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FEATURES
APPLICATIONS
DESCRIPTION
75
80
85
90
10
20
30
40
50
dB
f - Frequency - MHz
Combined THS4304 and
ADS5500 SFDR
G = 10 dB,
R
F
= 249
,
R
G
= 115
,
SNR = 69.6,
F
S =
125 MSPS
+ 5V
A IN+
A IN-
ADS 5500
RF
RG
49 .9
V IN
From
50-
source
100
1: 1
RF
RG
CM
CM
0.1
THS 4304
THS 4304
1k
+3.3 VA + 3.3 VD
D
A
0.1
+5V
10 k
V REF (= 2.5V)
VREF
VREF
V REF
1nF
1nF
+ 5V
CM
100
10 k
1k
F
F
THS4304
SLOS436A MARCH 2004 REVISED JULY 2004
Wideband Operational Amplifier
Active Filter
Wide Bandwidth: 3 GHz
ADC Driver
High Slew Rate: 830 V/
s
Ultrasound
Low Voltage Noise: 2.4 nV/
Hz
Gamma Camera
Single Supply: 5 V, 3 V
RF/Telecom
Quiescent Current: 18 mA
The THS4304 is a wideband, voltage-feedback operational amplifier designed for use in high-speed analog
signal-processing chains operating with a single 5-V power supply. Developed in the BiCom3 silicon germanium
process technology, the THS4304 offers best-in-class performance using a single 5-V supply as opposed to
previous generations of operational amplifiers requiring
5-V supplies.
The THS4304 is a traditional voltage-feedback topology that provides the following benefits: balanced inputs, low
offset voltage and offset current, low offset drift, high common mode and power supply rejection ratio.
The THS4304 is offered in 8-pin MSOP package (DGK), the 8-pin SOIC package (D), and the space-saving 5-pin
SOT-23 package (DBV).
DIFFERENTIAL ADC DRIVE
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright 2004, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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1
2
3
4
5
8
7
6
1
2
3
5
4
V
OUT
V
S
-
IN+
V
S
+
IN-
IN+
IN-
NC
V
S
-
NC
V
S
+
V
OUT
TOP VIEW
TOP VIEW
DBV
D and DGK
NOTE: NC indicates there is no internal connection to these pins.
V
OUT
DISSIPATION RATINGS
THS4304
SLOS436A MARCH 2004 REVISED JULY 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
PINOUT DRAWING
PACKAGING / ORDERING INFORMATION
TRANSPORT MEDIA,
PACKAGED DEVICES
PACKAGE TYPE
PACKAGE MARKINGS
QUANTITY
THS4304DBVT
Tape and Reel, 250
SOT-23-5
AKW
THS4304DBVR
Tape and Reel, 3000
THS4304D
Rails, 75
SOIC-8
--
THS4304DR
Tape and Reel, 2500
THS4304DGK
Rails, 100
MSOP-8
AKU
THS4304DGKR
Tape and Reel, 2500
POWER RATING
(2)
JC
JA
PACKAGE
(
C/W)
(
C/W)
(1)
T
A
25
C
T
A
= 85
C
DBV (5)
55
255.4
391 mW
156 mW
D (8)
38.3
97.5
1.02 W
410 mW
DGK (8)
71.5
180.8
553 mW
221 mW
(1)
This data was taken using the JEDEC standard High-K test PCB.
(2)
Power rating determined with a junction temperature of 125
C. This is the point where distortion starts to substantially increase. Thermal
management of the final PCB should strive to keep the junction temperature at or below 125
C for best performance and long-term
reliability.
2
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ABSOLUTE MAXIMUM RATINGS
(1)
RECOMMENDED OPERATING CONDITIONS
THS4304
SLOS436A MARCH 2004 REVISED JULY 2004
over operating free-air temperature range (unless otherwise noted)
UNIT
V
S
Supply voltage
+6.0 V
V
I
Input voltage
V
S
I
O
Output current
150 mA
V
ID
Differential input voltage
2 V
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature, any condition
(2)
150
C
T
J
Operating free-air temperature range, continuous operation, long-term reliability
(2)
125
C
T
stg
Storage temperature range
65
C to 150
C
Lead temperature: 1,6 mm (1/16 inch) from case for 10 seconds
300
C
HBM
1600 V
ESD Ratings
CDM
1000 V
MM
100 V
(1)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Dual supply
1.35
2.5
Supply voltage, (V
S+
and V
S
)
V
Single supply
2.7
5
Input common-mode voltage range
V
S
0.2
V
S+
+ 0.2
V
3
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ELECTRICAL CHARACTERISTICS
THS4304
SLOS436A MARCH 2004 REVISED JULY 2004
Specifications: V
S
= 5 V: R
F
= 249
, R
L
= 100
, and G = +2 unless otherwise noted
TYP
OVER TEMPERATURE
TEST
PARAMETER
CONDITIONS
0
C to
40
C to
MIN/
LEVEL
(1)
25
C
25
C
UNITS
70
C
85
C
MAX
AC PERFORMANCE
G = +1, V
O
= 100 mVpp
3
GHz
Typ
C
G = +2, V
O
= 100 mVpp
1
GHz
Typ
C
Small-Signal Bandwidth
G = +5, V
O
= 100 mVpp
187
MHz
Typ
C
G = +10, V
O
= 100 mVpp
87
MHz
Typ
C
Gain Bandwidth Product
G >+10
870
MHz
Typ
C
0.1-dB Flat Bandwidth
G= +2, V
O
= 100 mVpp,
300
MHz
Typ
C
C
F
= 0.5 pF
Large-Signal Bandwidth
G = +2, V
O
= 2 V
PP
240
MHz
Typ
C
G = +2, V
O
= 1-V Step
830
V/
s
Typ
C
Slew Rate
G = +2, V
O
= 2-V Step
790
V/
s
Typ
C
Settling Time to 1%
G = 2, V
O
= 2-V Step
4.5
ns
Typ
C
Settling Time to 0.1%
G = 2, V
O
= 2-V Step
7.5
ns
Typ
C
Settling Time to 0.01%
G = 2, V
O
= 2-V Step
35
ns
Typ
C
Rise / Fall Times
G = +2, V
O
= 2-V Step
2.5
ns
Typ
C
Harmonic Distortion
R
L
= 100
84
dBc
Typ
C
Second Harmonic Distortion
G = +2,
R
L
= 1 k
95
dBc
Typ
C
V
O
= 2 V
PP
,
R
L
= 100
100
dBc
Typ
C
f = 10 MHz
Third Harmonic Distortion
R
L
= 1 k
100
dBc
Typ
C
Third-Order Intermodulation
84
dBc
Typ
C
G = +2, V
O
= 2-V
PP
envelope,
Distortion (IMD
3
)
200-kHz tone spacing,
Third-Order Output Intercept
f = 20 MHz
48
dBm
Typ
C
(OIP
3
)
Noise Figure
G = +2, f = 1 GHz
15
dB
Typ
C
Input Voltage Noise
f = 1 MHz
2.4
nV/
Hz
Typ
C
Input Current Noise
f = 1 MHz
2.1
pA/
Hz
Typ
C
DC PERFORMANCE
Open-Loop Voltage Gain
V
O
=
0.8 V, V
CM
= 2.5 V
65
54
50
50
dB
Min
A
(A
OL
)
Input Offset Voltage
0.5
4
5
5
mV
Max
A
Input Offset Voltage Drift
5
5
V/
C
Typ
B
Input Bias Current
7
12
18
18
A
Max
A
V
CM
= 2.5 V
Input Bias Current Drift
50
50
nA/
C
Typ
B
Input Offset Current
0.5
1
1.2
1.2
A
Max
A
Input Offset Current Drift
10
10
nA/
C
Typ
B
INPUT CHARACTERISTICS
Common-Mode Input Range
0.2 to
0.2 to
0.4 to
0.4 to
V
Min
A
5.2
4.8
4.6
4.6
Common-Mode Rejection
V
O
=
0.2 V, V
CM
= 2.5 V
95
80
73
73
dB
Min
A
Ratio
Input Resistance
100
k
Typ
C
Each input, referenced to GND
Input Capacitance
1.5
pF
Typ
C
(1)
Test levels: (A) 100% tested at 25
C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
4
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THS4304
SLOS436A MARCH 2004 REVISED JULY 2004
ELECTRICAL CHARACTERISTICS (continued)
Specifications: V
S
= 5 V: R
F
= 249
, R
L
= 100
, and G = +2 unless otherwise noted
TYP
OVER TEMPERATURE
TEST
PARAMETER
CONDITIONS
0
C to
40
C to
MIN/
LEVEL
(1)
25
C
25
C
UNITS
70
C
85
C
MAX
OUTPUT CHARACTERISTICS
1.1 to
1.2 to
1.3 to
1.3 to
R
L
= 100
3.9
3.8
3.7
3.7
Output Voltage Swing
V
Min
A
1 to 4
1.1 to
1.2 to
1.2 to
R
L
= 1 k
3.9
3.8
3.8
Output Current (Sourcing)
R
L
= 10
140
100
57
57
mA
Min
A
Output Current (Sinking)
R
L
= 10
92
65
40
40
mA
Min
A
Output Impedance
f = 100 kHz
0.016
Typ
A
POWER SUPPLY
Maximum Operating Voltage
5
5.5
5.5
5.5
Max
V
A
Minimum Operating Voltage
5
2.7
2.7
2.7
Min
Maximum Quiescent Current
18
18.9
19.4
19.4
mA
Max
A
Minimum Quiescent Current
18
17.5
16.6
16.6
mA
Min
A
Power Supply Rejection
V
S+
= 5.5 V to 4.5 V, V
S
= 0 V
80
73
66
66
dB
Min
A
(+PSRR)
Power Supply Rejection
V
S+
= 5 V, V
S
= 0.5 V to +0.5
60
57
54
54
dB
Min
A
(-PSRR)
V
5
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