V
ESD ratings:
CDM
1500 V
ESD ratings:
MM
1000 V
(1)
The absolute maximum temperature under any condition is
limited by the constraints of the silicon process. Stresses above
these ratings may cause permanent damage. Exposure to
absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The maximum junction temperature for continuous operation is
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
PACKAGE
JC
JA
(1)
POWER RATING(2)
PACKAGE
JC
(
C/W)
JA
(1)
(
C/W)
TA
25
C
TA = 85
C
D (8 pin)
38.3
97.5
1.02 W
410 mW
DGN (8 pin)(3)
4.7
58.4
1.71 W
685 mW
DGK (8 pin)
54.2
260
385 mW
154 mW
DRB (8 pin)(3)
5
45.8
2.18 W
873 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125
C.
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125
C for best performance and
long term reliability.
(3)
The THS4271/5 may incorporate a PowerPAD
on the underside
of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical briefs SLMA002 and SLMA004 for more information
about utilizing the PowerPAD thermally enhanced package.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Supply voltage, (VS+ and VS-)
Dual supply
2.5
7.5
V
Supply voltage, (VS+ and VS-)
Single supply
5
15
V
Input common-mode voltage range
VS- + 1.4
VS+ - 1.4
V
PACKAGING/ORDERING INFORMATION
ORDERABLE PACKAGE AND NUMBER
PLASTIC
SMALL OUTLINE
LEADLESS MSOP 8 (2)
PLASTIC MSOP (1)
PowerPAD
PLASTIC MSOP (1)
SMALL OUTLINE
(D) (1)
(DRB)
(DGN)
PACKAGE
MARKING
(DGK)
PACKAGE
MARKING
THS4271D
THS4271DRBT
THS4271DGN
BFQ
THS4271DGK
BEY
THS4271DR
THS4271DRBR
THS4271DGNR
BFQ
THS4271DGKR
BEY
THS4275D
THS4275DRBT
THS4275DGN
BFR
THS4275DGK
BJD
THS4275DR
THS4275DRBR
THS4275DGNR
BFR
THS4275DGKR
BJD
(1) All packages are available taped and reeled. The R suffix standard quantity is 2500 (e.g., THS4271DGNR).
(2) All packages are available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250 (e.g., THS4271DRBT).
THS4271
THS4275
SLOS397E - JULY 2002 - REVISED JANUARY 2004
www.ti.com
3
PIN ASSIGNMENTS
1
2
3
4
8
7
6
5
NC
IN -
IN +
V
S-
NC
V
S+
V
OUT
NC
THS4271
NC - No internal connection
1
2
3
4
8
7
6
5
REF
IN -
IN +
V
S-
PD
V
S+
V
OUT
NC
THS4275
(TOP VIEW)
D, DRB, DGN, DGK
D, DRB, DGN, DGK
(TOP VIEW)
ELECTRICAL CHARACTERISTICS V
S
=
5 V
RF = 249
, R
L
= 499
, G = +2, unless otherwise noted.
TYP
OVER TEMPERATURE
MIN/
PARAMETER
TEST CONDITIONS
25
C
25
C
0
C TO
70
C
-40
C
TO 85
C
UNITS
MIN/
TYP/
MAX
AC PERFORMANCE
G = 1, VO = 100 mVPP, RL = 150
1.4
GHz
Typ
G = -1, VO = 100 mVPP
400
MHz
Typ
Small signal bandwidth
G = 2, VO = 100 mVPP
390
MHz
Typ
Small signal bandwidth
G = 5, VO = 100 mVPP
85
MHz
Typ
G = 10, VO = 100 mVPP
40
MHz
Typ
0.1 dB flat bandwidth
G = 1, VO = 100 mVPP, RL = 150
200
MHz
Typ
Gain bandwidth product
G > 10, f = 1 MHz
400
MHz
Typ
Full-power bandwidth
G = -1, VO = 2 Vp
80
MHz
Typ
Slew rate
G = 1, VO = 2 V Step
950
V/
s
Typ
Slew rate
G = -1, VO = 2 V Step
1000
V/
s
Typ
Settling time to 0.1%
G = -1, VO = 4 V Step
25
ns
Typ
Settling time to 0.01%
G = -1, VO = 4 V Step
38
ns
Typ
Harmonic distortion
G = 1, VO = 1 VPP, f = 30 MHz
Second harmonic distortion
RL = 150
-92
dBc
Typ
Second harmonic distortion
RL = 499
-80
dBc
Typ
Third harmonic distortion
RL = 150
-95
dBc
Typ
Third harmonic distortion
RL = 499
-95
dBc
Typ
Harmonic distortion
G = 2, VO = 2 VPP, f = 30 MHz
Second harmonic distortion
RL = 150
-65
dBc
Typ
Second harmonic distortion
RL = 499
-70
dBc
Typ
Third harmonic distortion
RL = 150
-80
dBc
Typ
Third harmonic distortion
RL = 499
-90
dBc
Typ
Third order intermodulation (IMD3)
G = 2, VO = 2 VPP, RL = 150
,
f = 70 MHz
-60
dBc
Typ
Third order output intercept (OIP3)
G = 2, VO = 2 VPP, RL = 150
,
f = 70 MHz
35
dBm
Typ
Differential gain (NTSC, PAL)
G = 2, RL = 150
,
0.007%
Typ
Differential phase (NTSC, PAL)
G = 2, RL = 150
,
0.004
_
Typ
Input voltage noise
f = 1 MHz
3
nV/
Hz
Typ
Input current noise
f = 1 MHz
3
pA
Hz
Typ
THS4271
THS4275
SLOS397E - JULY 2002 - REVISED JANUARY 2004
www.ti.com
4
ELECTRICAL CHARACTERISTICS V
S
=
5 V (continued)
RF = 249
, R
L
= 499
, G = +2, unless otherwise noted.
TYP
OVER TEMPERATURE
MIN/
PARAMETER
TEST CONDITIONS
25
C
25
C
0
C to
70
C
-40
C to
85
C
UNITS
MIN/
TYP/
MAX
DC PERFORMANCE
Open-loop voltage gain (AOL)
VO =
50 mV, RL = 499
75
65
60
60
dB
Min
Input offset voltage
VCM = 0 V
5
10
12
12
mV
Max
Average offset voltage drift
VCM = 0 V
10
10
V/
C
Typ
Input bias current
VCM = 0 V
6
15
18
18
A
Max
Average bias current drift
VCM = 0 V
10
10
nA/
C
Typ
Input offset current
VCM = 0 V
1
6
8
8
A
Max
Average offset current drift
VCM = 0 V
10
10
nA/
C
Typ
INPUT CHARACTERISTICS
Common-mode input range
4
3.6
3.5
3.5
V
Min
Common-mode rejection ratio
VCM =
2 V
72
67
65
65
dB
Min
Input resistance
Common-mode
5
M
Typ
Input capacitance
Common-mode / differential
0.4/0.8
pF
Typ
OUTPUT CHARACTERISTIC8
Output voltage swing
G = +2
4
3.8
3.7
3.7
V
Min
Output current (sourcing)
RL = 10
160
120
110
110
mA
Min
Output current (sinking)
RL = 10
80
60
50
50
mA
Min
Output impedance
f = 1 MHz
0.1
Typ
POWER SUPPLY
Specified operating voltage
5
7.5
7.5
7.5
V
Max
Maximum quiescent current
22
24
27
28
mA
Max
Minimum quiescent current
22
20
18
15
mA
Min
Power supply rejection (+PSRR)
VS+ = 5.5 V to 4.5 V, VS- = 5 V
85
75
70
70
dB
Min
Power supply rejection (-PSRR)
VS+ = 5 V,
VS- = -5.5 V to -4.5 V
75
65
60
60
dB
Min
POWER-DOWN CHARACTERISTICS (THS4275 only)
(1)
REF = 0 V,
Enable
REF+1.8
V
Min
Power-down voltage level(1)
REF = 0 V,
or V
S
-
Power down
REF+1
V
Max
Power-down voltage level(1)
REF = V
S
+ or
Enable
REF-1
V
Min
REF = V
S
+ or
Floating
Power down
REF-1.7
V
Max
Power-down quiescent current
PD = Ref +1.0 V, Ref = 0 V
875
1000
1100
1200
A
Max
Power-down quiescent current
PD = Ref -1.7 V, Ref = VS+
650
800
900
1000
A
Max
Turnon time delay(t(ON))
50% of final supply current value
4
s
Typ
Turnoff time delay (t(OFF))
50% of final supply current value
3
s
Typ
Input impedance
f = 1 MHz
4
G
Typ
Output impedance
200
k
Typ
(1) For detail information on the power-down circuit, see the powerdown section in the application information of this data sheet.
THS4271
THS4275
SLOS397E - JULY 2002 - REVISED JANUARY 2004
www.ti.com
5
ELECTRICAL CHARACTERISTICS V
S
= 5 V
RF = 249
, R
L
= 499
, G = +2, unless otherwise noted
TYP
OVER TEMPERATURE
MIN/
PARAMETER
TEST CONDITIONS
25
C
25
C
0
C to
70
C
-40
C to
85
C
UNITS
MIN/
TYP/
MAX
AC PERFORMANCE
G = 1, VO = 100 mVPP, RL = 150
1.2
GHz
Typ
G = -1, VO = 100 mVPP
380
MHz
Typ
Small signal bandwidth
G = 2, VO = 100 mVPP
360
MHz
Typ
Small signal bandwidth
G = 5, VO = 100 mVPP
80
MHz
Typ
G = 10, VO = 100 mVPP
35
MHz
Typ
0.1-dB flat bandwidth
G = 1, VO = 100 mVPP, RL = 150
120
MHz
Typ
Gain bandwidth product
G > 10 , f = 1 MHz
350
MHz
Typ
Full-power bandwidth
G = -1, VO = 2 Vp
60
MHz
Typ
Slew rate
G = 1, VO = 2 V Step
700
V/
s
Typ
Slew rate
G = -1, VO = 2 V Step
750
V/
s
Typ
Settling time to 0.1%
G = -1, VO = 2 V Step
18
ns
Typ
Settling time to 0.01%
G = -1, VO = 2 V Step
66
ns
Typ
Harmonic distortion
G = 1, VO = 1 VPP, f = 30 MHz
Second harmonic distortion
RL = 150
-75
dBc
Typ
Second harmonic distortion
RL = 499
-72
dBc
Typ
Third harmonic distortion
RL = 150
-70
dBc
Typ
Third harmonic distortion
RL = 499
-70
dBc
Typ
Third order intermodulation (IMD3)
G = 2, VO = 1 VPP, RL = 150
,
f = 70 MHz
-65
dBc
Typ
Third order output intercept (OIP3)
G = 2, VO = 1 VPP, RL = 150
,
f = 70 MHz
32
dBm
Typ
Input voltage noise
f = 1 MHz
3
nV/
Hz
Typ
Input current noise
f = 10 MHz
3
pA/
Hz
Typ
DC PERFORMANCE
Open-loop voltage gain (AOL)
VO =
50 mV, RL = 499
68
63
60
60
dB
Min
Input offset voltage
VCM = VS/2
5
10
12
12
mV
Max
Average offset voltage drift
VCM = VS/2
10
10
V/
C
Typ
Input bias current
VCM = VS/2
6
15
18
18
A
Max
Average bias current drift
VCM = VS/2
10
10
nA/
C
Typ
Input offset current
VCM = VS/2
1
6
8
8
A
Max
Average offset current drift
VCM = VS/2
10
10
nA/
C
Typ
INPUT CHARACTERISTICS
Common-mode input range
1/4
1.3/3.7
1.4/3.6
1.5/3.5
V
Min
Common-mode rejection ratio
VCM =
0.5 V, VO = 2.5 V
72
67
65
65
dB
Min
Input resistance
Common-mode
5
M
Typ
Input capacitance
Common-mode / differential
0.4/0.8
pF
Typ
OUTPUT CHARACTERISTICS
Output voltage swing
G = +2
1.2/3.8
1.4/3.6
1.5/3.5
1.5/3.5
V
Min
Output current (sourcing)
RL = 10
120
100
90
90
mA
Min
Output current (sinking)
RL = 10
65
50
40
40
mA
Min
Output impedance
f = 1 MHz
0.1
Typ
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